Wafer Temperature Dependence of the Vapor‐Phase  HF  Oxide Etch

1993 ◽  
Vol 140 (1) ◽  
pp. 205-208 ◽  
Author(s):  
Man Wong ◽  
Mehrdad M. Moslehi ◽  
Robert A. Bowling
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Wafer Temperature

Vapor-Phase Spectra and the Pressure-Temperature Dependence of Long-Chain Carboxylic Acids Studied by a CO Laser and the Photoacoustic Heat-Pipe Detector

1995 ◽  
Vol 49 (7) ◽  
pp. 994-999 ◽  
Author(s):  
Henk Jalink ◽  
Dane Bicanic ◽  
Mladen Franko ◽  
Zoltán Bozóki
Keyword(s):  
Temperature Dependence ◽  
Heat Pipe ◽  
Vapor Phase ◽  
Saturated Fatty Acids ◽  
Capric Acid ◽  
Spectral Studies ◽  
Clapeyron Equation ◽  
Co Laser ◽  
Phase Spectra ◽  
Long Chain

A resonant photoacoustic heat-pipe (PAHP) cell was constructed and used for spectral studies of four long-chain saturated fatty acids (C10:0 to C16:0) at CO laser wavelengths and temperatures above that of the ambient. Vapor-phase absorption spectra were recorded at temperatures of 383 K for capric acid C10H20O2, 400 K for lauric acid C12H24O2, 438 K for myristic acid C14H28O2, and 445.5 K for palmitic acid C16H32O2, respectively. In addition, the temperature dependence (298 to 393 K) of vapor pressure was determined for C10:0; measurable PA signals were obtained at a temperature only a few degrees above the melting point for this acid. The data observed for C10:0 could be linearly fitted from as low as 323 K, indicating the validity of the Clausius-Clapeyron equation for temperatures lower than the 398 K < T < 541.4 K range anticipated so far.

scholarly journals Growth Temperature Dependence of Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy

2010 ◽  
Vol 59 (9) ◽  
pp. 671-674
Author(s):  
Atsushi NISHIKAWA ◽  
Takashi KAWASAKI ◽  
Naoki FURUKAWA ◽  
Yoshikazu TERAI ◽  
Yasufumi FUJIWARA
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Temperature Dependence

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2022-2024 ◽  
Author(s):  
Yoshinao Kumagai ◽  
Hirokazu Adachi ◽  
Aya Otake ◽  
Yoshihiro Higashikawa ◽  
Rie Togashi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates

Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

2002 ◽  
Vol 91 (8) ◽  
pp. 5045-5050 ◽  
Author(s):  
A. M. Ardila ◽  
O. Martínez ◽  
M. Avella ◽  
J. Jiménez ◽  
B. Gérard ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Raman Shift

Temperature Dependence of ZnS Growth with Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy Using Ditertiarybutyl Sulfide

1995 ◽  
Vol 34 (Part 1, No. 8A) ◽  
pp. 4143-4147 ◽  
Author(s):  
Toshio Obinata ◽  
Katsuhiro Uesugi ◽  
Go Sato ◽  
Ikuo Suemune ◽  
Hideaki Machida ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Temperature dependence of Raman scattering of ZnSe nanoparticle grown through vapor phase

2005 ◽  
Vol 274 (3-4) ◽  
pp. 530-535 ◽  
Author(s):  
Guowei Lu ◽  
Huizi An ◽  
Yu Chen ◽  
Jiehui Huang ◽  
Hongzhou Zhang ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Vapor Phase
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