Thickness Dependence of Microstructure of Laterally Crystallized Poly-Si Thin Films and Electrical Characteristics of Low-Temperature Poly-Si TFTs

2003 ◽  
Vol 150 (8) ◽  
pp. G494 ◽  
Author(s):  
Ting-Kuo Chang ◽  
Ching-Wei Lin ◽  
Yuan-Hsun Chang ◽  
Chang-Ho Tseng ◽  
Fang-Tsun Chu ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Thickness Dependence ◽  
Electrical Characteristics

Low-temperature electrical characteristics of Bi3.15Nd0.85Ti3O12 thin films

2007 ◽  
Vol 90 (6) ◽  
pp. 062902 ◽  
Author(s):  
Di Wu ◽  
Guoliang Yuan ◽  
Aidong Li
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electrical Characteristics

Observation by HVEM of the martensite transformation and the superconducting transition in Nb3Sn

1988 ◽  
Vol 46 ◽  
pp. 788-789
Author(s):  
M. A. Kirk ◽  
M. C. Baker ◽  
B. J. Kestel ◽  
H. W. Weber
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Superconducting State ◽  
Martensite Transformation ◽  
Sputter Deposition ◽  
Diffusion Reaction ◽  
Solute Diffusion ◽  
Superconducting Transition ◽  
Twin Boundaries ◽  
Martensite Structure

It is well known that a number of compound superconductors with the A15 structure undergo a martensite transformation when cooled to the superconducting state. Nb3Sn is one of those compounds that transforms, at least partially, from a cubic to tetragonal structure near 43 K. To our knowledge this transformation in Nb3Sn has not been studied by TEM. In fact, the only low temperature TEM study of an A15 material, V3Si, was performed by Goringe and Valdre over 20 years ago. They found the martensite structure in some foil areas at temperatures between 11 and 29 K, accompanied by faults that consisted of coherent twin boundaries on {110} planes. In pursuing our studies of irradiation defects in superconductors, we are the first to observe by TEM a similar martensite structure in Nb3Sn.Samples of Nb3Sn suitable for TEM studies have been produced by both a liquid solute diffusion reaction and by sputter deposition of thin films.

THICKNESS DEPENDENCE OF CATHODOLUMINESCENCE IN THIN FILMS

1989 ◽  
Vol 50 (C6) ◽  
pp. C6-177-C6-177
Author(s):  
J. YUAN ◽  
S. BERGER ◽  
L. M. BROWN
Keyword(s):  
Thin Films ◽  
Thickness Dependence

Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

2009 ◽  
Vol 94 (22) ◽  
pp. 222110 ◽  
Author(s):  
S. S. N. Bharadwaja ◽  
C. Venkatasubramanian ◽  
N. Fieldhouse ◽  
S. Ashok ◽  
M. W. Horn ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Charge Carrier ◽  
Vanadium Oxide ◽  
Transport Mechanism ◽  
Oxide Thin Films ◽  
Hopping Transport ◽  
Dc Sputtering ◽  
Pulsed Dc ◽  
Vanadium Oxide Thin Films

A novel low-temperature growth of uniform CuInS2 thin films and their application in selenization/sulfurization-free CuInS2 solar cells

2021 ◽  
Vol 26 ◽  
pp. 102050
Author(s):  
Mehdi Dehghani ◽  
Ershad Parvazian ◽  
Nastaran Alamgir Tehrani ◽  
Nima Taghavinia ◽  
Mahmoud Samadpour
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Cuins2 Thin Films
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