Fabrication of InGaAsP/InP Two-Dimensional Periodic Nanostructure with Variable Sizes and Periods Using Laser Holography and Reactive Ion Etching

2004 ◽  
Vol 7 (1) ◽  
pp. G11 ◽  
Author(s):  
Ji-Myon Lee ◽  
Su Hwan Oh ◽  
Chul-Wook Lee ◽  
Hyunsung Ko ◽  
Sahnggi Park ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Two Dimensional ◽  
Ion Etching ◽  
Laser Holography ◽  
Periodic Nanostructure

Sub-Microstructures Formed by Means of Reactive Ion Etching in Multilayers of Two-Dimensional Fine-Particle Arrays

2002 ◽  
Vol 31 (5) ◽  
pp. 524-525 ◽  
Author(s):  
Sachiko I. Matsushita ◽  
Yoshie Yagi ◽  
Akira Fujishima
Keyword(s):  
Fine Particle ◽  
Reactive Ion Etching ◽  
Two Dimensional ◽  
Ion Etching

Fabrication of InP Submicron Pillars for Two-Dimensional Photonic Crystals by Reactive Ion Etching

1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 7172-7176 ◽  
Author(s):  
Hitoshi Hatate ◽  
Masayuki Hashimoto ◽  
Hirofumi Shirakawa ◽  
Yasufumi Fujiwara ◽  
Yoshikazu Takeda ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Reactive Ion Etching ◽  
Two Dimensional ◽  
Ion Etching

DEEP REACTIVE ION ETCHING FOR PILLAR TYPE NANOPHOTONIC CRYSTAL

2005 ◽  
Vol 04 (04) ◽  
pp. 567-574 ◽  
Author(s):  
SELIN H. G. TEO ◽  
A. Q. LIU ◽  
G. L. SIA ◽  
C. LU ◽  
J. SINGH ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Reactive Ion Etching ◽  
Gas Flows ◽  
Two Dimensional ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Deep Uv ◽  
The Many ◽  
Two Dimensional Photonic Crystal

Experimental results and techniques developed for time multiplexed deep reactive ion etching of nano-photonic crystals are presented. Specifically, the high aspect ratio pillar type two-dimensional photonic crystal (PhC) structure on silicon is fabricated and studied for its high potential in application to lightwave circuits and also for discussion of the many unique challenges involved in its fabrication process as opposed to standard larger scale devices. In the experiments, patterns of nano-dots were first obtained using deep UV lithography and transferred to a silicon oxide hardmask prior to DRIE processing. The iteration of DRIE experiments with varying process parameters then allowed for a characterization of the varying impact of each etching parameter such as coil/ platen/ etch power, multiplexing cycling gas flows and timing patterns etc. After much optimization of sidewall etch angle and also reduction of the scalloping effect, the latest result obtained for such nano-pillar type PhC designed for application in communication is derived to have a high AR of 33.

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