Defect Depth Profile in CdTe:CI by Positron Annihilation

1999 ◽  
Vol 3 (3) ◽  
pp. 150 ◽  
Author(s):  
Z. L. Peng
Keyword(s):  
Positron Annihilation ◽  
Depth Profile ◽  
Defect Depth

Determination of the defect depth profile after saw cutting of GaAs wafers measured by positron annihilation

1998 ◽  
Vol 84 (4) ◽  
pp. 2255-2262 ◽  
Author(s):  
F. Börner ◽  
S. Eichler ◽  
A. Polity ◽  
R. Krause-Rehberg ◽  
R. Hammer ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Depth Profile ◽  
Defect Depth

The Depth Profile of Free Volume in Drug Delivery Polymers Studied by Positron Annihilation Spectroscopy

2004 ◽  
Vol 445-446 ◽  
pp. 319-321 ◽  
Author(s):  
Ying Li ◽  
R. Zhang ◽  
H. Chen ◽  
J. Zhang ◽  
Ryoichi Suzuki ◽  
...  
Keyword(s):  
Drug Delivery ◽  
Positron Annihilation ◽  
Free Volume ◽  
Depth Profile ◽  
Positron Annihilation Spectroscopy

Burst Tests on Pipeline Containing Irregular Shaped Corrosion Defects

2008 ◽  
Author(s):  
Adilson C. Benjamin ◽  
Aldo R. Franzoi ◽  
Jose´ Luiz F. Freire ◽  
Ronaldo D. Vieira ◽  
Jorge L. C. Diniz
Keyword(s):  
Depth Profile ◽  
Effective Area ◽  
Metal Loss ◽  
Defect Depth ◽  
Corrosion Defect ◽  
Spark Erosion ◽  
X80 Steel ◽  
Corrosion Defects ◽  
Tubular Specimens ◽  
Outside Diameter

A corrosion defect can be considered as being of a regular shape if its defect depth profile is relatively smooth and the longitudinal area of metal loss is approximately rectangular. A corrosion defect can be considered as being of an irregular shape if its defect depth profile presents one or more major peaks in depth. In this paper the burst tests of four tubular specimens are presented. In these tests the tubular specimens were loaded with internal pressure only. The specimens were cut from longitudinal welded tubes made of API 5L X80 steel with a nominal outside diameter of 457.2 mm (18 in) and a nominal wall thickness of 7.93 mm (0.312 in). Each of the four specimens had one external irregular shaped corrosion defect, machined using spark erosion. Measurements were carried out in order to determine the actual dimensions of each tubular specimen and its respective defect. Tensile specimens and impact test specimens were tested to determine material properties. The failure pressures measured in the laboratory tests are compared with those predicted by six assessments methods, namely: the ASME B31G method, the RSTRENG 085dL method, the DNV RP-F101 method for single defects, the RPA method, the RSTRENG Effective Area method and the DNV RP-F101 method for complex shaped defects.

X-ray topography studies of the defect depth profile in processed silicon wafers

1993 ◽  
Vol 26 (4A) ◽  
pp. A65-A68 ◽  
Author(s):  
P J Halfpenny ◽  
G S Green ◽  
B K Tanner
Keyword(s):  
Depth Profile ◽  
Silicon Wafers ◽  
Defect Depth ◽  
X Ray

Annealing Properties of Defects in BF2+ Implanted Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
T. Kitano ◽  
M. Watanabe ◽  
A. Yaoita ◽  
S. Oguro ◽  
A. Uedono ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Thermal Annealing ◽  
Depth Profile ◽  
Annealing Temperature ◽  
Projected Range ◽  
Large Size ◽  
Open Volume ◽  
Major Species

AbstractThe annealing properties of defects in BF2+ implanted silicon were investigated using positron annihilation, TEM and SIMS techniques. For the as-implanted specimens, the major species of defects was identified to be divacancies. After thermal annealing, vacancy-fluorine complexes were formed. The size of open volume in the vacancy-fluorine complexes became larger with increasing annealing temperature. Even after 1100 °C , the vacancy-fluorine complexes were still stable with the size of open volume close to V5. The depth profile of vacancy-fluorine complexes was not largely changed after re-crystallization. In this way, the fluorine atoms played an important role in forming the defects with a large size of open volume. After 1100°C annealing, the fluorine atoms piled up at two regions; the projected range of fluorine and the original amorphous/crystalline interface, where bubbles were observed by TEM. The vacancy-fluorine complexes detected by positron annihilation might be precursors of the bubbles observed by TEM.

Investigation of Light-Induced Defect Depth Profile in Hydrogenated Amorphous Silicon Films

2002 ◽  
Vol 41 (Part 2, No. 11B) ◽  
pp. L1297-L1299 ◽  
Author(s):  
Satoshi Shimizu ◽  
Paul Stradins ◽  
Michio Kondo ◽  
Akihisa Matsuda
Keyword(s):  
Amorphous Silicon ◽  
Depth Profile ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Defect Depth ◽  
Hydrogenated Amorphous

Annealing Properties of Defects in Bf2+ Implanted Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
T. Kitano ◽  
M. Watanabe ◽  
A. Yaoita ◽  
S. Oguro ◽  
A. Uedono ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Thermal Annealing ◽  
Depth Profile ◽  
Annealing Temperature ◽  
Projected Range ◽  
Large Size ◽  
Open Volume ◽  
Major Species

AbstractThe annealing properties of defects in BF2+ implanted silicon were investigated using positron annihilation, TEM and SIMS techniques. For the as-implanted specimens, the major species of defects was identified to be divacancies. After thermal annealing, vacancy-fluorine complexes were formed. The size of open volume in the vacancy-fluorine complexes became larger with increasing annealing temperature. Even after 1100 °C, the vacancy-fluorine complexes were still stable with the size of open volume close to V5. The depth profile of vacancy-fluorine complexes was not largely changed after re-crystallization. In this way, the fluorine atoms played an important role in forming the defects with a large size of open volume. After 1100°C annealing, the fluorine atoms piled up at two regions; the projected range of fluorine and the original amorphous/crystalline interface, where bubbles were observed by TEM. The vacancy-fluorine complexes detected by positron annihilation might be precursors of the bubbles observed by TEM.

Asymmetric Positron Interactions with Chiral Quartz Crystals?

2017 ◽  
Vol 373 ◽  
pp. 221-226 ◽  
Author(s):  
J. David van Horn ◽  
Fei Wu ◽  
Gerald Corsiglia ◽  
Yan Ching Jean
Keyword(s):  
Positron Annihilation ◽  
Depth Profile ◽  
Chiral Recognition ◽  
Shape Parameter ◽  
Positron Beam ◽  
Positron Annihilation Lifetime Spectroscopy ◽  
Doppler Broadening ◽  
Quartz Crystals ◽  
Positron Annihilation Lifetime ◽  
The Way

We have studied the interaction of the positron with chiral left-or right-handed quartz crystals. In Doppler-broadening experiments, using a mono-energetic positron beam there is a differential depth profile for positrons implanted in LH or RH z-cut quartz as identified by a shape parameter (S). Further, in bulk positron annihilation lifetime spectroscopy (PALS) experiments, the lifetime (τ 2) attributed to free annihilation of the positron interacting with the chiral lattice exhibits a larger value for the LH quartz, and the associated intensity (I2) is also significantly different—RH quartz is consistently 10% greater than the LH crystal. The τ3 lifetime and its intensity, I3, attributed to positronium interacting with defects in the quartz, also appears to exhibit differences between the enantiomeric sets of crystals. These observations may demonstrate chiral recognition using a positron annihilation technique, pave the way for a broad range of positron experiments, and may help inform hypotheses of chirality recognition, selection, or induction by beta radiation.

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