(Invited) Gate-All-Around Nanosheet Field-Effect Transistors for Advanced Logic and Memory Applications: Integration and Device Features

2020 ◽  
Vol 97 (1) ◽  
pp. 23-33
Author(s):  
Anabela Veloso ◽  
Philippe Matagne ◽  
Geert Eneman ◽  
Hans Mertens ◽  
Adrian Chasin ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Applications Integration ◽  
Memory Applications

(Invited) Gate-All-Around Nanosheet Field-Effect Transistors for Advanced Logic and Memory Applications: Integration and Device Features

2020 ◽  
Vol MA2020-01 (15) ◽  
pp. 1037-1037
Author(s):  
Anabela Veloso ◽  
Philippe Matagne ◽  
Geert Eneman ◽  
Hans Mertens ◽  
Adrian Chasin ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Applications Integration ◽  
Memory Applications

scholarly journals Application of organic field-effect transistors in memory

2020 ◽  
Vol 4 (10) ◽  
pp. 2845-2862
Author(s):  
Zhiheng Zhu ◽  
Yunlong Guo ◽  
Yunqi Liu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Function ◽  
Organic Field Effect Transistors ◽  
Memory Mechanism ◽  
Memory Applications ◽  
With Memory

Functional organic field-effect transistors (OFETs) have developed rapidly, especially OFETs with memory function. We make a comprehensive summary of the background, memory mechanism, structure construction and memory applications based on OFETs.

Ferroelectric Field Effect Transistors for Memory Applications

2010 ◽  
Vol 22 (26-27) ◽  
pp. 2957-2961 ◽  
Author(s):  
Jason Hoffman ◽  
Xiao Pan ◽  
James W. Reiner ◽  
Fred J. Walker ◽  
J. P. Han ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Applications

scholarly journals Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

Materials ◽  
2020 ◽  
Vol 13 (13) ◽  
pp. 2896 ◽  
Author(s):  
Xinnan Huang ◽  
Yao Yao ◽  
Songang Peng ◽  
Dayong Zhang ◽  
Jingyuan Shi ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Trapping ◽  
Interface States ◽  
Subthreshold Swing ◽  
Level Shift ◽  
Voltage Sweep ◽  
The Stability ◽  
Memory Applications

The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS2 field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different from other reported MoS2 FETs whose SS is almost constant while varying gate voltage sweep range. This anomalous SS enlargement can be attributed to interface states at the MoS2–SiO2 interface. Moreover, a deviation of SS from its linear relationship with temperature is found. We relate this deviation to two main reasons, the energetic distribution of interface states and Fermi level shift originated from the thermal activation. Our study may be helpful for the future modification of the MoS2 FET that is applied in the low power consumption devices and circuits.

Ferroelectric field-effect transistors for logic and in-situ memory applications

2020 ◽  
Vol 31 (42) ◽  
pp. 424007
Author(s):  
Lan Liu ◽  
Xiang Hou ◽  
Heng Zhang ◽  
Jianlu Wang ◽  
Peng Zhou
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Applications
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