scholarly journals Corrosion Study of AA2024‐T3 by Scanning Kelvin Probe Force Microscopy and In Situ Atomic Force Microscopy Scratching

1998 ◽  
Vol 145 (7) ◽  
pp. 2295-2306 ◽  
Author(s):  
P. Schmutz ◽  
G. S. Frankel
Keyword(s):  
Atomic Force Microscopy ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Corrosion Study ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Kelvin Probe

scholarly journals Elemental Identification by Combining Atomic Force Microscopy and Kelvin Probe Force Microscopy

ACS Nano ◽  
2018 ◽  
Vol 12 (6) ◽  
pp. 5274-5283 ◽  
Author(s):  
Fabian Schulz ◽  
Juha Ritala ◽  
Ondrej Krejčí ◽  
Ari Paavo Seitsonen ◽  
Adam S. Foster ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Atomic Force

Distinguishing negatively-charged and highly conductive dislocations in gallium nitride using scanning Kelvin probe and conductive atomic force microscopy

2002 ◽  
Vol 743 ◽  
Author(s):  
Blake S. Simpkins ◽  
Edward T. Yu ◽  
Patrick Waltereit ◽  
James S. Speck
Keyword(s):  
Atomic Force Microscopy ◽  
Kelvin Probe ◽  
Conductive Atomic Force Microscopy ◽  
Kelvin Probe Microscopy ◽  
Force Microscopy ◽  
Spatially Correlated ◽  
Atomic Force ◽  
Scanning Kelvin Probe ◽  
Dislocation Type ◽  
Distinct Features

ABSTRACTScanning Kelvin probe microscopy (SKPM) and conductive atomic force microscopy (C-AFM) are used to image surfaces of GaN grown by molecular beam epitaxy (MBE). Numerical simulations are used to assist in the interpretation of SKPM images. Detailed analysis of the same area using both techniques allows imaging of surface potential variations arising from the presence of negatively charged dislocations and dislocation-related current leakage paths. Correlations between the charge state of dislocations, conductivity of leakage current paths, and possibly dislocation type can thereby be established. Approximately 25% of the leakage paths appear to be spatially correlated with negatively charged dislocation features. This is approximately the level of correlation expected due to spatial overlap of randomly distributed, distinct features of the size observed, suggesting that the negatively charged dislocations are distinct from those responsible for localized leakage paths found in GaN. The effects of charged dislocation networks on the local potential profile is modeled and discussed.

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