A Fundamental Study on n‐ and p ‐ In0.53Ga0.47As in  H 2 O 2 Solution: Electrochemical Behavior and Selective Etching vs. InP

1997 ◽  
Vol 144 (4) ◽  
pp. 1390-1398 ◽  
Author(s):  
A. Theuwis ◽  
W. P. Gomes
Keyword(s):  
Electrochemical Behavior ◽  
Selective Etching ◽  
Fundamental Study

Electrochemical Behavior of Carbon Paste Electrode with Gold-Bearing Pyrite in Bioleaching

2013 ◽  
Vol 825 ◽  
pp. 360-363 ◽  
Author(s):  
Zhi Wu ◽  
Shui Ping Zhong ◽  
Zeng Ling Wu ◽  
Zhong Sheng Huang ◽  
Brenda K.C. Chan
Keyword(s):  
Cyclic Voltammetry ◽  
Carbon Paste Electrode ◽  
Electrochemical Behavior ◽  
Oxidation Rate ◽  
Elemental Sulphur ◽  
Polarization Current ◽  
Carbon Paste ◽  
Fundamental Study ◽  
Paste Electrode ◽  
Gold Bearing

The dissolution of gold-bearing pyrite plays an important role in bioleaching of gold. This paper describes a fundamental study on the electrochemical behavior and reaction mechanisms of gold-bearing pyrite leaching in the form of Carbon Paste Electrode (CPE) with and without microorganisms using Cyclic Voltammetry (CV) and polarization curve. A two step process was suggested from Cyclic voltammetry. Electrode passivation by elemental sulphur was observed below 700mV (vs. SCE), elemental sulphur was then oxidized to sulphate when the electrode potential further increased from 700mV. The polarization current density of CPE and the oxidation rate of pyrite are further enhanced by the presence of microorganisms. Analyses of EDS and XPS confirmed the formation of elemental sulphur and sulphate. This electrochemical method successfully showed its simplicity and reliability to measure oxidation rate of gold bearing pyrite.

Fundamental Study on the Selective Etching of Al0.25Ga0.75As Versus GaAs in Acidic Iodine Solutions

1995 ◽  
Vol 142 (10) ◽  
pp. 3589-3595 ◽  
Author(s):  
P. J. Verpoort ◽  
I. E. Vermeir ◽  
W. P. Gomes
Keyword(s):  
Selective Etching ◽  
Fundamental Study

Fundamental Study of Iodate and Iodine Based Slurries for Copper CMP

2000 ◽  
Vol 613 ◽  
Author(s):  
Seung-Mahn Lee ◽  
Uday Mahajan ◽  
Zhan Chen ◽  
Rajiv K. Singh
Keyword(s):  
Potassium Iodide ◽  
Electrochemical Behavior ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Experimental Results ◽  
Fundamental Study ◽  
Copper Cmp

ABSTRACTThe chemical mechanical polishing of copper in several slurry chemistries based on iodate and iodine oxidizers has been investigated. Benzotriazole (BTA) and potassium iodide (KI) were used for preparing the polishing slurry chemistries based iodate. As observed by the anodic electrochemical behavior of copper and the surface analyses of EDS, it was determined that CuI layer formed in the iodate and iodine based solutions. Especially, in I2 slurry in pH 4, CuI layer formed very fast and uniformly, and passivated the copper. In addition, the highest removal rate using this slurry was obtained. These results were compared to H2O2 based slurries. From these experimental results, the slurry containing 0.1M KIO3 and 0.01M KI, and 0.01N I2 give better results than H2O2 based slurry in copper CMP.

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

Electrochemical behavior of self-assembled monolayers based on functionalized oligothiophenes

1998 ◽  
Vol 95 (6) ◽  
pp. 1339-1342 ◽  
Author(s):  
R. Michalitsch ◽  
A. El Kassmi ◽  
P. Lang ◽  
A. Yassar ◽  
F. Garnier
Keyword(s):  
Electrochemical Behavior ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled
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