Porous Vycor Membranes Modified by Chemical Vapor Deposition of Boron Nitride for Gas Separation

1997 ◽  
Vol 144 (1) ◽  
pp. 349-353 ◽  
Author(s):  
R. A. Levy ◽  
C. Ravindranath ◽  
L. N. Krasnoperov ◽  
J. Opyrchal ◽  
E. S. Ramos
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Gas Separation ◽  
Vapor Deposition ◽  
Chemical Vapor

Low Temperature Chemical Vapor Deposition of Hafnium Nitride−Boron Nitride Nanocomposite Films

2009 ◽  
Vol 21 (23) ◽  
pp. 5601-5606 ◽  
Author(s):  
Navneet Kumar ◽  
Wontae Noh ◽  
Scott R. Daly ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocomposite Films ◽  
Hafnium Nitride

scholarly journals Gas Separation: Metal-Organic Covalent Network Chemical Vapor Deposition for Gas Separation (Adv. Mater. 34/2016)

2016 ◽  
Vol 28 (34) ◽  
pp. 7478-7478
Author(s):  
Nicolas D. Boscher ◽  
Minghui Wang ◽  
Alberto Perrotta ◽  
Katja Heinze ◽  
Mariadriana Creatore ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Separation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Organic

scholarly journals Carbon-assisted chemical vapor deposition of hexagonal boron nitride

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025117 ◽  
Author(s):  
Ariel Ismach ◽  
Harry Chou ◽  
Patrick Mende ◽  
Andrei Dolocan ◽  
Rafik Addou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor

Chemical vapor deposition of boron nitride using premixed borontrichloride and ammonia

1991 ◽  
Vol 6 (11) ◽  
pp. 2393-2396 ◽  
Author(s):  
Vladimir Pavlović ◽  
Horst-Rainer Kötter ◽  
Christoph Meixner
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Elevated Temperatures ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Deposit Formation ◽  
Deposition Zone ◽  
Single Tube ◽  
N Compounds

Chemical vapor deposition (CVD) of boron nitride (BN) is most readily performed using BCl3 and NH3, which are brought into the deposition zone through two separate tubes. This causes some problems: inadequate mixing leading to a nonuniform deposit, formation of solid intermediates, etc. To avoid these problems, the process was performed by mixing BCl3 and NH3 at elevated temperatures (120–220 °C) prior to entering the deposition zone. The reaction between them took place by the forming of volatile stoichiometric B–N compounds (trichloroborazine and iminochloroborane), which were then transported through a single tube into a deposition zone. The resulting deposit was found to be hexagonal boron nitride.

scholarly journals Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP

1991 ◽  
Vol 70 (8) ◽  
pp. 4366-4370 ◽  
Author(s):  
A. Bath ◽  
P. J. van der Put ◽  
J. G. M. Becht ◽  
J. Schoonman ◽  
B. Lepley
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gate Insulators

scholarly journals Thermal Chemical Vapor Deposition of Epitaxial Rhombohedral Boron Nitride from Trimethylboron and Ammonia

2018 ◽  
Author(s):  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Relationship ◽  
Out Of Plane ◽  
Α Al2o3 ◽  
Favorable Conditions ◽  
Relationship Of ◽  
Rhombohedral Boron

Epitaxial rhombohedral boron nitride films were deposited on α-Al2O3(001) substrates by chemical vapor deposition, using trimethylboron, ammonia, and with a low concentration of silane in the growth flux. The depositions were performed at temperatures from 1200 to 1485 °C, pressures from 30 to 90 mbar and N/B ratios from 321 to 1286. The most favorable conditions for epitaxy were: a temperature of 1400 °C, N/B around 964, and pressures below 40 mbar. Analysis by thin film X-ray diffraction showed that most deposited films were polytype-pure epitaxial r-BN with an out-of-plane epitaxial relationship of r-BN[001]∥ w-AlN[001]∥ α-Al2O3[001] and with two in-plane relationships of r-BN[110]∥ w-AlN[110]∥ α-Al2O3[100] and r-BN[110]∥ w-AlN[110]∥ α-Al2O3[1̅00] due to twinning.

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