A Procedure for Cross Sectioning Specific Semiconductor Devices for Both SEM and TEM Analysis

1990 ◽  
Vol 199 ◽  
Author(s):  
J. P. Benedict ◽  
Ron Anderson ◽  
S. J. Klepeis ◽  
M. Chaker
Keyword(s):  
Cross Section ◽  
Semiconductor Devices ◽  
Sem Analysis ◽  
Total Thickness ◽  
Ion Milling ◽  
Tem Analysis ◽  
Plan View ◽  
Positive Side ◽  
Sem And Tem

ABSTRACTThe procedures described in this paper allow both SEM and TEM analysis to be performed on the same, device specific, semiconductor cross section. In order to accomplish this, a number of tools and fixtures have been constructed that allow the user to polish into the sample to a predetermined plane-of-polish, bisecting the device or feature of interest for SEM analysis. After SEM examination, the specimen is prepared for TEM analysis by first affixing a grid to the just-examined surface, inverting the specimen and parallel-polishing the backside of the specimen until the specimen's total thickness is in the 0.5 to 1.0μm range using the described tools. A subsequent one to ten minute ion milling step cleans the specimen. A very considerable positive side-effectof this method is the nearelimination of artifacts arisingfrom the use of strong chemicals and lengthy ion milling. The method has been extended to the preparation of plan-view device samples and non-semiconductor specimens.

A technique for preparing semiconductor cross sections for both TEM and SEM analysis

1989 ◽  
Vol 47 ◽  
pp. 712-713
Author(s):  
Stanley J. Klepeis ◽  
J.P. Benedict ◽  
R.M Anderson
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Cross Sections ◽  
Sem Analysis ◽  
Preparation Technique ◽  
Ion Milling ◽  
Tem Analysis ◽  
Polished Cross Section ◽  
Area Of Interest ◽  
Polished Side

The ability to prepare a cross-section of a specific semiconductor structure for both SEM and TEM analysis is vital in characterizing the smaller, more complex devices that are now being designed and manufactured. In the past, a unique sample was prepared for either SEM or TEM analysis of a structure. In choosing to do SEM, valuable and unique information was lost to TEM analysis. An alternative, the SEM examination of thinned TEM samples, was frequently made difficult by topographical artifacts introduced by mechanical polishing and lengthy ion-milling. Thus, the need to produce a TEM sample from a unique,cross-sectioned SEM sample has produced this sample preparation technique.The technique is divided into an SEM and a TEM sample preparation phase. The first four steps in the SEM phase: bulk reduction, cleaning, gluing and trimming produces a reinforced sample with the area of interest in the center of the sample. This sample is then mounted on a special SEM stud. The stud is inserted into an L-shaped holder and this holder is attached to the Klepeis polisher (see figs. 1 and 2). An SEM cross-section of the sample is then prepared by mechanically polishing the sample to the area of interest using the Klepeis polisher. The polished cross-section is cleaned and the SEM stud with the attached sample, is removed from the L-shaped holder. The stud is then inserted into the ion-miller and the sample is briefly milled (less than 2 minutes) on the polished side. The sample on the stud may then be carbon coated and placed in the SEM for analysis.

A Fast and Precise Specimen Preparation Technique for TEM Investigation of Prespecified Areas of Semiconductor Devices

1990 ◽  
Vol 199 ◽  
Author(s):  
Albert Romano ◽  
Jan Vanhellemont ◽  
Hugo Bender
Keyword(s):  
Cross Section ◽  
Semiconductor Devices ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Ion Milling ◽  
Special Equipment ◽  
Plan View

ABSTRACTIn this paper we present a rapid and highly precise plan view and cross-section specimen preparation technique for the localized thinning of semiconductor devices for TEM investigation. No special equipment except the commercially available one is required. Crosssection preparation takes about 6 hours, while plan view takes about 4 hours. Prespecified areas of 0.6 μm wide and 10 μm long can easily be thinned with transparency for CTEM and HREM. Using an iterative ion milling procedure allows to scan a complete device in HREM.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Two-Dimensional Modulated Interfacial Structures of Highly Epitaxial Ferromagnetic (La,Ca)MnO3 and Ferroelectric (Pb,Sr)TiO3 Thin Films on (001) MgO

2008 ◽  
Vol 3 ◽  
pp. 59-66 ◽  
Author(s):  
Jiechao Jiang ◽  
J. He ◽  
Efstathios I. Meletis ◽  
Jian Liu ◽  
Z. Yuan ◽  
...  
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Lattice Mismatch ◽  
Rock Type ◽  
Two Dimensional ◽  
Salt Rock ◽  
Double Diffraction ◽  
Tem Analysis ◽  
Plan View ◽  
Mgo Substrate

Two-dimensional in-plane interface structures of highly epitaxial perovskite (La,Ca)MnO3 (LCMO) and (Pb,Sr)TiO3 (PSTO) thin films on salt-rock type MgO substrate were studied using Transmission Electron Microscopy (TEM). Cross-section TEM studies revealed that both LCMO and PSTO films are good single crystal quality and have atomic sharp interface with respect to the MgO substrate with -6.4% and -6.2% lattice mismatch, respectively. Electron Diffraction Patterns (EDPs) of plan-view LCMO/MgO and PSTO/MgO interfaces exhibit double diffraction spots. An analytical approach was employed using double diffraction to study the two-dimensional in-plane interfaces of perovskite structure films on the salt-rock type substrate. The lattice mismatch near the interface regions was determined using EDPs of the plan-view interfaces and found to be -8.0% for LCMO/MgO and -7.14% for PSTO. Both latter values are larger than those obtained using cross-section TEM. Studies of the sharpness of double diffraction spots and plan-view high resolution (HR) TEM brought a conclusion that the PSTO film is well commensurate with the MgO substrate over large areas, whereas LCMO film is only locally commensurate with the substrate. These studies provide additional evidence to our previous observations that plan-view TEM of the interface is able to provide critical and valuable information that is lacking from the cross-section TEM analysis.

Domain Structure of Epitaxial SrRuO3 Thin Films on (001) LaA1O3

1998 ◽  
Vol 4 (S2) ◽  
pp. 578-579
Author(s):  
J. C. Jiang ◽  
X.Q. Pan ◽  
Q. Gan ◽  
C. B. Eom
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Cross Section ◽  
Ion Milling ◽  
Plan View ◽  
Face To Face ◽  
Electrical And Magnetic Properties ◽  
Device Applications ◽  
Ferroelectric Capacitors

Epitaxial thin film of SrRuO3 is very useful in device applications, due to its important electrical and magnetic properties. For example, (Pb,Zr)TiO3 ferroelectric capacitors with SrRuO3 thin film electrodes exhibit superior fatigue and leakage characteristics. Epitaxial SrRuO3 thin films grown on different substrates, such as on (001) SrTiO3 and (001) LaA1O3, have different magnetic properties, owing to the different microstructures in the film. Microstructures in epitaxial SrRuO3 thin films grown on (001) SrTiO3 have been studied in our previously work. In this paper, microstructure of epitaxial SrRu03 thin films grown on (001) LaA103 is reported.SrRuO3 thin films on (001) LaA1O3 were deposited by 90° off-axis sputtering. For cross-section TEM studies the SrRuO3/LaA1O3 heterostructural samples were cut along the [100] direction of LaA103. The cut slides were glued face-to-face by joining the SrRu03 surfaces. Plan-view and cross-section TEM specimens were prepared by mechanical grinding, polishing and dimpling, followed by Ar-ion milling.

scholarly journals Detection of crystalline phase in cross-section multilayer thin film by High-Resolution Transmission Electron Microscopy

1989 ◽  
Vol 47 ◽  
pp. 680-681
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
Crystalline Phase ◽  
Glass Slide ◽  
Ion Milling ◽  
Si Substrate ◽  
Plan View ◽  
Transmission Electron

High-resolution transmission electron microscopy has proven to be very useful in direct detection of crystalline phases that exist over extremely small volumes, yielding information about structure, orientation, and, under appropriate circumstances, composition. In this paper, we report the detection of a crystalline phase in the tungsten-rich layer of an annealed 7 nm-period tungsten-carbon multilayer produced at the Center for X-Ray Optics at the Lawrence Berkeley Laboratory.The multilayers were prepared by dc magnetron sputtering at floating temperature. The argon sputter gas pressure was 0.0020 torr. Different techniques were employed to produce cross-section and plan-view samples for TEM. For cross-section samples, 70 bilayers of W and C were sputtered on semiconductor-grade Si (111) wafers. For plan-view samples, the substrates on which the multilayer was grown consisted of 3 mm-diameter 300-mesh copper microscope grids, mounted on glass slide with Crystalbond® vacuum adhesive. After a deposition of 4 bilayers of W-C, keeping the same sputtering parameters as those of the Si substrates to guarantee the same layer thicknesses, the glass slide was soaked in acetone to disolve the Crystalbond®, leaving the multilayer spanning the holes of the copper grids. Both the Si-substrate and copper-grid samples were annealed at 500°C for 4 hours under vacuum of 10−6 torr. The annealed Si-substrate sample was then prepared for cross-section by mechanical grinding, and ion milling in a cold stage at 5kV. The cross-section sample was studied in a JEOL JEM 200CX with ultrahigh resolution goniometer, with the eletron beam parallel to the [112] of the Si substrate. The plan-view sample was studied in a Philips 301 operating at 100kV.

Preparation of Cross-Sectional TEM Samples of Fe-Zn Couples

1991 ◽  
Vol 254 ◽  
Author(s):  
L. A. Giannuzzi ◽  
P. R. Howell ◽  
H. W. Pickering ◽  
W. R. Bidter
Keyword(s):  
Electron Microscope ◽  
Liquid Nitrogen ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Preparation Technique ◽  
Ion Milling ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Cold Stage ◽  
Transmission Electron

AbstractA preparation technique for the production of cross-sectional transmission electron microscope (TEM) samples from the interdiffusion regions of Fe-Zn binary couples is described. To alleviate the problem of unequal ion milling rates between the Fe and Zn, a 0.75mm thick Fe sheet has been double plated with a thick electrodeposited Zn coating to achieve a total couple thickness of ˜3mm. After slicing the couple in cross-section, the Fe region of the sample is dimpled to perforation near the Fe-Zn interface. Final thinning for TEM analysis is obtained by ion milling using a liquid nitrogen cold stage and sector speed control. The ion milling procedure is stopped when the perforated hole in the Fe-side of the couple extends through the faster eroding Zn-side of the interface. This technique, in modified form, is expected to be suitable for commercial steels coated with Zn-based alloys.

scholarly journals Having Your Cake and Eating It Too: A Procedure for Obtaining Plan View and Cross Section TEM Images from the Same Site

2005 ◽  
Vol 13 (1) ◽  
pp. 26-29 ◽  
Author(s):  
R.B. Irwin ◽  
A. Anciso ◽  
P.J. Jones ◽  
C. Patton
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Bulk Material ◽  
Ion Beam ◽  
Preparation Technique ◽  
Ion Milling ◽  
Plan View ◽  
Transmission Electron ◽  
Final Sample

Sample preparation for Transmission Electron Microscopy (TEM) is usually performed such that the final sample orientation is either a cross section or a plan view of the bulk material, as shown schematically in Figure 1. The object of any sample preparation technique, for either of these two orientations, is to thin a selected volume of the sample from its initial bulk state to electron transparency, ~ 100nm thick. In doing so, the final sample must be mechanically stable, vacuum compatible, and, most of all, unchanged from the initial bulk material. Many techniques have been used to achieve this goal: cleaving, sawing, mechanical polishing, chemical etching, ion milling, focused ion beam (FIB) milling, and many others.

scholarly journals Evaluation of Precipitates Type in Brasses as a Function of Charge Material

2016 ◽  
Vol 16 (3) ◽  
pp. 19-24
Author(s):  
A.W. Bydałek ◽  
K. Najman ◽  
A. Kula ◽  
S. Biernat ◽  
L. Błaż ◽  
...  
Keyword(s):  
Cast Alloy ◽  
Charge Material ◽  
Sem Analysis ◽  
Tem Analysis ◽  
Sem And Tem ◽  
Phase Type ◽  
Phosphorus Iron ◽  
Trial Series ◽  
Iron Chromium

Abstract Trial series of cast alloy MO59 obtained from qualified scrap was investigated. SEM and TEM of resulting precipitates were conducted. The SEM analysis demonstrated the dependence of silicon, phosphorus, iron, chromium and nickel in the composition of the so-called hard precipitates. TEM analysis showed the formation of phase AlFeSi and AlCr. Made studies have shown the important role of the composition of the batch melts brass CuZn39Pb2 type. The analysis of SEM and TEM resulting precipitates pointed to the formation of various forms of divisions, only one of which was described in the literature character of the so-called hard inclusions. The SEM studies demonstrated the dependence of the occurrence of inclusions rich in silicon, phosphorus, iron, chromium and nickel. In contrast, additional TEM analysis indicated the formation of AlFeSi phase type and AlCr. The results of the analyses referred to the structure of the batch. Due to the difficulty of obtaining recycled materials that do not contain these elements necessary to carry out further analyzes in the direction of defining the role of phosphorus in the formation of the so-called hard inclusions.

Improved Method of ROI Encapsulation during Axis Conversion of Cross-Sectional S/TEM Lamellae

2016 ◽  
Author(s):  
Corey Senowitz ◽  
Lesly Endrinal ◽  
Hieu Nguyen ◽  
Lavakumar Ranganathan ◽  
Ruby Vollrath ◽  
...  
Keyword(s):  
Cross Section ◽  
Structural Integrity ◽  
Improved Method ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Orthogonal Axis ◽  
Plan View ◽  
Adequate Information ◽  
Alternative Approach ◽  
Defect Localization

Abstract Defect localization has become more complicated in the FinFET era. As with planar devices, it is still generally possible to electrically isolate a failure down to a single transistor. However, the complexity of certain FinFET devices can lead to ambiguity as to the exact physical location of the defect. The default technique for isolating the defect location for this type of device is to start with a plan view S/TEM lamellae. Once the defect is located in plan view, the lamellae can be converted to cross-section (if necessary) for further characterization. However, if the defect is not detectable in plan view S/TEM analysis, an alternative approach is to examine the device in cross-section along either the x- or y- axis. Once the defect is located in the initial cross-sectional lamellae, it can be converted to the orthogonal axis if the initial cross-sectional lamellae did not provide adequate information for characterization. However, in converting a cross-sectional lamellae to the orthogonal axis, the initial lamellae must be exceedingly thin due to the dimensions of devices on 1x nm FinFET technologies, else other structures on the sample can obscure the view in the S/TEM. This can lead to structural integrity (warping) issues for the converted lamellae. In this paper, a novel solution to the warping issue is presented.

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