Investigation on Leakage Current Reduction of Photo‐CVD Tantalum Oxide Films Accomplished by Active Oxygen Annealing

1992 ◽  
Vol 139 (1) ◽  
pp. 320-328 ◽  
Author(s):  
S. Tanimoto ◽  
M. Matsui ◽  
K. Kamisako ◽  
K. Kuroiwa ◽  
Y. Tarui
Keyword(s):  
Leakage Current ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Active Oxygen ◽  
Oxygen Annealing ◽  
Current Reduction

Tantalum Oxide Films Formed by UV Photo-CVD Using Oxygen and Ozone and Its Photo-Chemical Leakage Current Reduction Mechanism

1990 ◽  
Author(s):  
Satoshi TANIMOTO ◽  
Masahiro MATSUI ◽  
Minoru AOYAGI ◽  
Koichi KAMISAKO ◽  
Koichi KUROIWA ◽  
...  
Keyword(s):  
Leakage Current ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Reduction Mechanism ◽  
Current Reduction

Various Methods to Reduce Defect States in Tantalum Oxide Capacitors for DRAM Applications

2005 ◽  
Vol 864 ◽  
Author(s):  
W.S. Lau ◽  
G. Zhang ◽  
L.L. Leong ◽  
P.W. Qian ◽  
Taejoon Han ◽  
...  
Keyword(s):  
Leakage Current ◽  
Tantalum Oxide ◽  
Random Access ◽  
Defect States ◽  
Access Memory ◽  
Key Points ◽  
Type Semiconductor ◽  
O Vacancy ◽  
High Dielectric ◽  
Current Reduction

AbstractTantalum oxide has attracted world-wide interest for DRAM (dynamic random access memory) capacitor applications because of its relative high dielectric constant compared to silicon dioxide or nitride. We would like to point out that tantalum oxide behaves very much like a large bandgap n-type semiconductor with 3 main types of donors responsible for leakage current. Native oxygen vacancies are very deep double donors with Ec – Ed = 0.8 eV approximately, where Ec is the bottom of the conduction band and Ed is the energy leVel of the defect state. Si-O vacancy complexes are relatively shallow single donors with Ec – Ed = 0.2-0.4 eV. C-O vacancy complexes are relatively shallow single donors with Ec – Ed = 0.5-0.6 eV. The key points regarding how to suppress these 3 types of donor defects will be discussed for the purpose of leakage current reduction.

Mechanism of leakage current reduction of tantalum oxide capacitors by postmetallization annealing

2006 ◽  
Vol 89 (26) ◽  
pp. 262901 ◽  
Author(s):  
W. S. Lau ◽  
K. K. Khaw ◽  
Taejoon Han ◽  
Nathan P. Sandler
Keyword(s):  
Leakage Current ◽  
Tantalum Oxide ◽  
Current Reduction

Electrical Properties of Tantalum Based Composite Oxide Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Hannu Kattelus ◽  
Markku Ylilammi ◽  
Jorma Salmi ◽  
Timo Ranta-Aho ◽  
Erjany Kanen ◽  
...  
Keyword(s):  
Leakage Current ◽  
Hafnium Oxide ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layered Composite ◽  
Atomic Layer Epitaxy ◽  
Oxygen Species ◽  
Composite Oxide ◽  
New Class

ABSTRACTTantalum oxide is a widely used insulator in electronic applications requiring high permittivity. When deposited at low temperature, tantalum oxide films, however, often exhibit large leakage current. A common way to reduce leakage is to anneal the films in an ambient containing extremely reactive oxygen species, or at high temperature in dry oxygen. A different approach is to use composite oxide materials. We have studied layered tantalum based oxide films deposited by Atomic Layer Epitaxy, and observed that the leakage current is decreased by several orders of magnitude when a fraction of tantalum oxide is replaced by another oxide, such as aluminum or hafnium oxide. Leakage current density of 40 nA/cm2 in the electric field of 1 MV/cm is attained for unannealed Ta-Hf-O film deposited at 300°C. Layered composite insulators are an interesting new class of materials, and ALE proves to be a useful method for depositing them.

Mechanism of leakage current reduction of tantalum oxide capacitors by titanium doping

2007 ◽  
Vol 90 (11) ◽  
pp. 112903 ◽  
Author(s):  
W. S. Lau ◽  
T. S. Tan ◽  
Premila Babu ◽  
Nathan P. Sandler
Keyword(s):  
Leakage Current ◽  
Tantalum Oxide ◽  
Titanium Doping ◽  
Current Reduction

Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method

2018 ◽  
Vol 28 (8) ◽  
pp. 440-444
Author(s):  
Kwang-Jin Lee ◽  
◽  
Doyeon Kim ◽  
Duck-Kyun Choi ◽  
Woo-Byoung Kim
Keyword(s):  
Leakage Current ◽  
Chemical Cleaning ◽  
Cleaning Method ◽  
Current Reduction

Organic synaptic devices based on ionic gel with reduced leakage current

2021 ◽  
Vol 57 (15) ◽  
pp. 1907-1910
Author(s):  
Dapeng Liu ◽  
Yiwei Zhao ◽  
Qianqian Shi ◽  
Shilei Dai ◽  
Li Tian ◽  
...  
Keyword(s):  
Solid State ◽  
Leakage Current ◽  
Dielectric Film ◽  
Neuromorphic Computing ◽  
Computing Systems ◽  
Current Reduction

A solid-state hybrid electrolyte dielectric film was designed for leakage current reduction, synaptic simulation and neuromorphic computing systems.

A Single-Phase Five-Level Transformer-Less PV Inverter for Leakage Current Reduction

2021 ◽  
pp. 1-1
Author(s):  
Xiaonan Zhu ◽  
Hongliang Wang ◽  
Wenyuan Zhang ◽  
Hanzhe Wang ◽  
Xiaojun Deng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Single Phase ◽  
Pv Inverter ◽  
Current Reduction
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