Threshold Voltage Instability Due to Oxygen Thermal Donor Impurities in Metal Oxide Semiconductor Field Effect Transistors

1999 ◽  
Vol 146 (11) ◽  
pp. 4298-4302 ◽  
Author(s):  
M. Murata ◽  
R. Nayve ◽  
T. Mihara ◽  
Y. Kondoh ◽  
T. Iwamori
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Instability ◽  
Thermal Donor

Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

2007 ◽  
Vol 90 (14) ◽  
pp. 143502 ◽  
Author(s):  
C. Z. Zhao ◽  
M. B. Zahid ◽  
J. F. Zhang ◽  
G. Groeseneken ◽  
R. Degraeve ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Instability

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

2019 ◽  
Vol 216 (24) ◽  
pp. 1900538 ◽  
Author(s):  
Mingchao Yang ◽  
Liwen Sang ◽  
Meiyong Liao ◽  
Masataka Imura ◽  
Hongdong Li ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Instability
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