Synthetic Diamond Electrodes: Photoelectrochemical Investigation of Undoped and Boron‐Doped Polycrystalline Thin Films

1995 ◽  
Vol 142 (8) ◽  
pp. 2704-2709 ◽  
Author(s):  
A. Ya. Sakharova ◽  
Yu. V. Pleskov ◽  
F. Di Quarto ◽  
S. Piazza ◽  
C. Sunseri ◽  
...  
Nanoscale ◽  
2015 ◽  
Vol 7 (2) ◽  
pp. 551-558 ◽  
Author(s):  
K. Siuzdak ◽  
R. Bogdanowicz ◽  
M. Sawczak ◽  
M. Sobaszek

We report on novel composite nanostructures based on boron-doped diamond thin films grown on top of TiO2 nanotubes.


Author(s):  
D J H Cockayne ◽  
D R McKenzie

The study of amorphous and polycrystalline materials by obtaining radial density functions G(r) from X-ray or neutron diffraction patterns is a well-developed technique. We have developed a method for carrying out the same technique using electron diffraction in a standard TEM. It has the advantage that studies can be made of thin films, and on regions of specimen too small for X-ray and neutron studies. As well, it can be used to obtain nearest neighbour distances and coordination numbers from the same region of specimen from which HREM, EDS and EELS data is obtained.The reduction of the scattered intensity I(s) (s = 2sinθ/λ ) to the radial density function, G(r), assumes single and elastic scattering. For good resolution in r, data must be collected to high s. Previous work in this field includes pioneering experiments by Grigson and by Graczyk and Moss. In our work, the electron diffraction pattern from an amorphous or polycrystalline thin film is scanned across the entrance aperture to a PEELS fitted to a conventional TEM, using a ramp applied to the post specimen scan coils. The elastically scattered intensity I(s) is obtained by selecting the elastically scattered electrons with the PEELS, and collecting directly into the MCA. Figure 1 shows examples of I(s) collected from two thin ZrN films, one polycrystalline and one amorphous, prepared by evaporation while under nitrogen ion bombardment.


1997 ◽  
Vol 296 (1-2) ◽  
pp. 114-117 ◽  
Author(s):  
O. Pesty ◽  
P. Canet ◽  
F. Lalande ◽  
H. Carchano ◽  
D. Lollman

2006 ◽  
Vol 53 (4) ◽  
pp. 839-844 ◽  
Author(s):  
Chia-Chin Changa ◽  
Li-Chia Chena ◽  
Shyh-Jiun Liu ◽  
Hsien-Ju Tien ◽  
Hsien-Chang Chang

2021 ◽  
Vol 23 (3) ◽  
pp. 2368-2376
Author(s):  
A. Di Trolio ◽  
A. Amore Bonapasta ◽  
C. Barone ◽  
A. Leo ◽  
G. Carapella ◽  
...  

Co doping increases the ZnO resistivity (ρ) at high T (HT), whereas it has an opposite effect at low T (LT). H balances the Co effects by neutralizing the ρ increase at HT and strengthening its decrease at LT.


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