Comparing Different Cross-Section Cutting Methods for SEM Analysis of Membrane-Electrodes Assemblies

2019 ◽  
Vol 92 (8) ◽  
pp. 87-94 ◽  
Author(s):  
Susana Merino ◽  
Carlos Novillo ◽  
Gonzalo de Diego ◽  
Julio J Conde ◽  
María Antonia Folgado ◽  
...  
Keyword(s):  
Cross Section ◽  
Sem Analysis ◽  
Membrane Electrodes

A technique for preparing semiconductor cross sections for both TEM and SEM analysis

1989 ◽  
Vol 47 ◽  
pp. 712-713
Author(s):  
Stanley J. Klepeis ◽  
J.P. Benedict ◽  
R.M Anderson
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Cross Sections ◽  
Sem Analysis ◽  
Preparation Technique ◽  
Ion Milling ◽  
Tem Analysis ◽  
Polished Cross Section ◽  
Area Of Interest ◽  
Polished Side

The ability to prepare a cross-section of a specific semiconductor structure for both SEM and TEM analysis is vital in characterizing the smaller, more complex devices that are now being designed and manufactured. In the past, a unique sample was prepared for either SEM or TEM analysis of a structure. In choosing to do SEM, valuable and unique information was lost to TEM analysis. An alternative, the SEM examination of thinned TEM samples, was frequently made difficult by topographical artifacts introduced by mechanical polishing and lengthy ion-milling. Thus, the need to produce a TEM sample from a unique,cross-sectioned SEM sample has produced this sample preparation technique.The technique is divided into an SEM and a TEM sample preparation phase. The first four steps in the SEM phase: bulk reduction, cleaning, gluing and trimming produces a reinforced sample with the area of interest in the center of the sample. This sample is then mounted on a special SEM stud. The stud is inserted into an L-shaped holder and this holder is attached to the Klepeis polisher (see figs. 1 and 2). An SEM cross-section of the sample is then prepared by mechanically polishing the sample to the area of interest using the Klepeis polisher. The polished cross-section is cleaned and the SEM stud with the attached sample, is removed from the L-shaped holder. The stud is then inserted into the ion-miller and the sample is briefly milled (less than 2 minutes) on the polished side. The sample on the stud may then be carbon coated and placed in the SEM for analysis.

Evaluation of Cu/Sn-Cu Bump Bonding Processes for 3D Integration Using a Fluxing Adhesive

2010 ◽  
Vol 7 (3) ◽  
pp. 143-145 ◽  
Author(s):  
Alan Huffman ◽  
Christopher Gregory ◽  
Matthew Lueck ◽  
Jason Reed ◽  
Dorota Temple ◽  
...  
Keyword(s):  
Mechanical Strength ◽  
Environmental Protection ◽  
Cross Section ◽  
Sem Analysis ◽  
Electrical Measurements ◽  
3D Integration ◽  
Test Vehicle ◽  
Area Array ◽  
Underfill Material

We present the results of a study to evaluate the use of a fluxing adhesive developed by LORD Corp. in the bonding of Cu/Sn-Cu bump structures for interconnection in 3D integration structures. Using an area-array daisy chain test vehicle with a bump pitch of 25 μm, samples are prepared using our standard bonding methodology and also with the fluxing adhesive and then evaluated through electrical measurements and cross section SEM analysis. The results show that the use of the fluxing underfill material results in a well-formed bond between the Cu and Cu/Sn bumps and encapsulates the interconnects to provide environmental protection and additional mechanical strength to the interconnect array.

Advanced Planarized Aluminum Metallization Process

1992 ◽  
Vol 260 ◽  
Author(s):  
F. S. Chen ◽  
G. A. Durit ◽  
J. W. Staman ◽  
C. C. Wei ◽  
F. T. Liou
Keyword(s):  
Integrated Circuits ◽  
Cross Section ◽  
Sem Analysis ◽  
Prior History ◽  
Preparation Methods ◽  
Attractive Option ◽  
Aluminum Metallization ◽  
Backscattered Electron ◽  
Electron Imaging ◽  
Metallization Process

ABSTRACTSputtered aluminum has been used for interconnection in integrated circuits because of its low resistivity. However conventional sputtered aluminum has two important drawbacks, poor step coverage and poor planarization, which make it unsuitable for eubmicron multi-level interconnect process. CVD tungsten is an attractive option for forming plugs and interconnects but suffers several drawbacks. It is therefore preferable to use aluminum for both plugs and interconnections due to its simplicity and established prior history. We have developed a fully planarieed aluminum metallization process which produces void free contact plugs.In order to verify the filling of the contact plugs, we have carried out extensive SEM analysis using secondary electron and backscattered electron imaging methods with various SEM sample preparation methods, i.e. chemical etching to extract the metal plug without inducing any damage to the metal, SEM cross section prepared with some oxide (about 1000Å) left in front of the metal plug and standard SEM cross section through the metal plug. Complementary secondary and backscattered imaging has proven to be a reliable method for ascessing the filling of the contact holes. Wafer and package level reliability data for the planarized aluminum metallization used on a megabit device will also be presented.

Excimer laser-assisted etching of polysilicon at 193 nm

1987 ◽  
Vol 2 (6) ◽  
pp. 895-901 ◽  
Author(s):  
M. D. Armacost ◽  
S. V. Babu ◽  
S. V. Nguyen ◽  
J. F. Rembetski
Keyword(s):  
Gas Phase ◽  
Excimer Laser ◽  
Cross Section ◽  
Thermal Effects ◽  
Etch Rate ◽  
Sem Analysis ◽  
Surface Roughening ◽  
193 Nm ◽  
Limiting Value ◽  
Scanning Electron

Excimer laser-assisted etching of polysilicon at 193 nm was studied in the presence of CF3Br, CF2Cl2, and NF3. In the presence of 193 nm radiation, CF3Br showed some propensity to etch polysilicon, while CF2Cl2 did not show any appreciable etching. In the presence of NF3, maximum etch rates of 0.6 Å/pulse were obtained for pressures greater than 500 Torr and fluences exceeding 200 mJ/(cm2 pulse). The etch rate increased with both fluences and pressure to a limiting value of 0.6 Å/pulse. An adsorptive etch mechanism was proposed, where NF3 molecules diffuse to the surface, adsorb, and then react after absorbing laser radiation. Thermal effects enhance this process and appear to dominate at lower pressures (<400 Torr) and higher fluences. Etching caused by the gas phase formation of F atoms is minimal due to the low absorption cross section of NF3 at 193 nm. Etching of submicron profiles in polysilicon was also examined. Polysilicon samples masked by patterned SiO2 were exposed to NF3 and 193 nm ArF radiation. Subsequent scanning electron microscopy (SEM) analysis demonstrated directional etching with some surface roughening.

A Procedure for Cross Sectioning Specific Semiconductor Devices for Both SEM and TEM Analysis

1990 ◽  
Vol 199 ◽  
Author(s):  
J. P. Benedict ◽  
Ron Anderson ◽  
S. J. Klepeis ◽  
M. Chaker
Keyword(s):  
Cross Section ◽  
Semiconductor Devices ◽  
Sem Analysis ◽  
Total Thickness ◽  
Ion Milling ◽  
Tem Analysis ◽  
Plan View ◽  
Positive Side ◽  
Sem And Tem

ABSTRACTThe procedures described in this paper allow both SEM and TEM analysis to be performed on the same, device specific, semiconductor cross section. In order to accomplish this, a number of tools and fixtures have been constructed that allow the user to polish into the sample to a predetermined plane-of-polish, bisecting the device or feature of interest for SEM analysis. After SEM examination, the specimen is prepared for TEM analysis by first affixing a grid to the just-examined surface, inverting the specimen and parallel-polishing the backside of the specimen until the specimen's total thickness is in the 0.5 to 1.0μm range using the described tools. A subsequent one to ten minute ion milling step cleans the specimen. A very considerable positive side-effectof this method is the nearelimination of artifacts arisingfrom the use of strong chemicals and lengthy ion milling. The method has been extended to the preparation of plan-view device samples and non-semiconductor specimens.

scholarly journals Growth Law For Peritectic Phases Formation In The Zinc Coating

2015 ◽  
Vol 60 (3) ◽  
pp. 2335-2340
Author(s):  
E. Guzik ◽  
D. Kopyciński ◽  
W. Wołczyński
Keyword(s):  
Cross Section ◽  
Stable Equilibrium ◽  
Zinc Coating ◽  
Sem Analysis ◽  
Peritectic Transformation ◽  
Layer Formation ◽  
Growth Laws ◽  
The Cross

Abstract Some experiments dealing with the isothermal hot dip galvanizing were carried out. The (Zn) – coating settled on the Armco-iron substrate were examined after arresting the solidification for different periods of time. The measurement of the thickness of each sub-layer in the coating were performed due to the SEM – analysis. The zinc segregation on the cross-section of the studied sub-layers were also determined by the EDS technique. The growth laws are formulated mathematically for each of the observed sub-layer. The mechanism of the sub-layer formation is also analysed due to the observation of the birth/nucleation of the phases in the sub-layers and the effect of flux onto the sub-layers morphology formation. The appearance of each phase is referred to the Fe-Zn diagram for stable equilibrium according to which these phases are the products of the adequate peritectic transformation.

SYNTHESIS, MECHANICAL AND ELECTRICAL PROPERTIES OF CARBON MICROCOILS AND NANOCOILS

2010 ◽  
Vol 03 (04) ◽  
pp. 263-267 ◽  
Author(s):  
HUI BI ◽  
KAICHANG KOU ◽  
YONGBAI YIN ◽  
KOSTYA (KEN) OSTRIKOV ◽  
ZONGWEN LIU
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Cross Section ◽  
Electrical Resistance ◽  
Emission Intensity ◽  
Sem Analysis ◽  
Mechanical And Electrical Properties ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Test Voltage

The results on the synthesis, mechanical and electrical properties of carbon microcoils and nanocoils (CMCs, CNCs) synthesized using catalytic CVD and Ni–P and Co–P catalyst alloys, respectively, are reported. SEM analysis reveals that the CMCs and CNCs have unique helical morphologies, and diameters of 5.0–9.0 μm and 450–550 nm, respectively. Moreover, CMCs with flat cross-section can be stretched to 3 times their original coil lengths. Current–voltage characteristics of a single microcoil have also been obtained. It is found that the CMCs have the electrical conductivity between 100 and 160 S/cm, whereas the electrical resistance increases by about 20% during the coil extension. Besides, the microcoils can produce light in vacuum when the test voltage reaches 10 V. The emission intensity increases as the voltage increases. The mechanical and electrical properties of CMCs and CNC make them potentially useful in many applications in micromagnetic sensors, mechanical microsprings and optoelectronics.

scholarly journals Efficiency of XP Endo Shaper (XPS) and Irrigation Protocol on the Quality of Cleaning the Apical Third of Root Canal: SEM Study

2019 ◽  
Vol 23 (1) ◽  
pp. 31-35
Author(s):  
Slavoljub Živković ◽  
Milica Jovanović-Medojević ◽  
Jelena Nešković ◽  
Marijana Popović Bajić ◽  
Marija Živković Sandić
Keyword(s):  
Cross Section ◽  
Root Canal ◽  
Sem Analysis ◽  
Smear Layer ◽  
Apical Segment ◽  
Continuous Irrigation ◽  
Sem Study ◽  
Intermittent Irrigation ◽  
Apical Area

SummaryBackground/Aim: The aim of this study was to evaluate the efficacy of new rotary NiTi instrument XP- endo SHAPER (XPS) used with two irrigation protocols on the root canal cleaning in the apical area.Material and Methods: The research was conducted on 30 single-rooted teeth extracted for orthodontic reasons which were divided into the two groups. Instrumentation of the canals was conducted with XPS instrument and 2% solution of NaOCl was used as irrigant. Instrumentation in the first group was performed using a conventional continuous irrigation, in the second group, protocol of final irrigation was performed intermittently in 3 cycles. The SEM analysis of the apical third of the canal was performed on longitudinal root cross-section standardized photomicrography with a magnification of 2000X.Results: Results showed that a thicker smear layer was observed in the first group and with continuous irrigation protocol (2,10) in relation to the intermittent irrigation protocol in 3 cycles (1,96), but without significant differences.The walls of the root canal in the apical third of the samples of the second group were slightly cleaner (73.3%) in comparison with the teeth of the first group (64, 7%), but also without significant differences.Conclusions: The use of XPS and 2% solution of NaOCl in the root canal enables efficient cleaning of the apical third of tooth. The final irrigation protocol in three cycles improves the efficiency of the smear layer removal in the apical segment of the canal.

scholarly journals Influence of Ultrasonic Activation on the Physicochemical Properties of Calcium Silicate-Based Cements

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Fredson Márcio Acris De Carvalho ◽  
Yara Teresinha Corrêa Silva-Sousa ◽  
Carlos Eduardo Saraiva Miranda ◽  
Paulo Henrique Miller Calderon ◽  
Ana Flávia Simões Barbosa ◽  
...  
Keyword(s):  
Physicochemical Properties ◽  
Cross Section ◽  
Calcium Ions ◽  
Calcium Release ◽  
External Surface ◽  
Setting Time ◽  
Dimensional Change ◽  
Sem Analysis ◽  
Ultrasonic Activation ◽  
Solubility Test

Purpose. To evaluate the influence of ultrasonic activation on the physicochemical properties of setting time (ST), flow (FL), dimensional change (DC), and solubility (SL) of the cements: MTA, MTA Repair HP, and Biodentine®. Materials and Methods. Two experimental groups were formed according to the cement activation protocol: without ultrasonic activation and with ultrasonic activation. Cements were manipulated according to the manufacturers’ instructions. Ultrasonic activation group was performed with an E1 insert at power 3 (24–32 kHz) for 30 s directly in the center of the cement mass. The molds for analysis of the physicochemical properties were filled out and evaluated according to specification No. 57 from ANSI/ADA. The results were analyzed using the ANOVA test (two-way), complemented by Tukey’s test (α = 0.05). The distilled water used during the solubility test was submitted to spectrometry to verify the release of calcium ions. The morphologies of the external surface and the cross-section of the samples were analyzed by means of a scanning electron microscope (SEM). Results. For the ST, ultrasonic activation reduced the values of MTA, MTA Repair HP, and Biodentine ( P < 0.05 ). For the FL, ultrasonic activation did not alter the flow of MTA ( P > 0.05 ); however, it increased the flow MTA Repair HP and Biodentine ( P < 0.05 ). For the DC, the percentage values of dimensional change were higher when there was ultrasonic activation in all repair cements ( P < 0.05 ). For SL, there was a reduction in the percentage of the values in MTA and MTA Repair HP ( P < 0.05 ); however, there was no change in the values of Biodentine ( P > 0.05 ). Ultrasonic activation favored the release of calcium ions from all cements. The SEM analysis showed, in general, that the ultrasonic activation reduced and altered the particle shape of the cement. Conclusions. The ultrasonic activation interfered in the ST, DC, FL, ultrastructural morphology, and calcium release of the repair cements. However, it did not affect the solubility of Biodentine®.

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