Selective Epitaxial Growth of Silicon by the A.C. Technique: II . Ion‐Implanted Substrate/Oxide Surfaces

1995 ◽  
Vol 142 (7) ◽  
pp. 2450-2455
Author(s):  
Q. S. Wang ◽  
A. Reisman ◽  
D. Temple ◽  
R. Alberti
Keyword(s):  
Epitaxial Growth ◽  
Oxide Surfaces ◽  
Selective Epitaxial Growth ◽  
Ion Implanted

Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions with Ni salicide contacts

2004 ◽  
Vol 810 ◽  
Author(s):  
Christian Isheden ◽  
Per-Erik Hellström ◽  
Henry H. Radamson ◽  
Mikael Östling
Keyword(s):  
Epitaxial Growth ◽  
Silicon Substrate ◽  
Solid Solubility ◽  
Process Flow ◽  
Dopant Activation ◽  
Selective Epitaxial Growth ◽  
Ion Implanted

ABSTRACTIntegration issues concerning recessed epitaxial SiGe(B) source/drain junctions formed by selective Si etching followed by selective epitaxial growth of in situ heavily B-doped Si1−xGex are presented. The concept is beneficial compared to conventional ion implanted junctions, since dopant activation above the solid solubility in Si can be obtained. When integrated in the PMOS process flow, the resulting Si1−xGex layer is very rough. Several possible causes for low quality epitaxy are discussed and improvements are proposed. It is suggested that the dopant type and/or concentration in the silicon substrate can have an effect on the process.

Selective Epitaxial Growth of Silicon by the A.C. Technique: I . Nonimplanted Substrate/Oxide Surfaces

1995 ◽  
Vol 142 (7) ◽  
pp. 2438-2449 ◽  
Author(s):  
Q. S. Wang ◽  
A. Reisman ◽  
D. Temple ◽  
R. Alberti
Keyword(s):  
Epitaxial Growth ◽  
Oxide Surfaces ◽  
Selective Epitaxial Growth

Thick selective epitaxial growth of silicon at 960°C using silane only

1992 ◽  
Vol 18 (3) ◽  
pp. 237-246 ◽  
Author(s):  
N. Afshar-Hanaii ◽  
J.M. Bonar ◽  
A.G.R. Evans ◽  
G.J. Parker ◽  
C.M.K. Starbuck ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Selective Epitaxial Growth

Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator

2017 ◽  
Vol 56 (10) ◽  
pp. 105503
Author(s):  
Kiichi Furukawa ◽  
Akinobu Teramoto ◽  
Rihito Kuroda ◽  
Tomoyuki Suwa ◽  
Keiichi Hashimoto ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Flat Surface ◽  
Silicon On Insulator ◽  
Thin Silicon ◽  
Ion Implanted

Selective epitaxial growth of silicon in pancake reactors

1988 ◽  
Vol 43 (8) ◽  
pp. 2031-2036 ◽  
Author(s):  
M. Kastelic ◽  
I. Oh ◽  
C.G. Takoudis ◽  
J.A. Friedrich ◽  
G.W. Neudeck
Keyword(s):  
Epitaxial Growth ◽  
Selective Epitaxial Growth
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