Electrical Characteristics of Thin Cerium Oxide Film on Silicon Substrate by Reactive DC Sputtering

2001 ◽  
Vol 4 (9) ◽  
pp. F15 ◽  
Author(s):  
Tung Ming Pan ◽  
Chao Hsin Chien ◽  
Tan Fu Lei ◽  
Tien Sheng Chao ◽  
Tiao Yuan Huang
Keyword(s):  
Oxide Film ◽  
Cerium Oxide ◽  
Silicon Substrate ◽  
Electrical Characteristics ◽  
Dc Sputtering

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Silicon Substrate ◽  
Processing Technique ◽  
Electrical Characteristics ◽  
Localization Method ◽  
The Right ◽  
Induced Defects

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

Metal-oxide-semiconductor characteristics of lanthanum cerium oxide film on Si

2012 ◽  
Vol 107 (2) ◽  
pp. 459-467 ◽  
Author(s):  
Way Foong Lim ◽  
Zainovia Lockman ◽  
Kuan Yew Cheong
Keyword(s):  
Oxide Film ◽  
Metal Oxide ◽  
Cerium Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Preparation of Cerium Dioxide Film by Anodization in Na2C2O4-NH3∙H2O-H2O-(CH2OH)2 Electrolyte

2017 ◽  
Vol 748 ◽  
pp. 7-11
Author(s):  
Xiao Zhen Liu ◽  
Wei Ren Rong ◽  
Xiao Zhou Liu ◽  
Xiao Hui Ren ◽  
Jie Chen ◽  
...  
Keyword(s):  
Oxide Film ◽  
Ethylene Glycol ◽  
Cerium Oxide ◽  
Cerium Dioxide ◽  
Raw Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Heat Treated ◽  
Scanning Electron Microcopy ◽  
Dioxide Film

The cerium dioxide films were prepared with cerium foils as raw materials by anodization in Na2C2O4-NH3∙H2O-H2O-(CH2OH)2 electrolyte. The anodic cerium oxide film was heat treated at 550°C. The cerium dioxide films were characterized with X-ray diffraction (XRD), energy-dispersive analyses of X-ray (EDAX), Fourier transform infrared (FTIR) techniques and scanning electron microcopy (SEM), respectively. The anodic cerium oxide film is semi crystalline film. The heat treated anodic cerium oxide film at 550°C is the fluorite-structured cerium dioxide film, and the crystal structure of the cerium dioxide film becomes more complete than that of the anodic cerium oxide film. The cerium dioxide film is porous film. The water, ethylene glycol and CO2 are adsorbed in the anodic cerium oxide film. The adsorbing water, ethylene glycol and CO2 in the anodic cerium oxide film are removed at 550°C. The cerium dioxide film has strong absorption in the range of 1400~4000cm-1.

Electrical Characteristics of Thermal Spray Silicon Coatings

2000 ◽  
Vol 624 ◽  
Author(s):  
S.Y. Tan ◽  
R.J. Gambino ◽  
R. Goswami ◽  
S. Sampath ◽  
H. Herman
Keyword(s):  
Silicon Substrate ◽  
Resistivity Measurement ◽  
Thermal Spraying ◽  
Monocrystalline Silicon ◽  
Vacuum Plasma Spray ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Band Bending ◽  
Van Der Pauw ◽  
Characteristic Pressure

ABSTRACTPolycrystalline silicon deposits were formed on a monocrystalline silicon substrate by thermal spraying. The resulting structure exhibits a device characteristic. Pressure-induced transformations of silicon, namely, Si-III (BC-8) and Si-IX are identified by X-ray diffraction in a Si-I matrix on deposits formed by vacuum plasma spray. The presence of the Si-III and Si-IX indicates that the pressure-quenched silicon deposit is highly conductive, as determined by four-point van der Pauw resistivity measurement. Hall mobility measurements, combined with photoconductivity results, indicate that the highly conductive silicon deposit displays the same range of mobility as a polycrystalline deposit containing only Si-I. The silicon deposit, with or without metastable phases, displays the same photoconductivity properties. The silicon deposit on a monocrystalline silicon substrate exhibits rectifying I–Vcharacteristics, possibly caused by band bending of trapping states associated with impurities segregating at the polycrystalline deposit/monocrystalline substrate interface

Sign in / Sign up

Export Citation Format

Share Document