Oxygen Precipitation Related Stress-Modified Crack Propagation in High Growth Rate Czochralski Silicon Wafers

2011 ◽  
Vol 159 (2) ◽  
pp. H125-H129 ◽  
Author(s):  
P. K. Kulshreshtha ◽  
YoHan Yoon ◽  
K.M. Youssef ◽  
E.A. Good ◽  
G. Rozgonyi
Keyword(s):  
Growth Rate ◽  
Crack Propagation ◽  
High Growth ◽  
High Growth Rate ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Related Stress

Propagation Behavior of Naturally Initiated Small Crack in Austenitic Heat Resistant Steel under Thermo-Mechanical Fatigue Loading

2013 ◽  
Vol 577-578 ◽  
pp. 373-376
Author(s):  
Yasuhiro Yamazaki ◽  
Wataru Fujiki ◽  
Yutaro Hara
Keyword(s):  
Growth Rate ◽  
Crack Propagation ◽  
High Growth ◽  
Fatigue Loading ◽  
High Growth Rate ◽  
Small Crack ◽  
Low Carbon ◽  
Mechanical Fatigue ◽  
Propagation Behavior ◽  
Crack Propagation Behavior

In this paper, the crack propagation behavior of naturally initiated small crack in in low-carbon/medium-nitrogen 316 stainless steel under thermo-mechanical fatigue loading was investigated. The experimental results indicated that the importance of the investigation of small crack propagation behavior because the information on the basis of physically long crack growth rate provides a dangerous evaluation on reliability to actual components. The small crack exhibits high growth rate under the In-phase TMF loading because of irreversible creep and plastic strains. However, the growth rates of small crack under the Out-of-phase TMF loading were lower because the effect of creep deformation became negligible in such condition.

Effect of oxygen and associated residual stresses on the mechanical properties of high growth rate Czochralski silicon

2013 ◽  
Vol 113 (13) ◽  
pp. 133502 ◽  
Author(s):  
Khaled Youssef ◽  
Meirong Shi ◽  
Chantelle Radue ◽  
Ethan Good ◽  
George Rozgonyi
Keyword(s):  
Mechanical Properties ◽  
Growth Rate ◽  
Residual Stresses ◽  
High Growth ◽  
High Growth Rate ◽  
Czochralski Silicon ◽  
Effect Of Oxygen

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Sae Katsuro ◽  
Weifang Lu ◽  
Kazuma Ito ◽  
Nanami Nakayama ◽  
Naoki Sone ◽  
...  
Keyword(s):  
Growth Rate ◽  
Shell Growth ◽  
Light Output ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Current Injection ◽  
Emission Characteristics ◽  
Multiple Quantum ◽  
Plane Region

Abstract Improving current injection into r- and m-planes of nanowires (NWs) is essential to realizing efficient GaInN/GaN multiple quantum shell (MQS) NW-based light-emitting diodes (LEDs). Here, we present the effects of different p-GaN shell growth conditions on the emission characteristics of MQS NW-LEDs. Firstly, a comparison between cathodoluminescence (CL) and electroluminescence (EL) spectra indicates that the emission in NW-LEDs originates from the top region of the NWs. By growing thick p-GaN shells, the variable emission peak at around 600 nm and degradation of the light output of the NW-LEDs are elaborated, which is attributable to the localization of current in the c-plane region with various In-rich clusters and deep-level defects. Utilizing a high growth rate of p-GaN shell, an increased r-plane and a reduced c-plane region promote the deposition of indium tin oxide layer over the entire NW. Therefore, the current is effectively injected into both the r- and m-planes of the NW structures. Consequently, the light output and EL peak intensity of the NW-LEDs are enhanced by factors of 4.3 and 13.8, respectively, under an injection current of 100 mA. Furthermore, scanning transmission electron microscope images demonstrate the suppression of dislocations, triangular defects, and stacking faults at the apex of the p-GaN shell with a high growth rate. Therefore, localization of current injection in nonradiative recombination centers near the c-plane was also inhibited. Our results emphasize the possibility of realizing high efficacy in NW-LEDs via optimal p-GaN shell growth conditions, which is quite promising for application in the long-wavelength region.

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