Silicon Dioxide with a Silicon Interfacial Layer as an Insulating Gate For Highly Stable Indium Phosphide Metal‐Insulator‐Semiconductor Field Effect Transistors

M. Shokrani; V. J. Kapoor

doi:10.1149/1.2085874

Silicon Dioxide with a Silicon Interfacial Layer as an Insulating Gate For Highly Stable Indium Phosphide Metal‐Insulator‐Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.2085874 ◽

1991 ◽

Vol 138 (6) ◽

pp. 1788-1794 ◽

Cited By ~ 10

Author(s):

M. Shokrani ◽

V. J. Kapoor

Keyword(s):

Indium Phosphide ◽

Silicon Dioxide ◽

Interfacial Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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ChemInform Abstract: Silicon Dioxide with a Silicon Interfacial Layer as an Insulating Gate for Highly Stable Indium Phosphide Metal-Insulator-Semiconductor Field Effect Transistors

ChemInform ◽

10.1002/chin.199134272 ◽

2010 ◽

Vol 22 (34) ◽

pp. no-no

Author(s):

M. SHOKRANI ◽

V. J. KAPOOR

Keyword(s):

Indium Phosphide ◽

Silicon Dioxide ◽

Interfacial Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Plasma‐deposited germanium nitride gate insulators for indium phosphide metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.348508 ◽

1991 ◽

Vol 69 (6) ◽

pp. 3616-3622 ◽

Cited By ~ 14

Author(s):

Gregory A. Johnson ◽

Vik J. Kapoor

Keyword(s):

Indium Phosphide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Gate Insulators

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Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3528334 ◽

2010 ◽

Vol 97 (25) ◽

pp. 253502 ◽

Cited By ~ 16

Author(s):

Yuji Urabe ◽

Masafumi Yokoyama ◽

Hideki Takagi ◽

Tetsuji Yasuda ◽

Noriyuki Miyata ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Cited By ~ 21

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors: Drift in InP metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.334431 ◽

1985 ◽

Vol 57 (6) ◽

pp. 1956-1960 ◽

Cited By ~ 45

Author(s):

J. A. Van Vechten ◽

J. F. Wager

Keyword(s):

Field Effect ◽

Nearest Neighbor ◽

Field Effect Transistors ◽

Compound Semiconductors ◽

Anion Vacancy ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors

Biosensors and Biodetection - Methods in Molecular Biology ◽

10.1007/978-1-4939-6911-1_15 ◽

2017 ◽

pp. 217-232 ◽

Cited By ~ 3

Author(s):

Jiangwei Liu ◽

Yasuo Koide

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

Journal of Materials Chemistry C ◽

10.1039/c9tc02468a ◽

2019 ◽

Vol 7 (29) ◽

pp. 8855-8860 ◽

Cited By ~ 3

Author(s):

Janghyuk Kim ◽

Marko J. Tadjer ◽

Michael A. Mastro ◽

Jihyun Kim

Keyword(s):

Plasma Treatment ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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A model for nonvolatile p-channel metal–ferroelectric–metal–insulator–semiconductor field-effect transistors (MFMIS FETs)

Journal of Computational Electronics ◽

10.1007/s10825-019-01320-8 ◽

2019 ◽

Vol 18 (2) ◽

pp. 527-533

Author(s):

Jing Sun ◽

Yanping Li ◽

Lei Cao

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Performance of Germanium Metal-Insulator-Semiconductor Field Effect Transistors with Nickel Germanide Source/Drain

ECS Meeting Abstracts ◽

10.1149/ma2008-01/16/669 ◽

2008 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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N-channel, p-channel, depletion, enhancement GaAs metal-insulator semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surfaces

International Conference on Indium Phosphide and Related Materials, 2005. ◽

10.1109/iciprm.2005.1517469 ◽

2005 ◽

Author(s):

N.C. Paul ◽

M. Takebe ◽

M. Tametou ◽

H. Seto ◽

Y. Fujino ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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