Poly-Silicon Thin-Film Transistors with Uniform Performance Fabricated by Excimer Laser Annealing

Ichirou Asai; Noriji Kato; Mario Fuse; Toshihisa Hamano

doi:10.1143/jjap.32.474

Poly-Silicon Thin-Film Transistors with Uniform Performance Fabricated by Excimer Laser Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.474 ◽

1993 ◽

Vol 32 (Part 1, No. 1B) ◽

pp. 474-481 ◽

Cited By ~ 23

Author(s):

Ichirou Asai ◽

Noriji Kato ◽

Mario Fuse ◽

Toshihisa Hamano

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Silicon Thin Film ◽

Excimer Laser Annealing ◽

Poly Silicon

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Application of Excimer-Laser Annealing to Amorphous, Poly-Crystal and Single-Crystal Silicon Thin-Film Transistors

phys stat sol (a) ◽

10.1002/(sici)1521-396x(199804)166:2<715::aid-pssa715>3.0.co;2-l ◽

1998 ◽

Vol 166 (2) ◽

pp. 715-728 ◽

Cited By ~ 14

Author(s):

M. Matsumura

Keyword(s):

Thin Film ◽

Single Crystal ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Single Crystal Silicon ◽

Silicon Thin Film ◽

Excimer Laser Annealing ◽

Crystal Silicon

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On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l1775 ◽

1990 ◽

Vol 29 (Part 2, No. 10) ◽

pp. L1775-L1777 ◽

Cited By ~ 44

Author(s):

Kazuhiro Shimizu ◽

Osamu Sugiura ◽

Masakiyo Matsumura

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Silicon Thin Film ◽

Excimer Laser Annealing ◽

On Chip ◽

Bottom Gate

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Impact of AC Stress in Low Temperature Polycrystalline Silicon Thin Film Transistors Produced with Different Excimer Laser Annealing Energies

IEEE Electron Device Letters ◽

10.1109/led.2021.3073200 ◽

2021 ◽

pp. 1-1

Author(s):

Yu-Zhe Zheng ◽

Chia-Chuan Wu ◽

Po-Hsun Chen ◽

Ting-Chang Chang ◽

Kuan-Ju Zhou ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Excimer Laser ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Silicon Thin Film ◽

Excimer Laser Annealing

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Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors

Journal of Applied Physics ◽

10.1063/1.371409 ◽

1999 ◽

Vol 86 (8) ◽

pp. 4600-4606 ◽

Cited By ~ 70

Author(s):

C. T. Angelis ◽

C. A. Dimitriadis ◽

M. Miyasaka ◽

F. V. Farmakis ◽

G. Kamarinos ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Excimer Laser ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Silicon Thin Film ◽

Excimer Laser Annealing ◽

Structural And Electrical Properties

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Erratum: “Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors” [J. Appl. Phys. 86, 4600 (1999)]

Journal of Applied Physics ◽

10.1063/1.372060 ◽

2000 ◽

Vol 87 (3) ◽

pp. 1588-1588 ◽

Cited By ~ 2

Author(s):

C. T. Angelis ◽

C. A. Dimitriadis ◽

M. Miyasaka ◽

F. V. Farmakis ◽

G. Kamarinos ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Excimer Laser ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Silicon Thin Film ◽

Excimer Laser Annealing ◽

Structural And Electrical Properties

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Polycrystalline Silicon Thin Film Transistors Fabricated by Employing Selective Self Ion-Implantation and Excimer Laser Annealing

Journal of the Korean Physical Society ◽

10.3938/jkps.37.870 ◽

2000 ◽

Vol 37 (6) ◽

pp. 870 ◽

Cited By ~ 1

Author(s):

Lee Min-Cheol ◽

Jeon Jae-Hong ◽

Jung Sang-Hoon ◽

Han Min-Koo

Keyword(s):

Thin Film ◽

Ion Implantation ◽

Excimer Laser ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Silicon Thin Film ◽

Excimer Laser Annealing

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High-Performance Polycrystalline Silicon Thin-Film Transistors Fabricated by High-Temperature Process with Excimer Laser Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.3293 ◽

2004 ◽

Vol 43 (6A) ◽

pp. 3293-3296 ◽

Cited By ~ 16

Author(s):

Hiroaki Jiroku ◽

Mitsutoshi Miyasaka ◽

Satoshi Inoue ◽

Yoshifumi Tsunekawa ◽

Tatsuya Shimoda

Keyword(s):

Thin Film ◽

High Temperature ◽

Excimer Laser ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Laser Annealing ◽

Silicon Thin Film ◽

Excimer Laser Annealing ◽

High Temperature Process

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High-Performance Self-Aligned Bottom-Gate Low-Temperature Poly-Silicon Thin-Film Transistors With Excimer Laser Crystallization

IEEE Electron Device Letters ◽

10.1109/led.2007.899326 ◽

2007 ◽

Vol 28 (7) ◽

pp. 599-602 ◽

Cited By ~ 24

Author(s):

Chun-Chien Tsai ◽

Hsu-Hsin Chen ◽

Bo-Ting Chen ◽

Huang-Chung Cheng

Keyword(s):

Thin Film ◽

Low Temperature ◽

Excimer Laser ◽

Thin Film Transistors ◽

High Performance ◽

Laser Crystallization ◽

Silicon Thin Film ◽

Poly Silicon ◽

Excimer Laser Crystallization ◽

Bottom Gate

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Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH4- and Si2H6- Source Low Pressure Vapor Deposited a-Si Films with or without Solid-Phase Crystallization

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.37-38.565 ◽

1994 ◽

Vol 37-38 ◽

pp. 565-570 ◽

Cited By ~ 1

Author(s):

M. Fuse ◽

I. Asai ◽

M. Hirota ◽

Yoshinari Miyamoto

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Solid Phase ◽

Low Pressure ◽

Excimer Laser Annealing ◽

Solid Phase Crystallization ◽

Si Films ◽

Si Thin Film

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Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.2092 ◽

1994 ◽

Vol 33 (Part 1, No. 4A) ◽

pp. 2092-2099 ◽

Cited By ~ 13

Author(s):

Genshiro Kawachi ◽

Takashi Aoyama ◽

Akio Mimura ◽

Nobutake Konishi

Keyword(s):

Thin Film ◽

Low Temperature ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Ion Doping ◽

Si Thin Film

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