In Situ Rapid Thermal Oxidation and Reduction of Copper Thin Films and Their Applications in Ultralarge Scale Integration

2001 ◽  
Vol 148 (12) ◽  
pp. G669 ◽  
Author(s):  
Yao Zhi Hu ◽  
Rahul Sharangpani ◽  
Sing-Pin Tay
2018 ◽  
Vol 33 (8) ◽  
pp. 085001
Author(s):  
Atzin David Ruíz Pérez ◽  
M B de la Mora ◽  
J L Benítez ◽  
R Castañeda-Guzmán ◽  
Jorge Alejandro Reyes-Esqueda ◽  
...  

2017 ◽  
Vol 121 (24) ◽  
pp. 245308 ◽  
Author(s):  
Fabien Rozé ◽  
Olivier Gourhant ◽  
Elisabeth Blanquet ◽  
François Bertin ◽  
Marc Juhel ◽  
...  

2013 ◽  
Vol 63 (9) ◽  
pp. 1794-1798 ◽  
Author(s):  
Sung-Jae Joo ◽  
Je Hoon Choi ◽  
Seong Jeen Kim ◽  
Sang-Cheol Kim

2020 ◽  
Vol 70 (11) ◽  
pp. 914-919
Author(s):  
Miyeon CHEON ◽  
Yousil LEE ◽  
Sujae KIM ◽  
Se Young jeong*

1994 ◽  
Vol 342 ◽  
Author(s):  
John M. Grant

ABSTRACTA comparison study of the effectiveness of in-situ vapor/gas phase cleaning versus conventional wet RCA based cleaning has been performed. The effectiveness of the cleans were compared using Surface Photo-Voltage (SPV) measurements of the quality of a 70Å gate dielectric. Dielectrics grown in oxygen by Rapid Thermal Oxidation (RTO) were measured using SPV. The vapor/gas phase cleaning processes studied have three steps corresponding to the baths in a conventional RCA-based clean. A clean using O2 was used to clean the organic contaminants normally cleaned in the SC-1 bath, a C12 based step corresponded to the SC-2 solution, and an HF/alcohol etch was used to remove the oxide normally etched using buffered HF. It was seen that temperature control of the cleaning chamber walls is necessary to insure reproducible processes and reasonable pump down times. Measurements by SPV indicate that dielectrics grown after vapor-gas phase cleaning have lower interface trap densities than oxides grown after an RCA-based clean.


2002 ◽  
Vol 89 (1-3) ◽  
pp. 269-273 ◽  
Author(s):  
A Terrasi ◽  
S Scalese ◽  
R Adorno ◽  
E Ferlito ◽  
M Spadafora ◽  
...  

2001 ◽  
Vol 45 (11) ◽  
pp. 1957-1961 ◽  
Author(s):  
A. Natarajan ◽  
L.K. Bera ◽  
W.K. Choi ◽  
T. Osipowicz ◽  
H.L. Seng

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