scholarly journals Ultraclean Two-Stage Aerosol Reactor for Production of Oxide-Passivated Silicon Nanoparticles for Novel Memory Devices

2001 ◽  
Vol 148 (5) ◽  
pp. G265 ◽  
Author(s):  
Michele L. Ostraat ◽  
Jan W. De Blauwe ◽  
Martin L. Green ◽  
L. Douglas Bell ◽  
Harry A. Atwater ◽  
...  
Keyword(s):  
Silicon Nanoparticles ◽  
Memory Devices ◽  
Two Stage ◽  
Passivated Silicon

Hydrogen-assisted spark discharge generation of highly crystalline and surface-passivated silicon nanoparticles

2017 ◽  
Vol 114 ◽  
pp. 139-145 ◽  
Author(s):  
Dongjoon Lee ◽  
Kiwoong Lee ◽  
Dae Seong Kim ◽  
Jong-Kwon Lee ◽  
Sei Jin Park ◽  
...  
Keyword(s):  
Silicon Nanoparticles ◽  
Spark Discharge ◽  
Passivated Silicon

Future Silicon Nanocrystal Nonvolatile Memory Technology

2001 ◽  
Vol 686 ◽  
Author(s):  
Michele L. Ostraat ◽  
Jan W. De Blauwe
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Channel Length ◽  
Charge Storage ◽  
Memory Devices ◽  
Two Stage ◽  
Nanocrystal Memory

AbstractA great deal of research interest is being invested in the fabrication and characterization of nanocrystal structures as charge storage memory devices. In these flash memory devices, it is possible to measure threshold voltage shifts due to charge storage of only a few electrons per nanocrystal at room temperature. Although a variety of methods exist to fabricate nanocrystals and to incorporate them into device layers, control over the critical nanocrystal dimensions, tunnel oxide thickness, and interparticle separation and isolation remains difficult to achieve. This control is vital to produce reliable and consistent devices over large wafer areas. To address these control issues, we have developed a novel two-stage ultra clean reactor in which the Si nanocrystals are generated as single crystal, nonagglomerated, spherical aerosol particles from silane decomposition at 950°C at concentrations exceeding 108 cm−3 at sizes below 10 nm. Using existing aerosol instrumentation, it is possible to control the particle size to approximately 10% on diameter. In the second reactor, particles are passivated with a high quality oxide layer with shell thickness controllable from 0.7 to 2.0 nm. The two-stage aerosol reactor is integrated to a 200 mm wafer deposition chamber such that controlled particle densities can be deposited thermophoretically. With nanocrystal deposits of 1013 cm−2, contamination of transition metals and other elements can be controlled to less than 1010 atoms cm−2.We have fabricated 0.2 μm channel length aerosol nanocrystal floating gate memory devices using conventional MOS ULSI processing on 200 mm wafers. The aerosol nanocrystal memory devices exhibit normal transistor characteristics with drive current 30 μA/μm, subthreshold slope 200 mV/dec, and drain induced barrier lowering 100 mV/V, typical values for thick gate dielectric high substrate doped nonvolatile memory devices. Uniform Fowler-Nordheim tunneling is used to program and erase these memory devices. Despite 5 nm tunnel oxides, threshold voltage shifts > 2 V have been achieved with microsecond program and millisecond erase times at moderate operating voltages. The aerosol devices also exhibit excellent endurance cyclability with no window closure observed after 105 cycles. Furthermore, reasonable disturb times and long nonvolatility are obtained, illustrating the inherent advantage of discrete nanocrystal charge storage. No drain disturb was detected even at drain biases of 4V, indicating that little or no charge conduction occurs in the nanocrystal layer. We have demonstrated promise for aerosol nanocrystal memory devices. However, numerous issues exist for the future of nanocrystal devices. These technology issues and challenges will be discussed as directions for future work.

Mechanochemical Synthesis of Blue Luminescent Alkyl/Alkenyl-Passivated Silicon Nanoparticles

2007 ◽  
Vol 19 (22) ◽  
pp. 3984-3988 ◽  
Author(s):  
A. S. Heintz ◽  
M. J. Fink ◽  
B. S. Mitchell
Keyword(s):  
Mechanochemical Synthesis ◽  
Silicon Nanoparticles ◽  
Passivated Silicon

Water Adsorption on Oxygen Passivated Silicon Nanoparticles

2011 ◽  
Vol 3 (5) ◽  
pp. 622-628 ◽  
Author(s):  
Ch. Rajesh ◽  
Sumati Patil ◽  
Suwarna Datar ◽  
D. Bhattacharyya ◽  
A. K. Tripathi ◽  
...  
Keyword(s):  
Water Adsorption ◽  
Silicon Nanoparticles ◽  
Passivated Silicon

Tomographic Study of Silicon Nanoparticles in Nanocrystalline Non-Volatile Flash Memory Devices by EFTEM

2012 ◽  
Author(s):  
YongKai Zhou ◽  
Jie Zhu ◽  
AnYan Du ◽  
YouNan Hua ◽  
ZhiQiang Mo ◽  
...  
Keyword(s):  
Flash Memory ◽  
Silicon Nanoparticles ◽  
Tomographic Reconstruction ◽  
Memory Devices ◽  
Plan View ◽  
Si Nanoparticle ◽  
Thin Film Layer ◽  
Si Nanoparticles ◽  
Key Factor ◽  
Film Layer

Abstract The distribution of Si nanoparticles, both dimensional and spatial, is a key factor affecting the performance of non-volatile flash memory devices. A new FIB method has been developed to prepare ultra-thin plan view specimens, containing only the Si nanoparticle matrix thin film layer, from fully processed nanocrystalline flash memory devices. The morphology and distribution of Si nanoparticles were then studied by EFTEM 3D tomographic reconstruction.

Optical and photoelectron spectroscopic studies of alkyl-passivated silicon nanoparticles

2007 ◽  
Vol 43 (1-3) ◽  
pp. 229-232 ◽  
Author(s):  
A. Tanaka ◽  
R. Saito ◽  
T. Kamikake ◽  
M. Imamura ◽  
H. Yasuda
Keyword(s):  
Silicon Nanoparticles ◽  
Spectroscopic Studies ◽  
Passivated Silicon

Thermal evaporation and x-ray photostability of dodecyl-passivated silicon nanoparticles

2012 ◽  
Vol 45 (35) ◽  
pp. 355303 ◽  
Author(s):  
Paul R Coxon ◽  
Shane P Ashby ◽  
Mark D Frogley ◽  
Yimin Chao
Keyword(s):  
Silicon Nanoparticles ◽  
Thermal Evaporation ◽  
X Ray ◽  
Passivated Silicon
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