Location control of crystal grains in excimer laser crystallization of silicon thin films

2003 ◽  
Vol 83 (3) ◽  
pp. 434-436 ◽  
Author(s):  
Hideya Kumomi
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Excimer Laser Crystallization ◽  
Crystal Grains

Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

2015 ◽  
Vol 1120-1121 ◽  
pp. 361-368
Author(s):  
Li Jie Deng ◽  
Wei He ◽  
Zheng Ping Li
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Silicon Film ◽  
Threshold Energy ◽  
Nanocrystalline Silicon ◽  
Lateral Growth ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Excimer Laser Crystallization

Nanocrystalline silicon (nc-Si) thin film on glass substrate is subjected to excimer laser crystallized by varying the laser energy density in the range of 50~600 mJ/cm2. The effect of excimer laser crystallization on the structure of silicon film is investigated using Raman spectroscopy, X-ray diffraction, atomic force microscopy and scanning electron microscopy. The results show that polycrystalline silicon thin films can be obtained by excimer laser crystallization of nc-Si films. A laser threshold energy density of 200 mJ/cm2 is estimated from the change of crystalline fraction and surface roughness of the treated films. The growth of grain is observed and the crystallization mechanism is discussed based on the super lateral growth model. The nanocrystalline silicon grains in the films act as seeds for lateral growth to large grains.

Location Control of Crystal Grains in Excimer Laser Crystallization of Silicon Thin Films for Single-Grain TFTs

2004 ◽  
Vol 808 ◽  
Author(s):  
Hideya Kumomi ◽  
Hiroaki Wakiyama ◽  
Gou Nakagawa ◽  
Kenji Makihira ◽  
Tanemasa Asano
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Excimer Laser ◽  
High Performance ◽  
Seed Crystal ◽  
Molten Silicon ◽  
Laser Crystallization ◽  
Single Grain ◽  
Excimer Laser Crystallization ◽  
Crystal Grains

ABSTRACTLocation of crystal grains is controlled in excimer laser crystallization (ELC) of amorphous Si (a-Si) thin films, aiming at a high-performance single-grain thin film transistor (TFT) whose channel is inside a single crystal grain with no grain boundary in the channel. The location control is achieved by manipulating seed-crystal forming sites in the starting thin film. The sites are small portions of the a-Si thin film, typically 1 μm in diameter, only in which nanometer-sized crystallites are embedded in the amorphous matrix. During the ELC, at least one crystallite survives the melting duration and serves as a seed crystal for the resolidification of the surrounding molten silicon. As a result, large crystal grains are formed at the predetermined sites. The TFTs whose channels are fabricated at the location-controlled crystal grains exhibit higher performance than the random polycrystalline Si (poly-Si) TFTs.

Effects of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films

1995 ◽  
Vol 34 (Part 1, No. 4A) ◽  
pp. 1759-1764 ◽  
Author(s):  
Ryoichi Ishihara ◽  
Wen-Chang Yeh ◽  
Takeo Hattori ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Films ◽  
Pulse Duration ◽  
Excimer Laser ◽  
Light Pulse ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Excimer Laser Crystallization
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