Open-Circuit Study of Stain Etching Processes Leading to the Formation of Porous Silicon Layers

2003 ◽  
Vol 150 (5) ◽  
pp. C335 ◽  
Author(s):  
J. González Velasco
Silicon ◽  
2019 ◽  
Vol 12 (7) ◽  
pp. 1761-1768
Author(s):  
Lary H. Slewa ◽  
Tariq A. Abbas ◽  
Naser M. Ahmed ◽  
Z. Hassan
Keyword(s):  

1997 ◽  
Vol 297 (1-2) ◽  
pp. 9-12 ◽  
Author(s):  
D Dimova-Malinovska ◽  
M Sendova-Vassileva ◽  
N Tzenov ◽  
M Kamenova
Keyword(s):  

2006 ◽  
Vol 915 ◽  
Author(s):  
Tayyar Dzhafarov ◽  
Cigdem Oruc Lus ◽  
Sureyya AYDIN ◽  
Emel Cingi

AbstractIn this work we present data on investigation of the current-voltage and capacitance characteristics of Au/PS Schottky type structures in the presence of different hydrogen-containing solutions (glucose, ethanol, methanol, boric acid, sodium tetraborate pentahydrate, sodium borohydride, benzine, KOH). Generation of the open-circuit voltage and short-circuit current density and capacitance up to 0.55 V, 25 mA/cm2 and 1μF respectively on placing of Au/PS structures in these solutions was discovered. This effect is mainly caused by hydrogen component of solutions. The possible mechanism generation of voltage and capacitance in metal/PS sensors hydrogen-containing solutions is suggested. The advantage of metal/PS Schottky type sensors consists in working without applying external electricity.


2005 ◽  
Vol 90 (2-3) ◽  
pp. 310-314 ◽  
Author(s):  
Fan Guang Zeng ◽  
Chang Chun Zhu ◽  
Xiao Nan Fu ◽  
Wen Wei Wang ◽  
Zi Min Zhao
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document