Structural Investigation of the Bias‐Enhanced Nucleation and Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition

1998 ◽  
Vol 145 (6) ◽  
pp. 2095-2100 ◽  
Author(s):  
Do‐Geun Kim ◽  
Tae‐Yeon Seong ◽  
Young‐Joon Baik
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Structural Investigation ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weihua Wang ◽  
Bing Dai ◽  
Guoyang Shu ◽  
Yang Wang ◽  
Benjian Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Bias Voltage ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
High Density ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition

Diamond nucleation on iridium (001) substrates was investigated under different bias conditions. High-density epitaxial nucleation can be obtained in a narrow bias window. This paper reports both the typical nucleation...

Growth of Highly (110) Oriented Diamond Film by Microwave Plasma Chemical Vapor Deposition

2018 ◽  
Vol 281 ◽  
pp. 893-899 ◽  
Author(s):  
Yi Fan Xi ◽  
Jian Huang ◽  
Ke Tang ◽  
Xin Yu Zhou ◽  
Bing Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Nucleation Stage

In this study, we propose a simple and effective approach to enhance (110) orientation in diamond films grown on (100) Si substrates by microwave plasma chemical vapor deposition. It is found that the crystalline structure of diamond films strongly rely on the CH4 concentration in the nucleation stage. Under the same growth condition, when the CH4 concentration is less than 7% (7%) in the nucleation stage, the diamond films exhibit randomly oriented structure; once the value exceeds 7%, the deposited films are strongly (110) oriented. It could be verified by experiments that the formation of (110) orientation in diamond films are related to the high nucleation density and high fraction of diamond-like carbon existing in nucleation samples.

Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition

1991 ◽  
Vol 8 (7) ◽  
pp. 348-351 ◽  
Author(s):  
Gao Kelin ◽  
Wang Chunlin ◽  
Zhan Rujuan ◽  
Peng Dingkun ◽  
Meng Guangyao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition
Sign in / Sign up

Export Citation Format

Share Document