Anomalous Hall Effect in Manganese Ion-Implanted Highly Carbon-Doped Gallium Arsenide

2004 ◽  
Vol 7 (9) ◽  
pp. G182
Author(s):  
J. D. Lim ◽  
K. S. Suh ◽  
S. B. Shim ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Carbon Doped ◽  
Manganese Ion ◽  
Ion Implanted

Observation of the Strong Negative Anomalous Hall Effect in Co Ion-implanted ZnO Single Crystals

2010 ◽  
Vol 56 (2) ◽  
pp. 562-566
Author(s):  
Hee Jae Kang ◽  
Y. Y. Song ◽  
K. H. Park ◽  
K. S. Park ◽  
S. K. Oh ◽  
...  
Keyword(s):  
Hall Effect ◽  
Single Crystals ◽  
Anomalous Hall Effect ◽  
Ion Implanted

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

scholarly journals 2D‐Berry‐Curvature‐Driven Large Anomalous Hall Effect in Layered Topological Nodal‐Line MnAlGe

2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Nodal Line ◽  
Berry Curvature ◽  
Curvature Driven

scholarly journals Anomalous Hall effect in a magnetically extended topological insulator heterostructure

2020 ◽  
Vol 4 (9) ◽  
Author(s):  
Nan Liu ◽  
Xuefan Niu ◽  
Yuxin Liu ◽  
Qinghua Zhang ◽  
Lin Gu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Topological Insulator ◽  
Anomalous Hall Effect

Multiple Weyl fermions and tunable quantum anomalous Hall effect in 2D half-metal with huge spin-related energy gap

2021 ◽  
Vol 551 ◽  
pp. 149390
Author(s):  
Weizhen Meng ◽  
Xiaoming Zhang ◽  
Weiwang Yu ◽  
Ying Liu ◽  
Lu Tian ◽  
...  
Keyword(s):  
Hall Effect ◽  
Energy Gap ◽  
Anomalous Hall Effect ◽  
Half Metal ◽  
Related Energy ◽  
Quantum Anomalous Hall Effect ◽  
Weyl Fermions

scholarly journals Half-Dirac Semimetal and Quantum Anomalous Hall Effect in Kagome Cd2N3 Lattice

2020 ◽  
Author(s):  
Xinyang Li ◽  
Weixiao Ji ◽  
Peiji Wang ◽  
Chang-wen Zhang
Keyword(s):  
Hall Effect ◽  
Quantum State ◽  
Anomalous Hall Effect ◽  
Topological Phases ◽  
Dirac Semimetal ◽  
Quantum Anomalous Hall Effect ◽  
Dirac Materials ◽  
Low Dimensionality ◽  
Dirac Semimetals ◽  
Topological Phases Of Matter

Half-Dirac semimetals (HDSs), which possess 100% spin-polarizations for Dirac materials, are highly desirable for exploring various topological phases of matter, as low-dimensionality opens unprecedented opportunities for manipulating the quantum state...

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