Effect of Glass Substrate on the Film Properties of Poly Silicon by Excimer Laser Annealing

2020 ◽  
Vol 98 (7) ◽  
pp. 109-115
Author(s):  
Bin Zhu ◽  
Rajesh Vaddi ◽  
Ming-Huang Huang ◽  
Hoon Kim ◽  
Robert G. Manley
Keyword(s):  
Excimer Laser ◽  
Glass Substrate ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Film Properties ◽  
Poly Silicon

Effect of Glass Substrate on the Film Properties of Poly Silicon by Excimer Laser Annealing

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1933-1933
Author(s):  
Bin Zhu ◽  
Rajesh Vaddi ◽  
Ming-Huang Huang ◽  
Hoon Kim ◽  
Robert G. Manley
Keyword(s):  
Excimer Laser ◽  
Glass Substrate ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Film Properties ◽  
Poly Silicon

Poly-Silicon Thin-Film Transistors with Uniform Performance Fabricated by Excimer Laser Annealing

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 474-481 ◽  
Author(s):  
Ichirou Asai ◽  
Noriji Kato ◽  
Mario Fuse ◽  
Toshihisa Hamano
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Poly Silicon

Experimental Analysis for Low-Temperature Poly-Si Films Produced by Using the Excimer Laser Annealing Method

2006 ◽  
Vol 505-507 ◽  
pp. 277-282 ◽  
Author(s):  
Yu Ru Chen ◽  
Long Sun Chao
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Glass Substrate ◽  
Laser Annealing ◽  
Pulse Number ◽  
Sio2 Layer ◽  
Excimer Laser Annealing ◽  
Melt Pool ◽  
Si Films ◽  
Annealing Method

This paper is to investigate the effects on grain size of different working conditions for making poly Si films by using the excimer laser annealing method. In this research, a KrF excimer laser of 248 nm in wavelength is used to irradiate a-Si films of 0.1 μm in thickness on glass substrate to produce poly-Si ones. The control parameters are laser intensity (200~500 mJ/cm2), pulse number (1~10 shots) and coverage fraction (0~100%). Besides, the effect of a SiO2 layer is also studied, which is utilized as a heat-isolated zone located between the Si film and glass substrate. Average grain sizes from SEM photos are used to analyze the effects of these parameters. Purely from the heat transfer view, the Si film obtains more energy would have the slower cooling or solidification rate, which results in the larger grain. From the experimental results, if the melt pool is within the range of Si film or does not contact its neighboring layer (SiO2 layer or glass substrate), the more absorbed energy from the higher energy intensity, the larger pulse number or the bigger coverage fraction can have the larger average grain size. However, with large enough energy, the melt pool could go through the Si film and touch the lower layer. This would induce much more nuclei due to the homogeneous nucleation in the pool and the heterogeneous nucleation near the interface between the film and the neighboring layer. The resulting grain size is much smaller than that of the former one. The transition points of these two cases for different control parameters can be obtained from the experimental results in this study. When the energy from the laser is small, the SiO2 layer acts like a heat absorber and makes the grain size smaller than that of not having the SiO2 layer. On the other hand, when the energy is large, the SiO2 layer becomes a heat insulator and makes the grain size larger.

XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts

1986 ◽  
Vol 71 ◽  
Author(s):  
T. Sameshima ◽  
S. Usui
Keyword(s):  
Energy Density ◽  
Excimer Laser ◽  
Glass Substrate ◽  
Laser Annealing ◽  
Processing Temperature ◽  
Excimer Laser Annealing ◽  
Channel Mobility ◽  
First Time ◽  
Xecl Excimer Laser

AbstractMo-gate n-channel poly-Si TFTs have been fabricated for the first time at a low processing temperature of 26°C. 500 to 1000A thick a-Si:H was successfully crystallized by pulsed XeCl excimer laser (308nm) annealing without heating the glass substrate. The channel mobility of the TFT was 180 cm2/V.sec when the a-Si:H was annealed at energy density of 200 mJ/cm2.

Low-Temperature Poly-Si TFT by Excimer Laser Annealing

2001 ◽  
Vol 685 ◽  
Author(s):  
Tohru Nishibe
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Present State ◽  
Glass Substrate ◽  
Laser Annealing ◽  
Value Added ◽  
Gate Insulator ◽  
Excimer Laser Annealing ◽  
Low Temperature Process

AbstractPoly-Si TFT-LCD has begun its way to an advanced display by integrating the driver circuits onto the glass substrate. Improvement of poly-Si TFT is essential in order to achieve value-added display where circuits for various functions are integrated on one substrate. This report the concept of poly-Si TFT display from present state to future scope, and required technologies for each generation. It will also focus on technologies such as crystallization and gate insulator formation at low temperature process.

scholarly journals Characterization of Poly-Silicon Film Prepared by Excimer Laser Annealing.

Shinku ◽  
1998 ◽  
Vol 41 (9) ◽  
pp. 798-801 ◽  
Author(s):  
Naoto MATSUO ◽  
Yoichiro AYA ◽  
Takeshi KANAMORI ◽  
Tomoyuki NOUDA ◽  
Hiroki HAMADA ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Film ◽  
Excimer Laser Annealing ◽  
Poly Silicon

A Novel Method for Fabrication of Hyhdrogenated Amorphous Silicon and High Quality Poly-SI Films on the Same Substrate by Employing Excimer Laser

1997 ◽  
Vol 467 ◽  
Author(s):  
Kwon-Young Choi ◽  
Jong-Wook Lee ◽  
Hyoung-Bae Choi ◽  
Jae-Hong Jeon ◽  
Min-Koo Han ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Excimer Laser ◽  
Rapid Thermal Annealing ◽  
Hydrogen Content ◽  
Glass Substrate ◽  
Laser Annealing ◽  
High Mobility ◽  
Halogen Lamp ◽  
Physical Damage ◽  
Excimer Laser Annealing

ABSTRACTWe have fabricated the a-Si:H film for pixel region and poly-Si film for driver region on the same glass substrate by a rapid thermal process successfully. By employing the halogen lamp, the considerable amount of hydrogen in the PECVD a-Si:H film, which causes the undesirable film ablation due to hydrogen evolution during excimer laser annealing, could be reduced selectively in the peripheral driver area where the a-Si:H film is recrystallized into poly-Si film in order to obtain the high mobility. After rapid thermal annealing, the hydrogen content in a-Si:H films, of which the inherent hydrogen content was found to be about 10–12 at. %, is successfully reduced to less than 5 at. %. The annealing conditions for dehydrogenation are 500, 550, 600 and 650 °C with various halogen lamp irradiation period which are below the point of the glass shrinkage. It should be noted that after rapid thermal annealing, any physical damage in the glass substrate has not been observed.

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