ANODIC OXIDE FILMS ON INDIUM ANTIMONIDE

1966 ◽  
Vol 44 (6) ◽  
pp. 641-646 ◽  
Author(s):  
A. C. Harkness ◽  
L. Young

The kinetics of formation of anodic oxide films on different crystal faces of single crystal indium antimonide have been investigated by measurements of charge passed, capacitance, and optical properties. Below a transition or breakdown region of voltage no difference in kinetics was found. Above this voltage a marked difference appeared. The transition voltage was found to depend on both the crystal face and the current density at which the film was formed.

1962 ◽  
Vol 40 (5) ◽  
pp. 903-920 ◽  
Author(s):  
L. Masing ◽  
L. Young

The steady-state and transient kinetics of formation of thin insulating anodic oxide films on bismuth have been investigated. The thickness of the films was determined by the spectrophotometric method. No dependence on the crystal face of the substrate was detected (sensitivity better than 1% with thicker films). The transient behavior was found to be somewhat different from that of tantalum. The activation distances were found to be unusually large. The dielectric properties were also investigated.


2002 ◽  
Vol 76 (3) ◽  
pp. 274-278 ◽  
Author(s):  
Assen A. Girginov ◽  
Alexander S. Zahariev ◽  
Maria S. Machkova

1963 ◽  
Vol 59 ◽  
pp. 2888 ◽  
Author(s):  
P. H. G. Draper ◽  
P. W. M. Jacobs

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