High-Temperature Annealing Behavior of p-Type Doping Characteristics in Mg-Doped GaN

2004 ◽  
Vol 151 (9) ◽  
pp. G574 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Osamu Fujishima ◽  
Tetsu Kachi
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Annealing Behavior ◽  
P Type ◽  
Mg Doped

Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals

2018 ◽  
Vol 924 ◽  
pp. 293-296 ◽  
Author(s):  
Kiyo Okawa ◽  
Yuina Mannen ◽  
Kentaro Shioura ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
High Temperature ◽  
Basal Plane ◽  
Stacking Fault ◽  
High Temperature Annealing ◽  
Annealing Behavior ◽  
Nitrogen Doped ◽  
Electrical Resistivities ◽  
C 30 ◽  
Induced Changes

The annealing behavior of electrical resistivities perpendicular and parallel to the basal plane of heavily nitrogen-doped 4H-SiC crystals was investigated. The temperature dependencies of the resistivities exhibited characteristic behaviors after multiple rounds of high-temperature annealing (1100°C, 30 min). High-temperature annealing induced stacking fault formation to various extents in heavily nitrogen-doped 4H-SiC crystals. Based on these results, we discuss the cause and mechanism of the observed annealing-induced changes in electrical resistivities of the crystals.

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

2009 ◽  
Vol 156-158 ◽  
pp. 493-498
Author(s):  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Electrical Activation ◽  
Structural Defects ◽  
High Resistivity ◽  
Al Alloy ◽  
High Temperature Annealing ◽  
Capping Layer ◽  
P Type ◽  
Ion Implanted

This paper reports a detailed study of the electrical activation and the surface morphology of 4H-SiC implanted with different doping ions (P for n-type doping and Al for p-type doping) and annealed at high temperature (1650–1700 °C) under different surface conditions (with or without a graphite capping layer). The combined use of atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning capacitance microscopy (SCM) allowed to clarify the crucial role played by the implant damage both in evolution of 4H-SiC surface roughness and in the electrical activation of dopants after annealing. The high density of broken bonds by the implant makes surface atoms highly mobile and a peculiar step bunching on the surface is formed during high temperature annealing. This roughness can be minimized by using a capping layer. Furthermore, residual lattice defects or precipitates were found in high dose implanted layers even after high temperature annealing. Those defects adversely affect the electrical activation, especially in the case of Al implantation. Finally, the electrical properties of Ni and Ti/Al alloy contacts on n-type and p-type implanted regions of 4H-SiC were studied. Ohmic behavior was observed for contacts on the P implanted area, whilst high resistivity was obtained in the Al implanted layer. Results showed a correlation of the electrical behavior of contacts with surface morphology, electrical activation and structural defects in ion-implanted, particularly, Al doped layer of 4H-SiC.

scholarly journals High Temperature Annealing of MBE-grown Mg-doped GaN

2017 ◽  
Vol 864 ◽  
pp. 012018 ◽  
Author(s):  
S Contreras ◽  
L Konczewicz ◽  
H Peyre ◽  
S Juillaguet ◽  
M Al Khalfioui ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Mg Doped
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