Formation and decay of molecular exciplexes in the vapor phase: excitation energy, isotope, and temperature dependence of rate processes in the tetracyanobenzene/p-xylene system

1982 ◽  
Vol 86 (21) ◽  
pp. 4120-4130 ◽  
Author(s):  
S. Okajima ◽  
E. C. Lim
Keyword(s):  
Excitation Energy ◽  
Temperature Dependence ◽  
Vapor Phase ◽  
Rate Processes

Vapor-Phase Spectra and the Pressure-Temperature Dependence of Long-Chain Carboxylic Acids Studied by a CO Laser and the Photoacoustic Heat-Pipe Detector

1995 ◽  
Vol 49 (7) ◽  
pp. 994-999 ◽  
Author(s):  
Henk Jalink ◽  
Dane Bicanic ◽  
Mladen Franko ◽  
Zoltán Bozóki
Keyword(s):  
Temperature Dependence ◽  
Heat Pipe ◽  
Vapor Phase ◽  
Saturated Fatty Acids ◽  
Capric Acid ◽  
Spectral Studies ◽  
Clapeyron Equation ◽  
Co Laser ◽  
Phase Spectra ◽  
Long Chain

A resonant photoacoustic heat-pipe (PAHP) cell was constructed and used for spectral studies of four long-chain saturated fatty acids (C10:0 to C16:0) at CO laser wavelengths and temperatures above that of the ambient. Vapor-phase absorption spectra were recorded at temperatures of 383 K for capric acid C10H20O2, 400 K for lauric acid C12H24O2, 438 K for myristic acid C14H28O2, and 445.5 K for palmitic acid C16H32O2, respectively. In addition, the temperature dependence (298 to 393 K) of vapor pressure was determined for C10:0; measurable PA signals were obtained at a temperature only a few degrees above the melting point for this acid. The data observed for C10:0 could be linearly fitted from as low as 323 K, indicating the validity of the Clausius-Clapeyron equation for temperatures lower than the 398 K < T < 541.4 K range anticipated so far.

scholarly journals Growth Temperature Dependence of Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy

2010 ◽  
Vol 59 (9) ◽  
pp. 671-674
Author(s):  
Atsushi NISHIKAWA ◽  
Takashi KAWASAKI ◽  
Naoki FURUKAWA ◽  
Yoshikazu TERAI ◽  
Yasufumi FUJIWARA
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Temperature Dependence

Wafer Temperature Dependence of the Vapor‐Phase  HF  Oxide Etch

1993 ◽  
Vol 140 (1) ◽  
pp. 205-208 ◽  
Author(s):  
Man Wong ◽  
Mehrdad M. Moslehi ◽  
Robert A. Bowling
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Wafer Temperature

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2022-2024 ◽  
Author(s):  
Yoshinao Kumagai ◽  
Hirokazu Adachi ◽  
Aya Otake ◽  
Yoshihiro Higashikawa ◽  
Rie Togashi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates

Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

2002 ◽  
Vol 91 (8) ◽  
pp. 5045-5050 ◽  
Author(s):  
A. M. Ardila ◽  
O. Martínez ◽  
M. Avella ◽  
J. Jiménez ◽  
B. Gérard ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Raman Shift

Temperature Dependence of ZnS Growth with Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy Using Ditertiarybutyl Sulfide

1995 ◽  
Vol 34 (Part 1, No. 8A) ◽  
pp. 4143-4147 ◽  
Author(s):  
Toshio Obinata ◽  
Katsuhiro Uesugi ◽  
Go Sato ◽  
Ikuo Suemune ◽  
Hideaki Machida ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

The wavelength- and temperature-dependence of the fluorescence efficiency and of the primary photochemical yield in hexafluoroacetone vapour

1959 ◽  
Vol 250 (1262) ◽  
pp. 287-300 ◽  
Keyword(s):  
Excitation Energy ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Wavelength Dependence ◽  
Fluorescence Yield ◽  
A Value ◽  
Fluorescence Efficiency ◽  
Vibrational Levels ◽  
Photochemical Yield ◽  
The One

The measurement of the fluorescence and photochemical yields of hexafluoroacetone previously made at 3130 Å and at room temperature is extended to various other wavelengths and temperatures. Relative fluorescence yields at room temperature increase with decrease of excitation energy. This wavelength dependence is smaller at higher concentrations. The yields increase with concentration eventually converging almost to a single value. On the other hand, the photochemical yields measured show the opposite trends with respect to variations in concentration and excitation energy. As concentration increases they also converge to a value almost identical with that at 3130 Å. The temperature effect on the fluorescence yield is also opposite to the one on the photolysis at 3130 Å. The fluorescence decreases with increase in temperature, the variation being much bigger at higher concentrations. The intensity distribution of the fluorescence band is independent of temperature. It seems difficult to interpret the observed temperature dependence for fluorescence quenching and for dissociation at infinite concentration on the basis of a single excited state. Two modes of dissociation are postulated arising respectively from low and from high vibrational levels of different electronic states.

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