Selective Annealing Effects of Asymmetric Schottky-Type AlGaN Metal-Semiconductor-Metal UV-B Sensor

2019 ◽  
Vol 92 (6) ◽  
pp. 19-23
Author(s):  
Byeong-Jun Park ◽  
Jeong-Hoon Seol ◽  
Sung-Ho Hahm
Keyword(s):  
Metal Semiconductor Metal ◽  
Schottky Type ◽  
Annealing Effects

Post Annealing Effects on the Electrical Properties of Polysilicon Metal-Semiconductor-Metal Photodetectors

2018 ◽  
Vol 28 (4) ◽  
pp. 195-200
Author(s):  
Kyeong-Min Kim ◽  
◽  
Jung-Yeul Kim ◽  
You-Kee Lee ◽  
Yong-Sun Choi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Post Annealing ◽  
Metal Semiconductor Metal ◽  
Annealing Effects

CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal

Experimental and Theoretical Comparable Study of Pure and Zinc Porphyrin Surface Modified ZnO Nanorod Arrays for Hybrid Solar Cell Applications

2020 ◽  
pp. 114-119
Keyword(s):  
Solar Cell ◽  
Electrochemical Impedance ◽  
Hybrid Solar Cell ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Annealing Effects ◽  
Vertically Aligned ◽  
Surface Modified

Experimental and theoretical study Porphyrin-grafted ZnO nanowire arrays were investigated for organic/inorganic hybrid solar cell applications. Two types of porphyrin – Tetra (4-carboxyphenyle) TCPP and meso-Tetraphenylporphine (Zinc-TPP)were used to modify the nanowire surfaces. The vertically aligned nanowires with porphyrin modifications were embedded in graphene-enriched poly (3-hexylthiophene) [G-P3HT] for p-n junction nanowire solar cells. Surface grafting of ZnO nanowires was found to improve the solar cell efficiency. There are different effect for the two types of porphyrin as results of Zn existing. Annealing effects on the solar cell performance were investigated by heating the devices up to 225 °C in air. It was found that the cell performance was significantly degraded after annealing. The degradation was attributed to the polymer structural change at high temperature as evidenced by electrochemical impedance spectroscopy measurements.

Solubility Limit and Annealing Effects on the Microstructure & Thermoelectricproperties of Fe 2V 1-XTa xAl 1-YSi y Heusler Compounds

2021 ◽  
Author(s):  
Fabian Garmroudi ◽  
Michael Parzer ◽  
Alexander Riss ◽  
Nikolas Reumann ◽  
Bernhard Hinterleitner ◽  
...  
Keyword(s):  
Solubility Limit ◽  
Heusler Compounds ◽  
Annealing Effects

Ultrahigh-Vacuum Electron Microscopy for Gold Nanostructures

2001 ◽  
Vol 7 (S2) ◽  
pp. 920-921
Author(s):  
Yukihito Kondo ◽  
Kimiharu Okamoto ◽  
Mikio Naruse ◽  
Toshikazu Honda ◽  
Mike Kersker
Keyword(s):  
Electron Microscopy ◽  
Field Emission ◽  
Electronic Devices ◽  
Ultrahigh Vacuum ◽  
Gold Nanostructures ◽  
Scanning Tunneling ◽  
Nano Scale ◽  
Transmission Electron ◽  
Column Type ◽  
Schottky Type

Ultrahigh-vacuum transmission electron microscopy (UHVTEM) has become increasingly popular for the direct observation of nanostructures having clean surfaces, since industrial requirements to make and research nano-scale materials have been rapidly growing for quantum or nanoscale electronic devices. Since we have first developed high resolution UHVTEM in 1986, the UHVTEMs have been evolved with steady advances such as UHV compatible goniometer, field emission gun or etc. Furthermore, the UHVTEM started to combine analytical capabilities such as energy dispersive X-ray spectrometer, in-column type energy filter and etc., and to combine STM (scanning tunneling microscope). The UHV technology is essential for the analysis, because the portion of contaminant in a nano-scale specimen increases as the size of the specimen goes down. This paper reports the results of gold nanostructures by recently the developed UHVTEM.Figure 1 shows recently developed UHVTEM with Schottky type field emission gun.

scholarly journals Synthesis and post-annealing effects of alkaline-metal-ethylenediamine-intercalated superconductors A(C2H8N2) Fe2−Se2 (A= Li, Na) with Tc= 45 K

2014 ◽  
Vol 504 ◽  
pp. 8-11 ◽  
Author(s):  
Takashi Noji ◽  
Takehiro Hatakeda ◽  
Shohei Hosono ◽  
Takayuki Kawamata ◽  
Masatsune Kato ◽  
...  
Keyword(s):  
Alkaline Metal ◽  
Post Annealing ◽  
Annealing Effects

Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs

2021 ◽  
pp. 1-1
Author(s):  
Junting Chen ◽  
Mengyuan Hua ◽  
Chengcai Wang ◽  
Ling Liu ◽  
Lingling Li ◽  
...  
Keyword(s):  
Turn On ◽  
Threshold Voltages ◽  
Reverse Turn ◽  
Schottky Type
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