Characterization of Thin SiO2 Grown by Rapid Thermal Processing as Influenced by Processing Parameters

1993 ◽  
Vol 140 (3) ◽  
pp. 787-789 ◽  
Author(s):  
G. Eftekhari
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing Parameters

Characterization of PSG Films Reflowed in Steam Using Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
N. Shah ◽  
J. M. C. Vittie ◽  
N. Sharif ◽  
J. Nulman ◽  
A. Gat
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Operating Regime ◽  
Junction Depth ◽  
Thermal Oxide ◽  
Rapid Thermal Annealer ◽  
Flow Cycle ◽  
Phosphosilicate Glass

ABSTRACTThis study describes the use of a steam environment to reflow phosphosilicate glass (PSG) samples using a HEATPULSE® rapid thermal annealer. The samples comprised PSG over poly steps and of open contacts in PSG. It was observed that reflow occurs 50°C lower in steam than in dry O2. An acceptable flow cycle for 8 w/o P in PSG glass is 1050°C for 10 seconds in steam, while for 6 w/o P PSG it is 1100°C for 10 seconds. Steam is found to be an effective amibient for densification of the PSG film. The thermal oxide grown in the contact during opening reflow was determined to be near 140 A. The operating regime for a junction depth <0.4 um and a reflow angle < 75° is presented for 8 w/o P.

Preparation of CIGSS Thin-Film Solar Cells by Rapid Thermal Processing

2006 ◽  
Vol 129 (3) ◽  
pp. 323-326
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
X Ray

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3min long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1−xGaxSe2−ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. A RTP reactor for preparation of CIGSS thin films on 10cm×10cm substrates has been designed, assembled, and tested at the Florida Solar Energy Center’s PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by the RTP technique. Materials characterization of these films was done by scanning electron microscopy, x-ray energy dispersive spectroscopy, x-ray diffraction, Auger electron spectroscopy, electron probe microanalysis, and electrical characterization was done by current–voltage measurements on soda lime glass substrates by the RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets, and without using toxic gases.

Photoluminescence characterization of polycrystalline CuGaSe2 thin films grown by rapid thermal processing

1998 ◽  
Vol 51 (3-4) ◽  
pp. 371-384 ◽  
Author(s):  
J.H. Schön ◽  
O. Schenker ◽  
L.L. Kulyuk ◽  
K. Friemelt ◽  
E. Bucher
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Characterization of kesterite thin films fabricated by rapid thermal processing of stacked elemental layers using spatially resolved cathodoluminescence

2015 ◽  
Vol 582 ◽  
pp. 387-391 ◽  
Author(s):  
Ulrike Künecke ◽  
Christina Hetzner ◽  
Stefan Möckel ◽  
Hyesun Yoo ◽  
Rainer Hock ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Spatially Resolved

Characterization of Si(111) crystals implanted with Sb+ ions and annealed by rapid thermal processing

2003 ◽  
Vol 102 (1-3) ◽  
pp. 390-397 ◽  
Author(s):  
R. Labbani ◽  
R. Halimi ◽  
T. Laoui ◽  
A. Vantomme ◽  
B. Pipeleers ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing

Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing

2013 ◽  
Vol 365 ◽  
pp. 29-34 ◽  
Author(s):  
Robert Chen ◽  
Yi-Chiau Huang ◽  
Suyog Gupta ◽  
Angie C. Lin ◽  
Errol Sanchez ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Material Characterization ◽  
Rapid Thermal Processing ◽  
Epitaxial Films

The Effect of Multilayer Patterns on Thermal Stress During Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
Jeffrey P. Hebbi ◽  
Klavs F. Jensen
Keyword(s):  
Plastic Deformation ◽  
Thermal Stress ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing Parameters ◽  
Radiative Properties ◽  
Stress Fields ◽  
Transport Models ◽  
Patterned Wafers ◽  
Side Illumination

AbstractMultilayer patterns can lead to temperature non-uniformity and undesirable levels of thermal stress in silicon wafers during rapid thermal processing (RTP). Thermal stress can, in turn, cause problems such as photolithography overlay errors and degraded device performance through plastic deformation. In this work, the temperature and stress fields in patterned wafers are simulated using detailed finite-element based reactor transport models coupled with electromagnetic theory for predicting radiative properties of multilayers. The temperature distributions are then used to predict the stress fields in the wafer and the onset of plastic deformation. Results are presented for two generic two-dimensional axi-symmetric reactors employing single and double side illumination. The effect of patterns and processing parameters are explored, and strategies for avoiding pattern induced plastic deformation are evaluated.

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