Defect Photoluminescence of Undoping ZnO Films and Its Dependence on Annealing Conditions

2001 ◽  
Vol 148 (3) ◽  
pp. G110 ◽  
Author(s):  
Bixia Lin ◽  
Zhuxi Fu ◽  
Yunbo Jia ◽  
Guihong Liao
Keyword(s):  
Zno Films ◽  
Annealing Conditions

Effects of annealing conditions and film thickness on electrical and optical properties of epitaxial Al-doped ZnO films

2016 ◽  
Vol 599 ◽  
pp. 19-26 ◽  
Author(s):  
S. Kuprenaite ◽  
A. Abrutis ◽  
V. Kubilius ◽  
T. Murauskas ◽  
Z. Saltyte ◽  
...  
Keyword(s):  
Optical Properties ◽  
Film Thickness ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Annealing Conditions ◽  
Doped Zno

scholarly journals Influence of annealing conditions of ZnO films on the properties of ZnS films pr epared by sulfurizing ZnO films

2005 ◽  
Vol 54 (4) ◽  
pp. 1874
Author(s):  
Wang Bao-Yi ◽  
Zhang Ren-Gang ◽  
Zhang Hui ◽  
Wan Dong-Yun ◽  
Wei Long
Keyword(s):  
Zno Films ◽  
Annealing Conditions ◽  
Zns Films

Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

2007 ◽  
Vol 22 (10) ◽  
pp. 2668-2675 ◽  
Author(s):  
Z.W. Liu ◽  
S.W. Yeo ◽  
C.K. Ong
Keyword(s):  
Hole Concentration ◽  
Film Structure ◽  
Zno Films ◽  
Zno Film ◽  
Annealing Conditions ◽  
Zinc Nitride ◽  
Alternative Approach ◽  
Oxidative Annealing ◽  
P Type ◽  
Type Conduction

N-doped and (Al,N)-codoped ZnO films were synthesized by oxidative annealing of (Zn + Zn3N2) films, which were fabricated by reactive magnetron sputtering. Both n- and p-type conductions were obtained in these ZnO:N and ZnO:AlN films. Optimal oxidation treatments for achieving p-type ZnO are annealing at 400–600 °C for 10–60 min, depending on the film thickness and morphology. The electric properties were found to be very sensitive to the annealing conditions and film structure. As-deposited (Zn + Zn3N2) films with and without Al addition had carrier concentrations of 1021–1022 cm−3. After conversion to ZnO, the n-type films had a carrier concentrations up to 1019 cm−3, whereas the p-type ZnO:N films had hole concentrations of 1014–1016 cm−3. (Al,N)-codoping increased the hole concentration of p-type film to 1018 cm−3 despite a decrease in Hall mobility. The photoluminescence properties of the p-type ZnO films were also investigated. The synthesis of p-type ZnO:AlN by oxidative annealing is believed to provide an alternative approach to realize p-type conduction in codoped ZnO film by using N2 as the N source.

Influence of Annealing Atmosphere on Microstructure and Optical Properties of ZnO Thin Films

2018 ◽  
Vol 281 ◽  
pp. 673-678
Author(s):  
Jing Shang ◽  
Liao Ying Zheng ◽  
Xue Shi ◽  
Jiang Tao Zeng ◽  
Guo Rong Li
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Hexagonal Wurtzite Structure ◽  
Zno Thin Films ◽  
Zno Films ◽  
Annealing Atmosphere ◽  
Radio Frequency Magnetron Sputtering ◽  
Native Defects ◽  
Silicon Chips ◽  
Annealing Conditions

In this work, the ZnO films are deposited on conducting silicon chips by radio frequency magnetron sputtering. The as-deposited thin films are annealed at 800 °C in a N2, O2 and CO+N2 atmosphere for 1h, respectively. The microstructure and electrical properties of the films are comprehensively investigated. XRD studies reveal that the ZnO films have a hexagonal wurtzite structure and they are highly oriented along (002) direction. The surface roughness of ZnO films decreased after annealing, which indicates better film quality. Room temperature PL spectrum is used to investigate the band gap and native defects existing in the films. Defects of thin films for different annealing conditions are analyzed in detail and the possible mechanism of the defects emission is discussed. We suggest that annealing atmosphere of CO+N2 is the most suitable annealing conditions for obtaining ZnO thin films with better crystal quality and good luminescence performance.

Analysis of Sputtered Zinc Oxide Films

1980 ◽  
Vol 38 ◽  
pp. 416-417
Author(s):  
T. A. Emma ◽  
M. P. Singh
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Piezoelectric Materials ◽  
Oxide Films ◽  
Optical Quality ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Sputtered Films ◽  
Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

Effect of annealing conditions on structural transformation of ZnS thin film

2006 ◽  
Vol 2006 (suppl_23_2006) ◽  
pp. 287-292 ◽  
Author(s):  
T. Kryshtab ◽  
J. Palacios-Gómez ◽  
M. Mazin
Keyword(s):  
Thin Film ◽  
Structural Transformation ◽  
Annealing Conditions

Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

Immobilization of ZnO Suspension on Glass Substrate to Remove Filtration During the Removal of Remazol Red R from Aqueous Solution

2016 ◽  
Vol 12 (6) ◽  
pp. 4127-4133
Author(s):  
Nazmul Kayes ◽  
Jalil Miah ◽  
Md. Obaidullah ◽  
Akter Hossain ◽  
Mufazzal Hossain
Keyword(s):  
Aqueous Solution ◽  
Glass Substrate ◽  
Uv Light ◽  
Aqueous Suspension ◽  
Light Irradiation ◽  
Zno Films ◽  
Light Sources ◽  
Zno Film ◽  
Semiconductor Oxides ◽  
Remazol Red

Photodegradation of textile dyes in the presence of an aqueous suspension of semiconductor oxides has been of growing interest. Although this method of destruction of dyes is efficient, the main obstacle of applying this technique in the industry is the time and cost involving separation of oxides from an aqueous suspension. In this research, an attempted was made to develop ZnO films on a glass substrate by simple immobilization method for the adsorption and photodegradation of a typical dye, Remazol Red R (RRR) from aqueous solution. Adsorption and photodegradation of  RRR were performed in the presence of glass supported ZnO film. Photodegradation of the dye was carried out by varying different parameters such as the catalyst dosage, initial concentrations of RRR, and light sources. The percentage of adsorption as well as photodegradation increased with the amount of ZnO, reaches a maximum and then decreased. Maximum degradation has been found under solar light irradiation as compared to UV-light irradiation. Removal efficiency was also found to be influenced by the pre-sonication of ZnO suspension.

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