scholarly journals Preparation of powdered porous silicon by stain etching method

2009 ◽  
Vol 17 (0) ◽  
pp. 103-109
Author(s):  
Toshihiro Nakamura
Keyword(s):  
Porous Silicon ◽  
Etching Method ◽  
Stain Etching

Homogeneous luminescent stain etched porous silicon elaborated by a new multi-step stain etching method

2013 ◽  
Vol 284 ◽  
pp. 324-330 ◽  
Author(s):  
M. Hajji ◽  
M. Khalifa ◽  
S. Ben Slama ◽  
H. Ezzaouia
Keyword(s):  
Porous Silicon ◽  
Etching Method ◽  
Stain Etching

Synthesis of Architectural-Cubic Porous Silicon by Electroless Stain Etching in V2O5 and HF Solution

Silicon ◽  
2019 ◽  
Vol 12 (7) ◽  
pp. 1761-1768
Author(s):  
Lary H. Slewa ◽  
Tariq A. Abbas ◽  
Naser M. Ahmed ◽  
Z. Hassan
Keyword(s):  
Porous Silicon ◽  
Stain Etching

Positive and Negative Pulse Etching Method of Porous Silicon Fabrication

2007 ◽  
Vol 24 (5) ◽  
pp. 1361-1364 ◽  
Author(s):  
Ge Jin ◽  
Yin Wen-Jing ◽  
Long Yong-Fu ◽  
Ding Xun-Min ◽  
Hou Xiao-Yuan
Keyword(s):  
Porous Silicon ◽  
Negative Pulse ◽  
Etching Method

Preparation of thin porous silicon layers by stain etching

1997 ◽  
Vol 297 (1-2) ◽  
pp. 9-12 ◽  
Author(s):  
D Dimova-Malinovska ◽  
M Sendova-Vassileva ◽  
N Tzenov ◽  
M Kamenova
Keyword(s):  
Porous Silicon ◽  
Stain Etching

Fabrication of porous silicon using a gas etching method

2006 ◽  
Vol 497 (1-2) ◽  
pp. 83-89 ◽  
Author(s):  
S. Boughaba ◽  
K. Wang
Keyword(s):  
Porous Silicon ◽  
Etching Method

Effect of Electrochemical Reaction Enviroment on the Surface Morphology and Photoluminescence of Porous Silicon

2013 ◽  
Vol 737 ◽  
pp. 60-66
Author(s):  
Ali Syari’ati ◽  
Veinardi Suendo
Keyword(s):  
Porous Silicon ◽  
Surface Morphology ◽  
Silicon Oxide ◽  
Quantum Confinement Effect ◽  
Etching Rate ◽  
Green Emission ◽  
Wet Etching ◽  
Electrochemical Anodization ◽  
Etching Method ◽  
Silicon Based

Porous silicon (p-Si) is a well-known silicon based material that can emit visible light at room temperature. The radiative recombination that originated from quantum confinement effect shows photoluminescence (PL) in red, while the defect on silicon oxide at the surface of p-Si shows in blue-green region. Porous silicon can be synthesized through two methods; wet-etching and electrochemical anodization using hydrofluoric acid as the main electrolyte. The electrochemical anodization is more favorable due to faster etching rate at the surface than the conventional wet-etching method. The objective of this research is to show that both of porous silicons can be synthesized using the same main electrolyte but by varying the reaction environment during anodization/etching process. Here, we shows the wet-etching method that enhanced by polarization concentration will produce porous silicon with silicon oxide defects by means blue-green emission, while direct electrochemical anodization will produce samples that emit red PL signal. The effect of introducing KOH into the electrolyte was also studied in the case of enhanced-wet-etching method. Surface morphology of porous silicon and their photoluminescence were observed by Scanning Electron Microscope and PL spectroscopy, respectively.

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