(Invited) Characteristics of Several High-k Gate Insulators for GaN Power Device

2019 ◽  
Vol 92 (4) ◽  
pp. 109-117 ◽  
Author(s):  
Toshihide Nabatame ◽  
Erika Maeda ◽  
Mari Inoue ◽  
Masafumi Hirose ◽  
Hajime Kiyono ◽  
...  
Keyword(s):  
Power Device ◽  
Gate Insulators ◽  
High K

(Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device

2021 ◽  
Vol MA2021-02 (30) ◽  
pp. 925-925
Author(s):  
Toshihide Nabatame ◽  
Erika Maeda ◽  
Mari Inoue ◽  
Masafumi Hirose ◽  
Ryota Ochi ◽  
...  
Keyword(s):  
Power Device ◽  
Gate Insulators ◽  
High K

(Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device

2021 ◽  
Vol 104 (4) ◽  
pp. 113-120
Author(s):  
Toshihide Nabatame ◽  
Erika Maeda ◽  
Mari Inoue ◽  
Masafumi Hirose ◽  
Ryota Ochi ◽  
...  
Keyword(s):  
Power Device ◽  
Gate Insulators ◽  
High K

Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

2009 ◽  
Vol 94 (4) ◽  
pp. 042901 ◽  
Author(s):  
Yi Zhao ◽  
Koji Kita ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Electrical Properties ◽  
Band Gap ◽  
Gate Insulators ◽  
High K

High-k polymeric gate insulators for organic field-effect transistors

2019 ◽  
Vol 30 (20) ◽  
pp. 202002 ◽  
Author(s):  
Haiyang Yu ◽  
Yihang Chen ◽  
Huanhuan Wei ◽  
Jiangdong Gong ◽  
Wentao Xu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Gate Insulators ◽  
High K

Second Generation High-k Gate Insulators

2006 ◽  
pp. 1342-1350
Author(s):  
M. Li ◽  
Z. Zhang ◽  
D. Yu ◽  
Ivana McCarthy ◽  
Sheron Shamuilia ◽  
...  
Keyword(s):  
Second Generation ◽  
Gate Insulators ◽  
High K

scholarly journals Analytical Model for the SOI Lateral Power Device With Step Width Technique and High-${k}$ Dielectric

2019 ◽  
Vol 66 (7) ◽  
pp. 3055-3059 ◽  
Author(s):  
Jiafei Yao ◽  
Yufeng Guo ◽  
Kemeng Yang ◽  
Lin Du ◽  
Jun Zhang ◽  
...  
Keyword(s):  
Analytical Model ◽  
Power Device ◽  
Step Width ◽  
High K ◽  
High K Dielectric

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

Nanoscale ◽  
2015 ◽  
Vol 7 (19) ◽  
pp. 8695-8700 ◽  
Author(s):  
Changjian Zhou ◽  
Xinsheng Wang ◽  
Salahuddin Raju ◽  
Ziyuan Lin ◽  
Daniel Villaroman ◽  
...  
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Power Device ◽  
Enhancement Mode ◽  
High K ◽  
High K Gate Dielectric

Ultra high-k dielectric enables low-voltage enhancement-mode MoS2 transistor with high ON/OFF ratio, leading to low-power device.

Sign in / Sign up

Export Citation Format

Share Document