On the Kinetics of Growth of Anodic Oxide Films

1998 ◽  
Vol 145 (3) ◽  
pp. 898-905 ◽  
Author(s):  
Lei Zhang ◽  
Digby D. Macdonald ◽  
Elzbieta Sikora ◽  
Janusz Sikora
Keyword(s):  
Oxide Films ◽  
Anodic Oxide ◽  
Anodic Oxide Films ◽  
Kinetics Of

Kinetics of the formation of anodic oxide films on tantalum

1963 ◽  
Vol 59 ◽  
pp. 2888 ◽  
Author(s):  
P. H. G. Draper ◽  
P. W. M. Jacobs
Keyword(s):  
Oxide Films ◽  
Anodic Oxide ◽  
Anodic Oxide Films ◽  
Kinetics Of

Kinetics of formation of complex anodic oxide films on aluminium

2002 ◽  
Vol 76 (3) ◽  
pp. 274-278 ◽  
Author(s):  
Assen A. Girginov ◽  
Alexander S. Zahariev ◽  
Maria S. Machkova
Keyword(s):  
Oxide Films ◽  
Anodic Oxide ◽  
Anodic Oxide Films ◽  
Kinetics Of Formation ◽  
Kinetics Of

ANODIC OXIDE FILMS ON INDIUM ANTIMONIDE

1966 ◽  
Vol 44 (6) ◽  
pp. 641-646 ◽  
Author(s):  
A. C. Harkness ◽  
L. Young
Keyword(s):  
Optical Properties ◽  
Indium Antimonide ◽  
Oxide Films ◽  
Anodic Oxide ◽  
Crystal Face ◽  
Anodic Oxide Films ◽  
Breakdown Region ◽  
Kinetics Of Formation ◽  
Kinetics Of ◽  
Transition Voltage

The kinetics of formation of anodic oxide films on different crystal faces of single crystal indium antimonide have been investigated by measurements of charge passed, capacitance, and optical properties. Below a transition or breakdown region of voltage no difference in kinetics was found. Above this voltage a marked difference appeared. The transition voltage was found to depend on both the crystal face and the current density at which the film was formed.

KINETICS OF FORMATION OF ANODIC OXIDE FILMS ON BISMUTH

1962 ◽  
Vol 40 (5) ◽  
pp. 903-920 ◽  
Author(s):  
L. Masing ◽  
L. Young
Keyword(s):  
Steady State ◽  
Oxide Films ◽  
Transient Behavior ◽  
Anodic Oxide ◽  
Transient Kinetics ◽  
Crystal Face ◽  
Anodic Oxide Films ◽  
Kinetics Of Formation ◽  
Kinetics Of ◽  
Better Than

The steady-state and transient kinetics of formation of thin insulating anodic oxide films on bismuth have been investigated. The thickness of the films was determined by the spectrophotometric method. No dependence on the crystal face of the substrate was detected (sensitivity better than 1% with thicker films). The transient behavior was found to be somewhat different from that of tantalum. The activation distances were found to be unusually large. The dielectric properties were also investigated.

Sign in / Sign up

Export Citation Format

Share Document