Electrical Characterization of Capacitors with AVD-Deposited Hafnium Silicates as High-k Gate Dielectric

2005 ◽  
Vol 152 (11) ◽  
pp. F185 ◽  
Author(s):  
S. Van Elshocht ◽  
U. Weber ◽  
T. Conard ◽  
V. Kaushik ◽  
M. Houssa ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Electrical Characterization ◽  
High K ◽  
High K Gate Dielectric

Electrical Characterization Methodologies for the Assessment of High-k Gate Dielectric Stacks

2019 ◽  
Vol 11 (4) ◽  
pp. 335-346 ◽  
Author(s):  
Chadwin D. Young ◽  
Gennadi Bersuker ◽  
Dawei Heh ◽  
Arnost Neugroschel ◽  
Rino Choi ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Electrical Characterization ◽  
High K ◽  
High K Gate Dielectric

Characterization of high-k gate dielectric films using SIMS

2003 ◽  
Vol 203-204 ◽  
pp. 516-519 ◽  
Author(s):  
T. Yamamoto ◽  
N. Morita ◽  
N. Sugiyama ◽  
A. Karen ◽  
K. Okuno
Keyword(s):  
Gate Dielectric ◽  
Dielectric Films ◽  
High K ◽  
High K Gate Dielectric

Observation and characterization of defects in HfO2 high-K gate dielectric layers

2005 ◽  
Vol 45 (5-6) ◽  
pp. 798-801 ◽  
Author(s):  
Vidya Kaushik ◽  
Martine Claes ◽  
Annelies Delabie ◽  
Sven Van Elshocht ◽  
Olivier Richard ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Dielectric Layers ◽  
High K ◽  
High K Gate Dielectric

Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al2O3 Gate Dielectric Fabricated on SiC Substrates

2015 ◽  
Vol 821-823 ◽  
pp. 937-940 ◽  
Author(s):  
Toby Hopf ◽  
Konstantin Vassilevski ◽  
Enrique Escobedo-Cousin ◽  
Peter King ◽  
Nicholas G. Wright ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Vacuum Sublimation ◽  
Layer Deposition ◽  
High K

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3was grown by atomic layer deposition to function as the gate oxide, with an e-beam evaporated seed layer utilized to promote uniform growth of Al2O3over the graphene. Electrical characterization has been performed on these devices, and temperature-dependent measurements yielded a rise in the maximum transconductance and a significant shifting of the Dirac point as the operating temperature of the transistors was increased.

Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs

2013 ◽  
Vol 43 (1) ◽  
pp. 151-154 ◽  
Author(s):  
Derek W. Johnson ◽  
Jung Hwan Yum ◽  
Todd W. Hudnall ◽  
Ryan M. Mushinski ◽  
Christopher W. Bielawski ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Beryllium Oxide ◽  
Low Leakage ◽  
High K ◽  
High K Gate Dielectric
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