Conformal Platinum Thin Films Prepared by Chemical Vapor Deposition under High Oxygen Partial Pressure

2002 ◽  
Vol 5 (2) ◽  
pp. C28 ◽  
Author(s):  
Masahiko Hiratani ◽  
Toshihide Nabatame ◽  
Yuichi Matsui ◽  
Shinichiro Kimura
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Oxygen ◽  
High Oxygen Partial Pressure

Structure and photoresponse characteristics of ZnO thin films grown at high oxygen partial pressure

2007 ◽  
Vol 308 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Yanfei Gu ◽  
Xiaomin Li ◽  
Junliang Zhao ◽  
Weidong Yu ◽  
Xiangdong Gao
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
High Oxygen ◽  
Zno Thin Films ◽  
High Oxygen Partial Pressure

Effect of oxygen partial pressure during pulsed laser deposition on the orientation of CeO2 thin films grown on (100) silicon

2003 ◽  
Vol 18 (8) ◽  
pp. 1753-1756 ◽  
Author(s):  
Woong Choi ◽  
Tim Sands
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Oxygen ◽  
Laser Deposition ◽  
High Oxygen Partial Pressure ◽  
Grain Structures ◽  
Effect Of Oxygen

The effect of oxygen partial pressure on the preferred orientation of CeO2 thin films was investigated by depositing CeO2 thin films and Pb(Zr, Ti)O3/CeO2 multilayers on Si (100) substrates by pulsed laser deposition. CeO2 thin films exhibited random polycrystalline grain structures at high oxygen partial pressure (≥40 mtorr), a result that is contrary to previous reports. The relationship of the preferred orientations observed between Pb(Zr, Ti)O3 films and the CeO2 layer underneath confirmed that random polycrystalline CeO2 was obtained at high oxygen partial pressure. It was suggested that x-ray diffraction data in previous reports might have been misinterpreted.

Ion beam sputter deposition of YBa2Cu3O7−δ thin films

1993 ◽  
Vol 8 (12) ◽  
pp. 3032-3042 ◽  
Author(s):  
B.J. Kellett ◽  
J.H. James
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
High Oxygen ◽  
Ion Beam Sputtering ◽  
Film Properties ◽  
High Oxygen Partial Pressure ◽  
Beam Sputtering

This article addresses issues associated with in situ growth of superconducting YBa2Cu3O7−δ thin films by ion beam sputtering. High oxygen partial pressure during ion beam deposition can cause significant beam broadening and oxidation of filaments and grids. Also, many of the targets used for processing YBCO are unstable when sputtered in a high oxygen partial pressure. It is shown that ion beam sputtering can produce YBCO films of comparable quality to those produced by laser ablation or dc magnetron sputtering. Typical film properties are Tco = 91 K and Jc (77 K) = 106 A cm−2. It appears that the oxygen gas pressure during the postdeposition cooldown has a more important influence on film properties than the oxygen partial pressure during deposition.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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