The Ohmic Conduction Mechanism in High-Dielectric-Constant ZrO[sub 2] Thin Films

2005 ◽  
Vol 152 (7) ◽  
pp. G542 ◽  
Author(s):  
Ming-Tsong Wang ◽  
Shao-You Deng ◽  
Tsung-Hong Wang ◽  
Bonds Yi-Yi Cheng ◽  
Joseph Ya-min Lee
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Conduction Mechanism ◽  
High Dielectric Constant ◽  
Ohmic Conduction ◽  
High Dielectric

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

Investigation of the conduction mechanism, high dielectric constant, and non-Debye-type relaxor in La0.67Ba0.25Ca0.08MnO3 manganite

2020 ◽  
Vol 31 (14) ◽  
pp. 11810-11818
Author(s):  
Marwa Bourguiba ◽  
Zeineb Raddaoui ◽  
Ahmed Dhahri ◽  
Moez Chafra ◽  
Jemai Dhahri ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Conduction Mechanism ◽  
High Dielectric Constant ◽  
High Dielectric

Laser Assisted Molecular Beam Deposition of Thin Films for Gate Dielectrics Applications

2003 ◽  
Vol 768 ◽  
Author(s):  
Robert L. DeLeon ◽  
James F. Garvey ◽  
Gary S. Tompa ◽  
Richard Moore ◽  
Harry Efstathiadis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Molecular Beam ◽  
High Dielectric Constant ◽  
Film Surface ◽  
Rutherford Back Scattering ◽  
Molecular Beam Deposition ◽  
High Dielectric ◽  
Beam Deposition

AbstractHigh dielectric constant (k), the thermal stability and the chemical stability with respect to reaction with silicon of hafnium oxide (HfO2), and zirconium oxide (ZrO2) places them among the leading candidates for an alternative gate dielectric material. High dielectric constant HfO2 and ZrO2 thin films have successfully been deposited on silicon substrates at a temperature of 27 °C by Laser Assisted Molecular Beam Deposition (LAMBD). The LAMBD process is related to conventional Pulsed Laser Deposition (PLD). In the PLD process, the ablation plume impinges directly upon the substrate to deposit the thin film, whereas in the LAMBD process, the ablation material is expanded within a concurrently pulsed stream of a reactive gas. The gas pulse serves both to create the desired material and to transport the material to the substrate for deposition of the thin film. One advantage of the LAMBD process is that a chemically reactive carrier gas can be selected to produce the desired chemical products. Depositions yielded 35 nm to 135 nm thick HfO2, and ZrO2 films.Structural and chemical characterization of the films were performed by Auger electron spectroscopy (AES), Rutherford back-scattering (RBS), scanning electron microscopy (SEM), and x-ray diffraction (XRD). Film surface was investigated by atomic force microscopy (AFM) while optical characterization was also performed by means of spectroscopic ellipsometry (SE). Within the process window investigated, the film Hf/O and Zr/O ratios was found to be in the range 0.6 to 1.2. The as deposited films were amorphous with refraction index (RI) at 623 nm wavelength films in the range of 1.22 to 1.27 for the HfO2 and in the range of 1.23 to 1.19 for the ZrO2 films.

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