Chemical Vapor Deposition of Epitaxial Silicon‐Germanium from Silane and Germane: II . In Situ Boron, Arsenic, and Phosphorus Doping

1995 ◽  
Vol 142 (10) ◽  
pp. 3520-3527 ◽  
Author(s):  
Syun‐Ming Jang ◽  
Kenneth Liao ◽  
Rafael Reif
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Chemical Vapor ◽  
Epitaxial Silicon ◽  
Phosphorus Doping

Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon-Germanium Films on SiO2 and Their Properties

1995 ◽  
Vol 403 ◽  
Author(s):  
V. Z-Q Li ◽  
M. R. Mirabedini ◽  
R. T. Kuehn ◽  
D. Gladden ◽  
D. Batchelor ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Grain Structure ◽  
Germanium Content ◽  
Thermal Chemical Vapor Deposition ◽  
Nucleation Sites

AbstractIn this work, polycrystalline SiGe has been viewed as an alternative gate material to polysilicon in single wafer processing for the deep submicrometer VLSI applications. We studied deposition of the silicon-germanium (SiGe) films with different germanium concentrations (up to 85%) on SiO2 in a rapid thermal chemical vapor deposition reactor using GeH4 and SiH4/H2 gas mixture with the temperature ranging from 550°C to 625°C. Since the SiGe RTCVD process is selective toward oxide and does not form nucleation sites on the oxide easily, an in-situ polysilicon flash technique is used to provide the necessary nucleation sites for the deposition of SiGe films with high germanium content. It was observed that with the in-situ polysilicon flash as a pre-nucleation seed, the SiGe deposited on SiO2 forms a continuous polycrystalline layer. Polycrystalline SiGe films of about 2000Å in thickness have a columnar grain structure with a grain size of approximately 1000Å. Compositional analyses from Auger Electron Spectroscopy (AES) and Rutherford backscattering (RBS) show that the high germanium incorporation in the SiGe films has a weak dependence on the deposition temperature. It is also noted that the germanium content across the film thickness is fairly constant which is a critical factor for the application of SiGe films as the gate material. Lastly, we found that the surface morphology of SiGe films become smoother at lower deposition temperature.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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