(Invited) Axial Silicon-Germanium Nanowires: Properties and Device Applications

2020 ◽  
Vol 98 (2) ◽  
pp. 13-28
Author(s):  
Leonid Tsybeskov ◽  
Theodore I Kamins ◽  
Xiaohua Wu ◽  
David J. Lockwood
Keyword(s):  
Silicon Germanium ◽  
Germanium Nanowires ◽  
Device Applications

(Invited) Axial Silicon-Germanium Nanowires: Properties and Device Applications

2020 ◽  
Vol MA2020-02 (10) ◽  
pp. 1196-1196
Author(s):  
Leonid Tsybeskov ◽  
Theodore I Kamins ◽  
Xiaohua Wu ◽  
David J. Lockwood
Keyword(s):  
Silicon Germanium ◽  
Germanium Nanowires ◽  
Device Applications

Tailoring thermal conductivity of silicon/germanium nanowires utilizing core-shell architecture

2016 ◽  
Vol 119 (15) ◽  
pp. 155101 ◽  
Author(s):  
S. Sarikurt ◽  
A. Ozden ◽  
A. Kandemir ◽  
C. Sevik ◽  
A. Kinaci ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Germanium ◽  
Core Shell ◽  
Germanium Nanowires

Composition and Size Effects on the Optical Properties of Isolated Silicon-Germanium Nanowires

2012 ◽  
Vol 1408 ◽  
Author(s):  
Houssem Kallel ◽  
Abdallah Chehaidar ◽  
Arnaud Arbouet ◽  
Thierry Baron ◽  
Alexis Potié ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Germanium ◽  
Size Effects ◽  
Numerical Study ◽  
Mie Theory ◽  
Light Polarization ◽  
Angle Of Incidence ◽  
Nanowire Diameter ◽  
Germanium Nanowires ◽  
Silicon And Germanium

ABSTRACTSilicon and Germanium nanowires (NWs) have shown a strong ability to enhance both the absorption and scattering of light. Tailoring the optical properties of Si or Ge NWs can be obtained by adjusting the nanowire diameter. Another parameter that can be used is the chemical composition of silicon-germanium (Si1-xGex-NWs) alloys. In this work, we perform a numerical study on the optical properties of single Si1-xGex-NWs based on the Lorenz-Mie theory. The effects of Ge composition, light polarization and angle of incidence on the nanowire optical properties are investigated.

Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon–germanium nanowires

2010 ◽  
Vol 108 (2) ◽  
pp. 024312 ◽  
Author(s):  
Hock-Chun Chin ◽  
Xiao Gong ◽  
Tien Khee Ng ◽  
Wan Khai Loke ◽  
Choun Pei Wong ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Silicon Germanium ◽  
Germanium Nanowires

STRAINED SILICON GERMANIUM HETEROSTRUCTURES FOR DEVICE APPLICATIONS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4189-4194 ◽  
Author(s):  
E. KASPER
Keyword(s):  
Silicon Germanium ◽  
Elastic Strain ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Critical Thickness ◽  
Type Ii ◽  
Material Development ◽  
Device Applications ◽  
Effect Transistor ◽  
Key Questions

Silicon Germanium is lattice mismatched to Silicon by up to 4.2% depending on the Ge content. Up to a critical thickness elastic strain accommodates the mismatch. The band ordering of SiGe/Si interfaces is strongly influenced by the strain shifting the band ordering from flat conduction band to a type II ordering when proper strain adjustment is performed. As device examples the heterobipolartransistor, hetero field effect transistor and room temperature Esaki tunneling are treated. As key questions for further material development are identified the growth and processing of ultrametastable layers and the strain adjustment by thin virtual substrates.

The Significance of Charged Defects in Understanding the Light-Induced Degradation of Hydrogenated Amorphous Silicon-Germanium Alloys

1997 ◽  
Vol 467 ◽  
Author(s):  
Chih-Chiang Chen ◽  
Fan Zhong ◽  
J. David Cohen
Keyword(s):  
Glow Discharge ◽  
Silicon Germanium ◽  
Light Exposure ◽  
Optical Transition ◽  
Dominant Role ◽  
Hole Mobility ◽  
Thermally Induced ◽  
Device Applications ◽  
P Type ◽  
Charged Defects

ABSTRACTWe have characterized the defect state structure in a series of device quality glow discharge intrinsic, n-type doped, and p-type doped a-Si,Ge:H alloys with Ge content ranging from 20 at.% to 35 at.%. Our experimental methods include capacitance profiling, transient junction photocurrent and photocapacitance measurements. These methods have allowed us to identify one type of thermally induced defect transition plus two types of optical transitions from deep defects. Our results indicate that these transitions must involve at least two distinct defect sub-bands. Comparison of the magnitudes of these sub-bandsfor the intrinsic, n-type, and p-type alloys has allowed us to confirm that one of the optical transition belongs to D+ defect sub-band. All the optically and thermally induced bands of defect transitions are present with similar magnitudes for the most intrinsic a-Si,Ge:H alloys, which implies that charged defects play a significant role in glow discharge a-Si,Ge:H alloys. We then examined the changes in these defect densities, along with the changes in the hole mobility-lifetime products, that result from prolonged light exposure. By comparing the annealed state and light soaked state of each sample, we have been able to correlate the relative changes of the identified defect sub-band with the measured hole mobility-lifetime products. These data indicate that charged defects probably play a dominant role in determining the degradation of these a-Si,Ge:H alloys in device applications.

The impact of erbium incorporation on the structure and photophysics of silicon–germanium nanowires

Nanoscale ◽  
2010 ◽  
Vol 2 (12) ◽  
pp. 2657 ◽  
Author(s):  
Ji Wu ◽  
Monika Wieligor ◽  
T. Waldek Zerda ◽  
Jeffery L. Coffer
Keyword(s):  
Silicon Germanium ◽  
Germanium Nanowires ◽  
The Impact

Silicon–Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications

2013 ◽  
Vol 114 (2) ◽  
pp. 1371-1412 ◽  
Author(s):  
Michele Amato ◽  
Maurizia Palummo ◽  
Riccardo Rurali ◽  
Stefano Ossicini
Keyword(s):  
Silicon Germanium ◽  
Basic Principles ◽  
Germanium Nanowires ◽  
Advanced Applications

TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES

2004 ◽  
Vol 03 (01n02) ◽  
pp. 171-176
Author(s):  
J. KOLODZEY ◽  
T. N. ADAM ◽  
R. T. TROEGER ◽  
P.-C. LV ◽  
S. K. RAY ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Heavy Hole ◽  
State Transitions ◽  
Intersubband Transitions ◽  
Boron Doped ◽  
Different Types ◽  
Device Applications ◽  
Dopant Atoms

Terahertz (THz) electroluminescence was produced by three different types of sources: intersubband transitions in silicon germanium quantum wells, resonant state transitions in boron-doped strained silicon germanium layers, and hydrogenic transitions from dopant atoms in silicon. The devices were grown by molecular beam epitaxy, fabricated by dry etching, and characterized by infrared spectroscopy. The absorption of THz was observed in silicon germanium quantum wells at energies corresponding to heavy hole and light hole intersubband transitions. These results suggest that SiGe nanotechnology is attractive for THz device applications.

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