Atomic-layer etching of GaN by using an HBr neutral beam

2020 ◽  
Vol 38 (3) ◽  
pp. 032603
Author(s):  
Daisuke Ohori ◽  
Takahiro Sawada ◽  
Kenta Sugawara ◽  
Masaya Okada ◽  
Ken Nakata ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Neutral Beam ◽  
Atomic Layer Etching

Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film using BCl3 and Ar neutral beam

2014 ◽  
Vol 105 (9) ◽  
pp. 093104 ◽  
Author(s):  
Young I. Jhon ◽  
Kyung S. Min ◽  
G. Y. Yeom ◽  
Young Min Jhon
Keyword(s):  
Atomic Layer ◽  
Neutral Beam ◽  
Al2o3 Film ◽  
Time Resolved ◽  
Atomic Layer Etching

Atomic layer etching of InP using a low angle forward reflected Ne neutral beam

2006 ◽  
Vol 89 (4) ◽  
pp. 043109 ◽  
Author(s):  
S. D. Park ◽  
C. K. Oh ◽  
J. W. Bae ◽  
G. Y. Yeom ◽  
T. W. Kim ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Neutral Beam ◽  
Atomic Layer Etching

Precise Depth Control and Low-Damage Atomic-Layer Etching of HfO[sub 2] using BCl[sub 3] and Ar Neutral Beam

2008 ◽  
Vol 11 (4) ◽  
pp. H71 ◽  
Author(s):  
S. D. Park ◽  
W. S. Lim ◽  
B. J. Park ◽  
H. C. Lee ◽  
J. W. Bae ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Neutral Beam ◽  
Depth Control ◽  
Atomic Layer Etching

scholarly journals Atomic Layer Etching of Silicon Using a Ar Neutral Beam of Low Energy

2006 ◽  
Vol 16 (4) ◽  
pp. 213-217
Author(s):  
Chang-Kwon Oh ◽  
Sang-Duk Park ◽  
Geun-Young Yeom
Keyword(s):  
Atomic Layer ◽  
Low Energy ◽  
Neutral Beam ◽  
Atomic Layer Etching

Etch Characteristics of TiO2 Etched by Using an Atomic Layer Etching technique with BCl3 Gas and an Ar Neutral Beam

2009 ◽  
Vol 54 (3) ◽  
pp. 976-980 ◽  
Author(s):  
Jae Beom Park ◽  
Woong Sun Lim ◽  
Sang Duk Park ◽  
Byoung Jae Park ◽  
Geun Young Yeom
Keyword(s):  
Atomic Layer ◽  
Neutral Beam ◽  
Etching Technique ◽  
Atomic Layer Etching
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