In-situ low-temperature and epitaxial growth of high-T c superconducting films using oxygen-discharge-assisted laser ablation method

1991 ◽  
Author(s):  
Yongchang Fan ◽  
Chengwu An ◽  
Dongsheng Lu ◽  
Zaiguang Li
Keyword(s):  
Laser Ablation ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Superconducting Films ◽  
Laser Ablation Method ◽  
Oxygen Discharge

Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si1-xGex, Films Using Ultraclean LPCVD

1998 ◽  
Vol 533 ◽  
Author(s):  
A. Morrya ◽  
M. Sakuraba ◽  
T. Matsuura ◽  
J. Murota ◽  
I. Kawashima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Partial Pressure ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Deposition Rate ◽  
Epitaxial Films ◽  
Similar Degree ◽  
Gas Mixture ◽  
Heavy Doping

AbstractIn-situ heavy doping of B into Si1-xGex epitaxial films on the Si(100) substrate have been investigated at 550°C in a SiH4(6.0Pa)-GeH4(0.1−6.0Pa)-B2H6(1.25 ×10−5−3.75 × 10−2Pa)-H2(17–24Pa) gas mixture by using an ultraclean hot-wall low-pressure CVD system. The deposition rate increased with increasing GeH4 partial pressure, and it decreased with increasing B2H6 partial pressure only at the higher GeH4 partial pressure. As the B2H6 partial pressure increased, the Ge fraction scarcely changed although the lattice constant of the film decreased. These characteristics can be explained by the suppression of both the SiH4 and GeH4 adsorption/reactions in a similar degree due to B2H6 adsorption on the Si-Ge and/or Ge-Ge bond sites. The B concentration in the film increased proportionally up to 1022cm3 with increasing B2H6 partial pressure.

The Viability of GeH4‐Based In Situ Clean for Low Temperature Silicon Epitaxial Growth

1996 ◽  
Vol 143 (7) ◽  
pp. 2387-2391 ◽  
Author(s):  
C.‐L. Wang ◽  
S. Unnikrishnan ◽  
B.‐Y. Kim ◽  
D.‐L. Kwong ◽  
A. F. Tasch
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

2010 ◽  
Vol 645-648 ◽  
pp. 925-928 ◽  
Author(s):  
Bharat Krishnan ◽  
Joseph Neil Merrett ◽  
Galyna Melnychuk ◽  
Yaroslav Koshka
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Passivation ◽  
Drift Region ◽  
Pin Diodes ◽  
Growth Technique ◽  
Growth Method ◽  
Heavily Doped ◽  
P Type

In this work, the benefits of the low-temperature halo-carbon epitaxial growth at 1300oC to form anodes of 4H-SiC PiN diodes were investigated. Regular-temperature epitaxial growth was used to form an 8.6 μm-thick n-type drift region with net donor concentration of 6.45x1015 cm-3. Trimethylaluminum doping, in situ during blanket low-temperature halo-carbon epitaxial growth, was used to form heavily doped p-type layers. Forward I-V characteristics measured from diodes having different anode areas indicated that the new epitaxial growth technique provides anodes with low values of the series resistance, even without contact annealing. At room temperature, a 100 μm-diameter diode had a forward voltage of 3.75 V at 1000A/cm² before annealing and 3.23 V after annealing for 2 min at 750°C. The reverse breakdown voltage was more than 680 V (on average) in the devices without edge termination or surface passivation.

Structural and Optical Properties of β-FeSi2/Si(100) Prepared by Laser Ablation Method

1997 ◽  
Vol 478 ◽  
Author(s):  
H. Kakemoto ◽  
Y. Makita ◽  
A. Obara ◽  
Y. Tsai ◽  
S. Sakuragi ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Room Temperature ◽  
Horizontal Gradient ◽  
In Situ Observation ◽  
X Ray Diffraction ◽  
Energy Devices ◽  
Laser Ablation Method ◽  
Semiconducting Properties ◽  
Morphology Characterization

Abstractβ-FeSi2 is a promising material for the application of various electronic, optoelectronic and energy devices. We present here the semiconducting properties of β-FeSi2 films on Si(100) substrate prepared by laser ablation method. Samples were grown using poly-crystalline bulk β-FeSi2 prepared by horizontal gradient freeze method. For the monitoring of growth, in-situ observation of ablation plume was made through fluorescence spectroscopy. Reflection of highenergy electron beam diffraction (RHEED) was also made in-situ to see the surface morphology. Characterization of the films by X-ray diffraction presented purely P3(220) orientation. Raman scattering measurements at room temperature also indicated that the grown films are semiconducting β-FeSi2. Optical absorption spectra at room temperature showed absorption coefficient higher than 105 cm−1 above the band-gap (˜1.2 eV). It was revealed that high quality semiconducting β-FeSi2 films can be fabricated by laser ablation method without post-annealing.

scholarly journals Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3733
Author(s):  
Jongwan Jung ◽  
Baegmo Son ◽  
Byungmin Kam ◽  
Yong Sang Joh ◽  
Woonyoung Jeong ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Ex Situ ◽  
High Quality ◽  
Reduced Pressure ◽  
Dry Cleaning ◽  
Gaseous Environment

The key process steps for growing high-quality Si-based epitaxial films via reduced pressure chemical vapor deposition (RPCVD) are investigated herein. The quality of the epitaxial films is largely affected by the following steps in the epitaxy process: ex-situ cleaning, in-situ bake, and loading conditions such as the temperature and gaseous environment. With respect to ex-situ cleaning, dry cleaning is found to be more effective than wet cleaning in 1:200 dilute hydrofluoric acid (DHF), while wet cleaning in 1:30 DHF is the least effective. However, the best results of all are obtained via a combination of wet and dry cleaning. With respect to in-situ hydrogen bake in the presence of H2 gas, the level of impurities is gradually decreased as the temperature increases from 700 °C to a maximum of 850 °C, at which no peaks of O and F are observed. Further, the addition of a hydrogen chloride (HCl) bake step after the H2 bake results in effective in-situ bake even at temperatures as low as 700 °C. In addition, the effects of temperature and environment (vacuum or gas) at the time of loading the wafers into the process chamber are compared. Better quality epitaxial films are obtained when the samples are loaded into the process chamber at low temperature in a gaseous environment. These results indicate that the epitaxial conditions must be carefully tuned and controlled in order to achieve high-quality epitaxial growth.

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