Analysis of Basal Plane Dislocation Dynamics in PVT-Grown 4H-SiC Crystals during High Temperature Treatment

2019 ◽  
Vol 92 (7) ◽  
pp. 131-139
Author(s):  
Balaji Raghothamachar ◽  
Yu Yang ◽  
Jianqiu Guo ◽  
Michael Dudley
Keyword(s):  
High Temperature ◽  
Basal Plane ◽  
Temperature Treatment ◽  
Dislocation Dynamics ◽  
High Temperature Treatment ◽  
Basal Plane Dislocation

Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment

2019 ◽  
Vol 963 ◽  
pp. 268-271
Author(s):  
Balaji Raghothamachar ◽  
Yu Yang ◽  
Jian Qiu Guo ◽  
Michael Dudley
Keyword(s):  
High Temperature ◽  
Basal Plane ◽  
Dislocation Motion ◽  
Temperature Treatment ◽  
Dislocation Dynamics ◽  
High Temperature Treatment ◽  
Velocity Measurements ◽  
Basal Plane Dislocation ◽  
Induced Motion

Direct observation of thermal gradient induced motion of basal plane dislocations by in-situ synchrotron X-ray topography imaging of PVT-grown 4H-SiC wafers subject to high temperature treatment has provided an opportunity to analyze the movement of dislocations. Dislocations with Burgers vector along the off-cut [11-20] direction were found to be the only dislocations involved in deformation during heat treatment and the segments of dislocations used for velocity measurements were found to be either pure screw comprised of both Si-and C-core partials or 60° dislocations comprised of purely Si cores. Using the kink-diffusion model, the activation energies for dislocation motion have been calculated from the velocity data for each of these dislocation types and found to be 3.28eV for pure screw and 2.21eV for 60° dislocation segments, respectively.

An experimental study on the fracture behaviors of marble specimens subjected to high temperature treatment

2020 ◽  
Vol 225 ◽  
pp. 106862 ◽  
Author(s):  
Qingzhen Guo ◽  
Haijian Su ◽  
Jiawei Liu ◽  
Qian Yin ◽  
Hongwen Jing ◽  
...  
Keyword(s):  
Experimental Study ◽  
High Temperature ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Fracture Behaviors

scholarly journals Systemic Infection by Fusarium verticillioides in Maize Plants Grown Under Three Temperature Regimes

Plant Disease ◽  
2008 ◽  
Vol 92 (12) ◽  
pp. 1695-1700 ◽  
Author(s):  
A. Murillo-Williams ◽  
G. P. Munkvold
Keyword(s):  
High Temperature ◽  
Environmental Factors ◽  
Fusarium Verticillioides ◽  
Systemic Infection ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Kernel Infection ◽  
Temperature Regimes ◽  
Maize Plants ◽  
Systemic Development

Fusarium verticillioides causes seedling decay, stalk rot, ear rot, and mycotoxin contamination (primarily fumonisins) in maize. Systemic infection of maize plants by F. verticillioides can lead to kernel infection, but the frequency of this phenomenon has varied widely among experiments. Variation in the incidence of systemic infection has been attributed to environmental factors. In order to better understand the influence of environment, we investigated the effect of temperature on systemic development of F. verticillioides during vegetative and reproductive stages of plant development. Maize seeds were inoculated with a green fluorescent protein-expressing strain of F. verticillioides, and grown in growth chambers under three different temperature regimes. In the vegetative-stage and reproductive-stage experiments, plants were evaluated at tasseling (VT stage), and at physiological maturity (R6 stage), respectively. Independently of the temperature treatment, F. verticillioides was reisolated from nearly 100% of belowground plant tissues. Frequency of reisolation of the inoculated strain declined acropetally in aboveground internodes at all temperature regimes. At VT, the high-temperature treatment had the highest systemic development of F. verticillioides in aboveground tissues. At R6, incidence of systemic infection was greater at both the high- and low-temperature regimes than at the average-temperature regime. F. verticillioides was isolated from higher internodes in plants at R6, compared to stage VT. The seed-inoculated strain was recovered from kernels of mature plants, although incidence of kernel infection did not differ significantly among treatments. During the vegetative growth stages, temperature had a significant effect on systemic development of F. verticillioides in stalks. At R6, the fungus reached higher internodes in the high-temperature treatment, but temperature did not have an effect on the incidence of kernels (either symptomatic or asymptomatic) or ear peduncles infected with the inoculated strain. These results support the role of high temperatures in promoting systemic infection of maize by F. verticillioides, but plant-to-seed transmission may be limited by other environmental factors that interact with temperature during the reproductive stages.

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