Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration

2020 ◽  
Vol 98 (4) ◽  
pp. 157-166
Author(s):  
Roger Loo ◽  
Anne Jourdain ◽  
Gianluca Rengo ◽  
Clement Porret ◽  
Andriy Yakovitch Hikavyy ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Device Integration ◽  
Etch Stop ◽  
Etch Stop Layer

Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration

2020 ◽  
Vol MA2020-02 (22) ◽  
pp. 1640-1640
Author(s):  
Roger Loo ◽  
Anne Jourdain ◽  
Gianluca Rengo ◽  
Clement Porret ◽  
Andriy Yakovitch Hikavyy ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Device Integration ◽  
Etch Stop ◽  
Etch Stop Layer

Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration

2021 ◽  
Author(s):  
Roger Loo ◽  
Anne Jourdain ◽  
Gianluca Rengo ◽  
Clement Porret ◽  
Andriy Hikavyy ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Device Integration ◽  
Etch Stop ◽  
Etch Stop Layer

Thin Single Crystal Silicon on Oxide by Lateral Solid Phase Epitaxy of Amorphous Silicon and Silicon Germanium

2000 ◽  
Vol 609 ◽  
Author(s):  
Brian J. Greene ◽  
Joseph Valentino ◽  
Judy L. Hoyt ◽  
James F. Gibbons
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Single Crystal Silicon ◽  
Selective Etching ◽  
Lateral Growth ◽  
Crystal Silicon ◽  
Etch Stop ◽  
Etch Stop Layer

ABSTRACTThe fabrication of 250 Å thick, undoped, single crystal silicon on insulator by lateral solid phase epitaxial growth from amorphous silicon on oxide patterned (001) silicon substrates is reported. Amorphous silicon was grown by low pressure chemical vapor deposition at 525°C using disilane. Annealing at temperatures between 540 and 570°C is used to accomplish the lateral epitaxial growth. The process makes use of a Si/Si1-xGex/Si stacked structure and selective etching. The thin Si1-xGex etch stop layer (x=0.2) is deposited in the amorphous phase and crystallized simultaneously with the Si layers. The lateral growth distance of the epitaxial region was 2.5 μm from the substrate seed window. This represents a final lateral to vertical aspect ratio of 100:1 for the single crystal silicon over oxide regions after selective etching of the top sacrificial Si layer. The effects of Ge incorporation on the lateral epitaxial growth process are also discussed. The lateral epitaxial growth rate of 20% Ge alloys is enhanced by roughly a factor of three compared to the rate of Si films at an anneal temperature of 555°C. Increased random nucleation rates associated with Ge alloy films are shown to be an important consideration when employing Si1-xGex to enhance lateral growth or as an etch stop layer.

MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage HEMT Applications

2003 ◽  
Vol 799 ◽  
Author(s):  
Haruki Yokoyama ◽  
Hiroki Sugiyama ◽  
Yasuhiro Oda ◽  
Michio Sato ◽  
Noriyuki Watanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Group V ◽  
Group Iii ◽  
Mocvd Growth ◽  
Order Of Magnitude ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Inp Substrates

ABSTRACTThis paper studies the decomposition characteristic of group-III sources during InAlAsSb growth on InP substrates by metalorganic chemical vapor deposition (MOCVD) using trimethylindium (TMI), trimethylaluminum (TMA), trimethylantimony (TMSb) and arsine (AsH3). A composition analysis of InAlAsSb layers shows that the group-III compositions in the InAlAsSb layer change remarkably when the flow rate of the group-V source is varied. To clarify the reason for this phenomenon, the growth rates of InAsSb and AlAsSb component are examined. Their changes indicate that TMSb suppresses the decomposition of TMA while AsH3 enhances it. Moreover, the HEMT structure with InP/InAlAsSb Schottky barrier layer, whose InP layer acts as a recess-etch-stop layer, is fabricated for the first time. The I-V characteristics of a fabricated Schottky barrier diode indicate that the reverse leakage current of InP/InAlAsSb is about one order of magnitude smaller than that of commonly used InP/InAlAs.

scholarly journals Maskless lithography using silicon oxide etch-stop layer induced by megahertz repetition femtosecond laser pulses

2011 ◽  
Vol 19 (11) ◽  
pp. 10834 ◽  
Author(s):  
Amirkianoosh Kiani ◽  
Krishnan Venkatakrishnan ◽  
Bo Tan ◽  
Venkat Venkataramanan
Keyword(s):  
Femtosecond Laser ◽  
Silicon Oxide ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Maskless Lithography ◽  
Etch Stop ◽  
Etch Stop Layer

Optimisation of a Pre-Metal-Dielectric with a contact etch stop layer for 0.18um and 0.13um technologies

2000 ◽  
Author(s):  
B. De Jaeger ◽  
G. Van den bosch ◽  
M. Van Hove ◽  
I. Debusschere ◽  
M. Schaekers ◽  
...  
Keyword(s):  
Etch Stop ◽  
Etch Stop Layer

Impact of TaN as Wet Etch Stop Layer on Device Characteristics for Dual-Metal HKMG Last Integration CMOSFETs

2013 ◽  
Vol 34 (12) ◽  
pp. 1488-1490 ◽  
Author(s):  
Zhaoyun Tang ◽  
Jing Xu ◽  
Hong Yang ◽  
Hushan Cui ◽  
Bo Tang ◽  
...  
Keyword(s):  
Etch Stop ◽  
Etch Stop Layer ◽  
Dual Metal ◽  
Wet Etch

GaSb-Based Mid-Infrared Single Lateral Mode Lasers Fabricated by Selective Wet Etching Technique with an Etch Stop Layer

2012 ◽  
Vol 41 (5) ◽  
pp. 899-904 ◽  
Author(s):  
Seungyong Jung ◽  
Gela Kipshidze ◽  
Rui Liang ◽  
Sergey Suchalkin ◽  
Leon Shterengas ◽  
...  
Keyword(s):  
Wet Etching ◽  
Etching Technique ◽  
Mid Infrared ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Lateral Mode

Performance and Interface Characterization for Contact Etch Stop Layer–Strained nMOSFET with HfO[sub 2] Gate Dielectrics under Pulsed-IV Measurement

2008 ◽  
Vol 11 (8) ◽  
pp. H230 ◽  
Author(s):  
Woei-Cherng Wu ◽  
Tien-Sheng Chao ◽  
Te-Hsin Chiu ◽  
Jer-Chyi Wang ◽  
Chao-Sung Lai ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Interface Characterization ◽  
Etch Stop ◽  
Etch Stop Layer

Selective etching of GaAs grown over AlAs etch-stop layer in buffered citric acid/H 2 O 2 solution

2017 ◽  
Vol 63 ◽  
pp. 52-57 ◽  
Author(s):  
A. Kuźmicz ◽  
K. Chmielewski ◽  
O. Serebrennikova ◽  
J. Muszalski
Keyword(s):  
Citric Acid ◽  
Selective Etching ◽  
Etch Stop ◽  
Etch Stop Layer
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