Properties of Copper Films Prepared by Chemical Vapor Deposition for Advanced Metallization of Microelectronic Devices

1999 ◽  
Vol 146 (9) ◽  
pp. 3248-3254 ◽  
Author(s):  
R. Kröger ◽  
M. Eizenberg ◽  
D. Cong ◽  
N. Yoshida ◽  
L. Y. Chen ◽  
...  
2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.


1991 ◽  
Vol 02 (C2) ◽  
pp. C2-889-C2-895
Author(s):  
H. DALLAPORTA ◽  
Z. HAMMADI ◽  
R. PIERRISNARD ◽  
A. CROS

2000 ◽  
Vol 88 (4) ◽  
pp. 1867-1872 ◽  
Author(s):  
R. Kröger ◽  
M. Eizenberg ◽  
E. Rabkin ◽  
D. Cong ◽  
L. Chen

2007 ◽  
Vol 10 (5) ◽  
pp. D51 ◽  
Author(s):  
Yu-Lin Kuo ◽  
Chiapyng Lee ◽  
Gene Chen ◽  
Kou-Liang Liu ◽  
Yee-Wen Yen

2003 ◽  
Vol 83 (6) ◽  
pp. 1225-1227
Author(s):  
F. Ross ◽  
C. V. Thompson ◽  
T. Chiang ◽  
H. H. Sawin

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