Characterization of Silicon-on-Insulator Structures by High-Resolution X-Ray Diffraction

2002 ◽  
Vol 149 (8) ◽  
pp. G490 ◽  
Author(s):  
I. V. Antonova ◽  
V. P. Popov ◽  
J. Bak-Misiuk ◽  
J. Z. Domagala
Keyword(s):  
High Resolution ◽  
Silicon On Insulator ◽  
X Ray Diffraction ◽  
X Ray

Characterization of the silicon on insulator film in bonded wafers by high resolution x-ray diffraction

1999 ◽  
Vol 75 (6) ◽  
pp. 787-789 ◽  
Author(s):  
G. M. Cohen ◽  
P. M. Mooney ◽  
E. C. Jones ◽  
K. K. Chan ◽  
P. M. Solomon ◽  
...  
Keyword(s):  
High Resolution ◽  
Silicon On Insulator ◽  
X Ray Diffraction ◽  
X Ray ◽  
Insulator Film

Characterization and Monitoring of Silicon-on-Insulator Fabrication Processes by High-Resolution X-ray Diffraction

2002 ◽  
Vol 717 ◽  
Author(s):  
G. M. Cohen ◽  
P.M. Mooney ◽  
H. Park ◽  
C. Cabral ◽  
E.C. Jones
Keyword(s):  
High Resolution ◽  
Solid Phase ◽  
Silicon On Insulator ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Shallow Junctions ◽  
Non Destructive ◽  
Processing Steps

AbstractHigh-resolution x-ray diffraction (HRXRD) was used to monitor silicon-on-insulator (SOI) processing steps. The use of HRXRD is attractive since it is non-destructive and can be applied directly to product wafers. We show the usefulness of this technique for the characterization of amorphizing implants for shallow junctions, solid phase re-crystallization of implanted junctions, cobalt-silicide formation, and oxidation; all are critical processes for CMOS fabrication on SOI.

scholarly journals High-resolution characterization of the forbidden Si 200 and Si 222 reflections

2015 ◽  
Vol 48 (2) ◽  
pp. 528-532 ◽  
Author(s):  
Peter Zaumseil
Keyword(s):  
High Resolution ◽  
Angular Range ◽  
Angular Divergence ◽  
X Ray Diffraction ◽  
Multiple Diffraction ◽  
Diffraction Plane ◽  
X Ray ◽  
Sample Orientation ◽  
Plane Sample

The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range.

High Resolution X-Ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1997 ◽  
pp. 439-448 ◽  
Author(s):  
A. Sanz-Hervás ◽  
C. Villar ◽  
M. Aguilar ◽  
A. Sacedón ◽  
J. L. Sánchez-Rojas ◽  
...  
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray
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