Selective Deposition of Thin Copper Films onto Silicon with Improved Adhesion

L. Magagnin; R. Maboudian; C. Carraro

doi:10.1149/1.1344280

Selective Deposition of Thin Copper Films onto Silicon with Improved Adhesion

Electrochemical and Solid-State Letters ◽

10.1149/1.1344280 ◽

2001 ◽

Vol 4 (1) ◽

pp. C5 ◽

Cited By ~ 47

Author(s):

L. Magagnin ◽

R. Maboudian ◽

C. Carraro

Keyword(s):

Copper Films ◽

Selective Deposition

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Surface and Reactor Effects on Selective Copper Deposition from Cu(hfac)tmvs

MRS Proceedings ◽

10.1557/proc-282-347 ◽

1992 ◽

Vol 282 ◽

Cited By ~ 7

Author(s):

John A. T. Norman ◽

David A. Roberts ◽

Arthur K. Hochberg

Keyword(s):

Copper Deposition ◽

Copper Films ◽

Selective Deposition ◽

Liquid Precursor ◽

Volatile Liquid

ABSTRACTThe selectivity of OMCVD copper films grown at 160°C/500 mTorr from the volatile liquid precursor Cu(hfac)tmvs was evaluated for various commercial 6” wafers patterned with either TiN/SiO2 or TiN/Si3N4. By processing wafers “as received”, only thermal grown SiO2 consistently resisted metallization, allowing copper films up to 1.5μ thick to be grown on TiN. For SiO2, films containing H2O, especially from PECVD, only blanket deposition was observed. However, by a utilizing simple thermal predeposition dehydration some of these SiO2 films were conditioned to give selective deposition.

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Selective deposition of conductive copper films on glass surfaces using femtosecond laser surface modification and electroless plating

10.1117/12.754877 ◽

2007 ◽

Author(s):

Jian Xu ◽

Yang Liao ◽

Huidan Zeng ◽

Zenghui Zhou ◽

Haiyi Sun ◽

...

Keyword(s):

Surface Modification ◽

Femtosecond Laser ◽

Electroless Plating ◽

Laser Surface ◽

Copper Films ◽

Selective Deposition ◽

Laser Surface Modification ◽

Glass Surfaces

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ChemInform Abstract: Selective Deposition of Thin Copper Films onto Silicon with Improved Adhesion.

ChemInform ◽

10.1002/chin.200117223 ◽

2001 ◽

Vol 32 (17) ◽

pp. no-no

Author(s):

L. Magagnin ◽

R. Maboudian ◽

C. Carraro

Keyword(s):

Copper Films ◽

Selective Deposition

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Selective deposition of silver and copper films by condensation coefficient modulation

Materials Horizons ◽

10.1039/c9mh00842j ◽

2020 ◽

Vol 7 (1) ◽

pp. 143-148 ◽

Cited By ~ 3

Author(s):

Silvia Varagnolo ◽

Jaemin Lee ◽

Houari Amari ◽

Ross A. Hatton

Keyword(s):

Metal Removal ◽

Copper Films ◽

Condensation Coefficient ◽

Selective Deposition ◽

Metal Vapour ◽

Vapour Condensation

Patterning evaporated silver and copper films without metal removal using extremely thin printed organofluorine films to modulate metal vapour condensation.

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N-Heterocyclic carbene and thiol micropatterns enable the selective deposition and transfer of copper films

Chemical Communications ◽

10.1039/c9cc08919e ◽

2020 ◽

Vol 56 (8) ◽

pp. 1275-1278 ◽

Cited By ~ 1

Author(s):

Zhe She ◽

Mina R. Narouz ◽

Christene A. Smith ◽

Amy MacLean ◽

Hans-Peter Loock ◽

...

Keyword(s):

Copper Films ◽

Selective Deposition ◽

Micro Structures ◽

Electrochemical Fabrication

Creating N-heterocyclic carbene and thiol micropatterns for electrochemical fabrication of copper micro-structures.

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Effect of the Microstructure of Copper Films on the Damping of Oscillating Quartz Resonators*

Zeitschrift für Physikalische Chemie ◽

10.1524/zpch.1997.1.1.225 ◽

1997 ◽

Vol 1 (1) ◽

pp. 225-238

Author(s):

M. Wünsche ◽

H. Meyer ◽

R. Schumacher ◽

S. Wasle ◽

K. Doblhofer

Keyword(s):

Copper Films ◽

Quartz Resonators

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Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

MRS Proceedings ◽

10.1557/proc-766-e3.8 ◽

2003 ◽

Vol 766 ◽

Author(s):

Kosuke Takenaka ◽

Masao Onishi ◽

Manabu Takenshita ◽

Toshio Kinoshita ◽

Kazunori Koga ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Deposition Rate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Anisotropic Plasma ◽

Bottom Surface ◽

Chemical Vapor Deposition Method ◽

Copper Films ◽

Deposition Method ◽

Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

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