The Viability of GeH4‐Based In Situ Clean for Low Temperature Silicon Epitaxial Growth

1996 ◽  
Vol 143 (7) ◽  
pp. 2387-2391 ◽  
Author(s):  
C.‐L. Wang ◽  
S. Unnikrishnan ◽  
B.‐Y. Kim ◽  
D.‐L. Kwong ◽  
A. F. Tasch
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth

Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si1-xGex, Films Using Ultraclean LPCVD

1998 ◽  
Vol 533 ◽  
Author(s):  
A. Morrya ◽  
M. Sakuraba ◽  
T. Matsuura ◽  
J. Murota ◽  
I. Kawashima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Partial Pressure ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Deposition Rate ◽  
Epitaxial Films ◽  
Similar Degree ◽  
Gas Mixture ◽  
Heavy Doping

AbstractIn-situ heavy doping of B into Si1-xGex epitaxial films on the Si(100) substrate have been investigated at 550°C in a SiH4(6.0Pa)-GeH4(0.1−6.0Pa)-B2H6(1.25 ×10−5−3.75 × 10−2Pa)-H2(17–24Pa) gas mixture by using an ultraclean hot-wall low-pressure CVD system. The deposition rate increased with increasing GeH4 partial pressure, and it decreased with increasing B2H6 partial pressure only at the higher GeH4 partial pressure. As the B2H6 partial pressure increased, the Ge fraction scarcely changed although the lattice constant of the film decreased. These characteristics can be explained by the suppression of both the SiH4 and GeH4 adsorption/reactions in a similar degree due to B2H6 adsorption on the Si-Ge and/or Ge-Ge bond sites. The B concentration in the film increased proportionally up to 1022cm3 with increasing B2H6 partial pressure.

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

2010 ◽  
Vol 645-648 ◽  
pp. 925-928 ◽  
Author(s):  
Bharat Krishnan ◽  
Joseph Neil Merrett ◽  
Galyna Melnychuk ◽  
Yaroslav Koshka
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Passivation ◽  
Drift Region ◽  
Pin Diodes ◽  
Growth Technique ◽  
Growth Method ◽  
Heavily Doped ◽  
P Type

In this work, the benefits of the low-temperature halo-carbon epitaxial growth at 1300oC to form anodes of 4H-SiC PiN diodes were investigated. Regular-temperature epitaxial growth was used to form an 8.6 μm-thick n-type drift region with net donor concentration of 6.45x1015 cm-3. Trimethylaluminum doping, in situ during blanket low-temperature halo-carbon epitaxial growth, was used to form heavily doped p-type layers. Forward I-V characteristics measured from diodes having different anode areas indicated that the new epitaxial growth technique provides anodes with low values of the series resistance, even without contact annealing. At room temperature, a 100 μm-diameter diode had a forward voltage of 3.75 V at 1000A/cm² before annealing and 3.23 V after annealing for 2 min at 750°C. The reverse breakdown voltage was more than 680 V (on average) in the devices without edge termination or surface passivation.

scholarly journals Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3733
Author(s):  
Jongwan Jung ◽  
Baegmo Son ◽  
Byungmin Kam ◽  
Yong Sang Joh ◽  
Woonyoung Jeong ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Ex Situ ◽  
High Quality ◽  
Reduced Pressure ◽  
Dry Cleaning ◽  
Gaseous Environment

The key process steps for growing high-quality Si-based epitaxial films via reduced pressure chemical vapor deposition (RPCVD) are investigated herein. The quality of the epitaxial films is largely affected by the following steps in the epitaxy process: ex-situ cleaning, in-situ bake, and loading conditions such as the temperature and gaseous environment. With respect to ex-situ cleaning, dry cleaning is found to be more effective than wet cleaning in 1:200 dilute hydrofluoric acid (DHF), while wet cleaning in 1:30 DHF is the least effective. However, the best results of all are obtained via a combination of wet and dry cleaning. With respect to in-situ hydrogen bake in the presence of H2 gas, the level of impurities is gradually decreased as the temperature increases from 700 °C to a maximum of 850 °C, at which no peaks of O and F are observed. Further, the addition of a hydrogen chloride (HCl) bake step after the H2 bake results in effective in-situ bake even at temperatures as low as 700 °C. In addition, the effects of temperature and environment (vacuum or gas) at the time of loading the wafers into the process chamber are compared. Better quality epitaxial films are obtained when the samples are loaded into the process chamber at low temperature in a gaseous environment. These results indicate that the epitaxial conditions must be carefully tuned and controlled in order to achieve high-quality epitaxial growth.

scholarly journals AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing

RSC Advances ◽  
2019 ◽  
Vol 9 (22) ◽  
pp. 12226-12231 ◽  
Author(s):  
Wei-Chung Kao ◽  
Wei-Hao Lee ◽  
Sheng-Han Yi ◽  
Tsung-Han Shen ◽  
Hsin-Chih Lin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Schematic Diagram ◽  
Layer Deposition ◽  
Processing Cycle

The schematic diagram of the processing cycle including the atomic layer annealing (ALA) to achieve low-temperature epitaxial growth of AlN on SiC.

scholarly journals Low-temperature epitaxial growth of in-situ B-doped Si1-xGex films

1993 ◽  
Vol 03 (C3) ◽  
pp. C3-427-C3-432
Author(s):  
J. MUROTA ◽  
F. HONMA ◽  
T. YOSHIDA ◽  
K. GOTO ◽  
T. MAEDA ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth

scholarly journals Low-Temperature Hetero-Epitaxial Growth of Ge on Si by High Density Plasma Chemical Vapor Deposition

2006 ◽  
Vol 934 ◽  
Author(s):  
Malcolm Carroll ◽  
Josephine Sheng ◽  
Jason C. Verley
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Density ◽  
Cmos Process ◽  
Processing Temperature ◽  
Density Plasma

ABSTRACTDemand for integration of optoelectronic functionality (e.g., optical interconnects) with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature (∼ 450°C) germanium deposition processes that may be integrated in to the back-end CMOS process flow. A common challenge to improving the germanium quality is the thermal budget of the in-situ bake, which is used to reduce defect forming oxygen and carbon surface residues. Typical cleaning temperatures to remove significant concentrations of oxygen and carbon have been reported to be approximately 750°C for thermal hydrogen bakes in standard chemical vapor deposition chambers. Germanium device performance using lower peak in-situ cleans (i.e., ∼450°C) has been hampered by additional crystal defectivity, although epitaxy is possible with out complete removal of oxygen and carbon at lower temperatures.Plasma enhanced chemical vapor deposition (PECVD) is used to reduce the processing temperature. Hydrogen plasma assisted in-situ surface preparation of epitaxy has been shown to reduce both carbon and oxygen concentrations and enable epitaxial growth at temperatures as low as ∼150°C. The hydrogen is believed to help produce volatile Si-O and H2O species in the removal of oxygen, although typically this is not reported to occur rapidly enough to completely clear the surface of all oxygen until ∼550°C. In this paper, we describe the use of an in-situ argon/germane high density plasma to help initiate germanium epitaxy on silicon using a peak temperature of approximately 460°C. Germanium is believed to readily break Si-O bonds to form more volatile Ge-O, therefore, argon/germane plasmas offer the potential to reduce the necessary in-situ clean temperature while obtaining similar results as hydrogen in-situ cleans. To the authors knowledge this report is also the first demonstration of germanium epitaxy on silicon using this commercially available high density plasma chamber configuration instead of, for example, remote or electron cyclotron resonance configurations.

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