Electrical conduction mechanism in high-dielectric-constant (Ba0.5,Sr0.5)TiO3 thin films

2002 ◽  
Vol 80 (4) ◽  
pp. 655-657 ◽  
Author(s):  
Shao-Te Chang ◽  
Joseph Ya-min Lee
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Conduction ◽  
Conduction Mechanism ◽  
High Dielectric Constant ◽  
Electrical Conduction Mechanism ◽  
High Dielectric

The Ohmic Conduction Mechanism in High-Dielectric-Constant ZrO[sub 2] Thin Films

2005 ◽  
Vol 152 (7) ◽  
pp. G542 ◽  
Author(s):  
Ming-Tsong Wang ◽  
Shao-You Deng ◽  
Tsung-Hong Wang ◽  
Bonds Yi-Yi Cheng ◽  
Joseph Ya-min Lee
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Conduction Mechanism ◽  
High Dielectric Constant ◽  
Ohmic Conduction ◽  
High Dielectric

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

Investigation of the conduction mechanism, high dielectric constant, and non-Debye-type relaxor in La0.67Ba0.25Ca0.08MnO3 manganite

2020 ◽  
Vol 31 (14) ◽  
pp. 11810-11818
Author(s):  
Marwa Bourguiba ◽  
Zeineb Raddaoui ◽  
Ahmed Dhahri ◽  
Moez Chafra ◽  
Jemai Dhahri ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Conduction Mechanism ◽  
High Dielectric Constant ◽  
High Dielectric
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