Chemical, Physical, and Electrical Characterizations of Oxygen Plasma Assisted Chemical Vapor Deposited Yttrium Oxide on Silicon

2003 ◽  
Vol 150 (5) ◽  
pp. F102 ◽  
Author(s):  
D. Niu ◽  
R. W. Ashcraft ◽  
Z. Chen ◽  
S. Stemmer ◽  
G. N. Parsons
Keyword(s):  
Yttrium Oxide ◽  
Oxygen Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Electrical Characterizations

scholarly journals Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
R. Lukose ◽  
M. Lisker ◽  
F. Akhtar ◽  
M. Fraschke ◽  
T. Grabolla ◽  
...  
Keyword(s):  
Large Scale ◽  
Oxygen Plasma ◽  
Chemical Vapor ◽  
Limiting Factors ◽  
Adhesion Properties ◽  
Si Substrates ◽  
Wetting Contact Angle ◽  
Angle Measurements ◽  
Chemical Vapor Deposited ◽  
Contact Angle Measurements

AbstractOne of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.

scholarly journals Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma

Carbon ◽  
2014 ◽  
Vol 79 ◽  
pp. 664-669 ◽  
Author(s):  
R. Rozada ◽  
P. Solís-Fernández ◽  
J.I. Paredes ◽  
A. Martínez-Alonso ◽  
H. Ago ◽  
...  
Keyword(s):  
Oxygen Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

THE FORM EFFECTS OF MAGNETORESISTIVITY IN p-TYPE DIAMOND FILMS

2008 ◽  
Vol 22 (04) ◽  
pp. 359-364
Author(s):  
CHUN-YANG KONG ◽  
JIE XU ◽  
YU-TING CUI ◽  
WAN WANG ◽  
GUO-PING QING ◽  
...  
Keyword(s):  
Oxygen Plasma ◽  
Magnetic Field Intensity ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Length Ratio ◽  
Geometric Form ◽  
Calculation Formula ◽  
Chemical Vapor Deposited ◽  
P Type ◽  
Form Effect

The geometric form effects of magnetoresistivity (MR) from chemical vapor deposited p-type diamond films were investigated. The MR patterns (width/length ratio = 1, 2, 3, 4, 5, 6) were produced on p-type diamond films by photolithography and ion etching in oxygen plasma. The experimental results showed that the MR in diamond films with the strip structure changed with width–length ratio at magnetic field intensity of 3 T. The changes of MR strongly depended on the geometric form of the samples. With the width–length ratio increasing from 1 to 6, the MR increases from 0.08 to 1.0. It was almost changing linearly with the increase of width-to-length ratio. The geometric form effect is closely related to the Hall effect. A calculation formula of form effect of MR was presented.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

Sign in / Sign up

Export Citation Format

Share Document