Atomic Layer Etching of Si(100) and Si(111) Using Cl[sub 2] and Ar Neutral Beam

S. D. Park; D. H. Lee; G. Y. Yeom

doi:10.1149/1.1938848

Atomic Layer Etching of Si(100) and Si(111) Using Cl[sub 2] and Ar Neutral Beam

Electrochemical and Solid-State Letters ◽

10.1149/1.1938848 ◽

2005 ◽

Vol 8 (8) ◽

pp. C106 ◽

Cited By ~ 30

Author(s):

S. D. Park ◽

D. H. Lee ◽

G. Y. Yeom

Keyword(s):

Atomic Layer ◽

Neutral Beam ◽

Atomic Layer Etching

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Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film using BCl3 and Ar neutral beam

Applied Physics Letters ◽

10.1063/1.4894523 ◽

2014 ◽

Vol 105 (9) ◽

pp. 093104 ◽

Cited By ~ 11

Author(s):

Young I. Jhon ◽

Kyung S. Min ◽

G. Y. Yeom ◽

Young Min Jhon

Keyword(s):

Atomic Layer ◽

Neutral Beam ◽

Al2o3 Film ◽

Time Resolved ◽

Atomic Layer Etching

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Atomic Scale Etch Depth Control and Low Damage Atomic-Layer Etching of HfO2 Using BCl3 and Ar Neutral Beam

ECS Meeting Abstracts ◽

10.1149/ma2009-02/2/175 ◽

2009 ◽

Keyword(s):

Atomic Layer ◽

Atomic Scale ◽

Neutral Beam ◽

Etch Depth ◽

Depth Control ◽

Atomic Layer Etching

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Atomic layer etching of InP using a low angle forward reflected Ne neutral beam

Applied Physics Letters ◽

10.1063/1.2221504 ◽

2006 ◽

Vol 89 (4) ◽

pp. 043109 ◽

Cited By ~ 32

Author(s):

S. D. Park ◽

C. K. Oh ◽

J. W. Bae ◽

G. Y. Yeom ◽

T. W. Kim ◽

...

Keyword(s):

Atomic Layer ◽

Neutral Beam ◽

Atomic Layer Etching

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A novel damage-free high-k etch technique using neutral beam-assisted atomic layer etching (NBALE) for sub-32nm technology node low power metal gate/high-k dielectric CMOSFETs

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424330 ◽

2009 ◽

Cited By ~ 1

Author(s):

K.S. Min ◽

C. Y. Kang ◽

C. Park ◽

C. S. Park ◽

B. J. Park ◽

...

Keyword(s):

Low Power ◽

Atomic Layer ◽

Neutral Beam ◽

Metal Gate ◽

Technology Node ◽

High K ◽

High K Dielectric ◽

Atomic Layer Etching

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Precise Depth Control and Low-Damage Atomic-Layer Etching of HfO[sub 2] using BCl[sub 3] and Ar Neutral Beam

Electrochemical and Solid-State Letters ◽

10.1149/1.2832427 ◽

2008 ◽

Vol 11 (4) ◽

pp. H71 ◽

Cited By ~ 16

Author(s):

S. D. Park ◽

W. S. Lim ◽

B. J. Park ◽

H. C. Lee ◽

J. W. Bae ◽

...

Keyword(s):

Atomic Layer ◽

Neutral Beam ◽

Depth Control ◽

Atomic Layer Etching

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Low Damage Atomic Layer Etching of ZrO2 by Using BCl3 Gas and Ar Neutral Beam

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2009.1748 ◽

2009 ◽

Vol 9 (12) ◽

Cited By ~ 6

Author(s):

W.S. Lim

Keyword(s):

Atomic Layer ◽

Neutral Beam ◽

Atomic Layer Etching

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Atomic Layer Etching of Silicon Using a Ar Neutral Beam of Low Energy

Korean Journal of Materials Research ◽

10.3740/mrsk.2006.16.4.213 ◽

2006 ◽

Vol 16 (4) ◽

pp. 213-217

Author(s):

Chang-Kwon Oh ◽

Sang-Duk Park ◽

Geun-Young Yeom

Keyword(s):

Atomic Layer ◽

Low Energy ◽

Neutral Beam ◽

Atomic Layer Etching

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Atomic-layer etching of GaN by using an HBr neutral beam

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/6.0000126 ◽

2020 ◽

Vol 38 (3) ◽

pp. 032603

Author(s):

Daisuke Ohori ◽

Takahiro Sawada ◽

Kenta Sugawara ◽

Masaya Okada ◽

Ken Nakata ◽

...

Keyword(s):

Atomic Layer ◽

Neutral Beam ◽

Atomic Layer Etching

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Etch Characteristics of TiO2 Etched by Using an Atomic Layer Etching technique with BCl3 Gas and an Ar Neutral Beam

Journal of the Korean Physical Society ◽

10.3938/jkps.54.976 ◽

2009 ◽

Vol 54 (3) ◽

pp. 976-980 ◽

Cited By ~ 14

Author(s):

Jae Beom Park ◽

Woong Sun Lim ◽

Sang Duk Park ◽

Byoung Jae Park ◽

Geun Young Yeom

Keyword(s):

Atomic Layer ◽

Neutral Beam ◽

Etching Technique ◽

Atomic Layer Etching

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Surface Roughness Variation during Si Atomic Layer Etching by Chlorine Adsorption Followed by an Ar Neutral Beam Irradiation

Electrochemical and Solid-State Letters ◽

10.1149/1.2073667 ◽

2005 ◽

Vol 8 (11) ◽

pp. C177 ◽

Cited By ~ 12

Author(s):

S. D. Park ◽

C. K. Oh ◽

D. H. Lee ◽

G. Y. Yeom

Keyword(s):

Surface Roughness ◽

Atomic Layer ◽

Neutral Beam ◽

Beam Irradiation ◽

Chlorine Adsorption ◽

Atomic Layer Etching

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